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Indium arsenide

Indium arsenide (InAs) is a III-V compound semiconductor with a direct bandgap, making it useful for optoelectronic devices such as infrared detectors and lasers.
It has a high electron mobility and can be used in high-speed electronic applications like field-effect transistors.
InAs is also employed in the fabrication of thermoelectric coolers and quantum dot devices.
Researchers optimizing Indium arsenide research can leverage PubCompare.ai, an AI-driven platform that enhaces reproducibility and accuaracy.
This essential tool helps locate protocols from literature, preprints, and patents, and provides AI-driven comparisons to identify the best protocols and products for Indium arsenide optimization needs.

Most cited protocols related to «Indium arsenide»

1
Real-time Anterior Segment Imaging with Dual SD-OCT
Cited 3 times
The improved system, which operates at 840 nm, was based on our previously reported long scan
depth SD-OCT using a CCD camera [8 (link),21 (link)]. The previous system demonstrated its suitability for imaging the entire
anterior segment of the eye during accommodation [8 (link),21 (link)]. The main benefit found in the improved system was the
implementation of a CMOS camera to increase its scan speed for real-time imaging (Fig. 1

Schematic diagram depicting the combined spectral-domain OCT systems. SLD1310:
superluminescent diode with a central wavelength of 1,310 nm, SLD840: superluminescent
diode with a central wavelength of 840 nm, FC: fiber coupler, PC: polarization controller,
CL1-4: collimating lenses, DC: dispersion compensator, L1-3: objective lenses,
M1-3: refractive mirror, GM: galvanometer mirror, NDF: neutral density filter, LCD:
liquid-crystal display, DG: diffraction grating, CMOS: complementary metal-oxide-semiconductor
transistor camera, InGaAs: indium gallium arsenide. Insert: X-Y alignment.

). Briefly, a superluminescent diode (SLD, InPhenix, IPSDD0808, Livermore, CA, USA) with a
central wavelength of 840 nm and the full-width at half bandwidths of 50 nm was used as the light
source. The power output on the cornea was set to be 1.25 mW which was well below the safe cut-off
value according to American National Standard Institute (ANSI) Z136.1. The spectrometer was composed
of a collimating lens (f = 50 mm, OZ Optics, Ottawa, Canada), an 1800 lines/mm volume holography
transmission grating, an image enlargement lens (Schneider, f = 240 mm, New York, NY), and a line
array CMOS camera (Basler Sprint spL4096-140k; Basler AG, Germany). The acquisition speed of the
camera was up to 70,000 A-lines/s, and the interference spectrum data were transferred using the
image acquisition board (PCIe-1429, National Instruments, USA). The measured scan depth was 12.55
mm; the axial resolution of the system near the zero-delay line was approximately 7.0 μm in
air; and the sensitivity was 99 dB near the zero delay line, with a 51 dB drop at the maximal
imaging depth. The driver was developed in a setup with Labview (National Instrument, Austin, TX)
running on a computer with Windows 7 (64 bit).
The beam from the SLD was split into the sample arm and the reference arm using a 50:50 fiber
coupler. In order to extend the effective image depth, the reference arm was specially designed,
which consisted of two reflective mirrors (usually one reflective mirror in the reference arm). The
two mirrors were mounted on two axial stages, respectively, which could adjust the optical path
difference (OPD), amounting to two reference arms with different OPDs. Moreover, a galvanometer
optical scanner with a silver mirror (GM in Fig. 1) was
implanted in the reference arm, which could rapidly turn the beam between the two mirrors that was
synchronized with the scanning. Thus a set of images that included the two frames was continually
obtained during image acquisition. The difference in the OPD between the two mirrors was set about
11 mm, which was used to place the zero-delay lines of the two images on the top and the bottom of
the anterior segment. Through image overlapping, the sensitivity drop was compensated, and the image
enhancement was realized as described in our previous work [8 (link),21 (link)]. This device (anterior segment OCT, AS-OCT) was
used to image the entire anterior segment from the cornea to the crystalline lens through the
pupil.
Another SD-OCT (CM-OCT) was used to image the ciliary muscle for acceptable penetration (Fig. 1). The spectrometer was custom-developed (Bioptigen, Durham,
NC), and this device has been described elsewhere for imaging the anterior segment [23 (link),24 (link)]. The light source was
an SLD centered at a wavelength of 1,310 nm with a full-width at half maximum bandwidths of 75 nm.
The output on the eye was set to 2.6 mW which was well below the ANSI safety limit for maximum
permissible exposure of 15.4 mW at the wavelength [25 ]. In
addition, most of the 1310 nm beam did not reach the retina because the iris blocked the light and
the beam was directed to the limbal area. The scan depth was 3.8 mm with an axial resolution of ~8.0
μm in air. An indium gallium arsenide (InGaAs) camera (SU1024, Goodrich Sensors Unlimited
Inc, Princeton, NJ) was used, and the system could image at 7 frames per second with an acquisition
speed of 7,000 A-lines/s, corresponding to a frame of 1,000 A-lines. In real-time imaging, the
images were continually acquired, processed and displayed. An electronic shutter (JML Optical,
Rochester, NY) was implanted in the reference arm and used to insert a sync signal into OCT image
acquisition during real-time imaging. The system ran with a proprietary program for data
acquisition.
Shao Y., Tao A., Jiang H., Shen M., Zhong J., Lu F, & Wang J. (2013). Simultaneous real-time imaging of the ocular anterior segment including the ciliary muscle during accommodation. Biomedical Optics Express, 4(3), 466-480.
Publication 2013
2
Scalable Synthesis of InAs-CdSe Core-Shell QDs
Cited 3 times
For CSS QD synthesis InAs QDs were synthesized using (TMGe)3As or (TMSi)3As as a precursor and purified as described above. The diameter and the concentration of the synthesized particles in solution was determined by using a sizing curve46 (link). Based on QD size a rough estimate of shell precursor material that is necessary to grow a certain amount of shell monolayers was calculated5 (link). However, as InAs QDs do not exhibit a perfectly spherical shape the actual amount of deposited shell material per shell monolayer was found to slightly vary from the calculated values. The shell growth process was monitored by taking frequent aliquots throughout the growth process to determine absorption and fluorescence spectra, as well as QY values such that the final emission peak could be tuned to the desired wavelength. In a typical reaction, purified InAs QDs (96 nmoles, diameter of 4.7 nm, PL emission at 1,039 nm) in hexanes were transferred to a mixture of octadecene (3 ml) and oleylamine (3 ml) in a four neck flask. The mixture of octadecene and oleylamine was previously degassed at 115 °C for at least 1 h. The solution was switched to vacuum to remove the hexanes for 30 min at room temperature and another 10 min at 110 °C. Subsequently, the solution was heated to 280 °C for the shell growth. As soon as the mixture reached 240 °C, shell precursor injection was started using 0.05 M shell precursor solutions in octadecene. Cd(Ol)2 (111 μmoles) and TOPSe (111 μmoles) were added over the course of 67 min (injection speed 2 ml h−1). InAsCdSe CS QDs were purified using the above described procedure (however using acetone and methanol as non-solvents) and stored in hexanes. In contrast to bare InAs cores, the InAs core-shell QDs were not transferred to a glovebox but stored in air. The size was measured to be 5.1 nm (TEM) and the QDs exhibited a PL peak at 1,296 nm. The resulting InAsCdSe (roughly 86 nmoles, 10% loss through aliquots and purification) were redispersed in octadecene (3 ml) and oleylamine (3 ml), and degassed at room temperature for 30 min and at 100 °C for 10 min. To that solution 3 ml of a 0.05 M Cd(Ol)2 and 3 ml of a 0.045 M sulfur solution in octadecene were added (150 μmoles Cd and 135 μmoles S) at 240 °C within 1 h. The final QD diameter was determined to be 6.9 nm (TEM) with a PL emission at 1,307 nm.
Franke D., Harris D.K., Chen O., Bruns O.T., Carr J.A., Wilson M.W, & Bawendi M.G. (2016). Continuous injection synthesis of indium arsenide quantum dots emissive in the short-wavelength infrared. Nature Communications, 7, 12749.
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Publication 2016
Acetone Anabolism Fluorescence Hexanes indium arsenide Methanol Neck oleylamine Solvents Sulfur Vacuum
3
Synthesis and Surface Modification of InAs Colloidal Quantum Dots
Cited 2 times
Indium acetate (InOAc, 99.99%), oleic acid (OA, ≥ 99%), dioctylamine (DOA, ≥ 97%), 1-octadecene (ODE, 90%), nitrosyl tetrafluoroborate (NOBF4, 95%), 3-mercaptopropionic acid (MPA, ≥ 99%), 1,2-ethanedithiol (EDT, ≥ 98%), ammonium iodide (NH4I, ≥ 99%), ammonium chloride (NH4Cl, 99.99%), and ammonium bromide (NH4Br, ≥ 99%) are purchased from Sigma-Aldrich Chemical Co. and used without further purification. Trimethylsilylarsine ((TMSi)3As, 99%) is purchased from JSI Silicone and is distilled before use. All solvents, including hexane, butanol, anhydrous n,n-dimethylformamide (DMF), formamide (FA), anhydrous octane, toluene, and tetrachloroethylene (TCE) are purchased from Sigma-Aldrich Chemical Co.
Colloidal InAs CQD via continuous injection synthesis: Indium arsenide quantum dots (InAs CQDs) have been prepared following those that have been described earlier with some modification16 (link). Typically, CQDs have been synthesized by using continuous injection of cluster solution into the seed solutions, and the details are as follows:

Synthesis of InAs seeds. The InOAc solution: In total, 0.29 g (1 mmol) of InOAc is mixed with 0.85 g (3 mmol) of oleic acid in 5 mL of ODE in a 50-mL round-bottom flask degassed at 120 °C for 2 h under vacuum. The As solution: In total, 0.14 g (0.5 mmol) of (TMSi)3As is mixed with 0.36 g (1.5 mmol) of DOA dissolved in 1 mL of degassed ODE solution, and the solution is kept at 60 °C for 1 h until the no-color transparent solution turns to brown, in a glove box. The As solution is rapidly injected into InOAc solution at 300 °C. The temperature is dropped to 287 °C and continued for 20 min.

Synthesis of amorphous InAs nanoclusters. The InOAc solution: In total, 1.74 g (6 mmol) of InOAc is mixed with 5.10 g (18 mmol) of oleic acid in 30 mL of ODE in a 50-mL round-bottom flask degassed at 120 °C for 2 h under vacuum. The As solution: In total, 0.84 g (3 mmol) of (TMSi)3As is mixed with 2.17 g (9 mmol) of DOA dissolved in 6 mL of degassed ODE solution, and the solution is kept at 60 °C for 1 h, in a glove box. The As solution is injected into InAc solution at room temperature with constant stirring for 10 min.

Synthesis of InAs quantum dots. InAs nanoclusters solution prepared has been loaded in a syringe (diameter 20 mm) and injected into InAs CQD seed solution at growth temperature (300 °C) at desired rates (0.05 mmol indium/min, arsenic equivalent). Final sizes are depending on the injection rate, amount of precursor added, and also InAs seeds (size and size distribution).

Purification. Synthesized InAs CQD solution is divided into smaller volume fractions of 10 mL each. To each fraction, 40 mL of butanol is added and centrifuged at 6000×g rpm for 5 min. The precipitate is dispersed in 10 mL of hexane, and subsequently, 15 mL of butanol is added and centrifuged at 4000×g for 5 min. The precipitate is left out and the supernatant is collected in fresh tube, and 20 mL of butanol was added and centrifuged at 6000×g for 5 min. This step effectively removes any by-product (In2O3) formed. The precipitate is dispersed in 10 mL of hexane. An aliquot of 35 mL of butanol is added and centrifuged at 6000×g for 5 min and this step is repeated two times more. Finally, the precipitate is dried under vacuum for overnight before it disperses in octane for further steps.

Step 1: preparation of naked InAs CQDs–solution treatment with NOBF4: Typically, a total of 200 mg of InAs CQDs are dispersed in 4 mL of octane followed by the addition of a 10-mL solution of NOBF4 (0.02 M in DMF). CQDs completely transfer to DMF phase within 2 min. The colorless octane phase is discarded followed by the addition of pure hexane to wash out any remaining nonpolar organics. This step is repeated two times more; subsequently, pure toluene was added to precipitate the CQDs in DMF phase and centrifuged at 6k rpm for 4 min. The precipitate is re-dispersed in 5 mL of DMF. Fifteen milliliters of toluene is added and centrifuged at 6000×g rpm for 4 min. The final product is dried in vacuum for overnight before being dispersed in DMF for further use.
Step 2: surface reconstruction in InAs CQD: For halide ligand reconstruction, the halide salts such as ammonium chloride (NH4Cl), ammonium bromide (NH4Br), or ammonium iodide (NH4I) are purchased from Sigma-Aldrich and used as received without further purification. The following stock solution: 0.01% halide salts in anhydrous MeOH are tested in this work. In brief, 10 mL of naked InAs CQD (10 mg mL−1) in DMF is mixed with 5 mL of halide salts in MeOH. After stirring for less than 3 min, we obtain a stable CQD solution in mixture solvent. Toluene is employed to precipitate the CQD, which is followed by centrifugation at 6000×g rpm for 4 min. The final product is dried in vacuum for 2 h before being recovered in DMF without affecting the colloidal stability.
For thiol ligand reconstruction, 0.01 vol% of MPA in anhydrous DMF is prepared. In brief, 10 mL of naked InAs CQD (10 mg mL−1) in DMF is mixed with 5 mL of MPA solvent. After stirring for less than 3 min, toluene is used to precipitate the CQD, which is followed by centrifugation at 6000×g rpm for 4 min. The final product is dried in vacuum for 2 h before being recovered in DMF without affecting colloidal stability. In the case of 1,2-ethanedithiol (EDT), 0.01% of EDT in DMF is prepared. In brief, 20 mL of naked InAs CQDs (5 mg mL−1) in DMF are mixed with 5 mL of EDT solvent. After stirring for less than 10 min, toluene is added to precipitate the CQD, which is followed by centrifugation at 6000×g rpm for 4 min. The final product is dried in vacuum for 2 h before being recovered in FA. EDT-capped InAs CQD is stable in FA for 1 h, which follows the robust aggregation.
Song J.H., Choi H., Pham H.T, & Jeong S. (2018). Energy level tuned indium arsenide colloidal quantum dot films for efficient photovoltaics. Nature Communications, 9, 4267.
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Publication 2018
4
Near-Infrared Imaging for Occlusal Lesion Detection
Cited 2 times
An imaging probe was employed to acquire images from the occlusal surface. It consisted of a 25-mm objective lens, a ½ inch in diameter tube 5” long with a relay lens, a mirror and light delivery optics. A high sensitivity InGaAs (Indium gallium arsenide) imaging camera, Model SU320KTSX (Sensors Unlimited, Princeton, NJ) was used to collect all the images. For comfort and stability, the video camera/handpiece assembly was mounted onto the examiner’s forearm as shown in Fig. 3 and the probes were held by the ½ tube of the probe. Since lesions are detected by differences in optical contrast uniform illumination is critical for NIR imaging. The probe shown in Fig. 3 is placed directly over the tooth and optical fibers coupled to Teflon optical diffusers in two arms directed the NIR light to just above the gingival tissues on the facial and lingual side of the tooth and the mirror directed the light to the imager. The system provided uniform illumination of the crown and the sound enamel was visible as a ring of higher intensity around the central dentin core of the tooth. Occlusal lesions were visible as dark areas in the occlusal pits and fissures. Light was provided by two 1310-nm superluminescent diodes (SLD) from (Optospeed, Zurich, Switzerland), with an output power of 15 mW and a 35-nm bandwidth. The power was determined empirically by experimenting with various settings and the bandwidth was chosen because the use of broadband SLD’s reduces speckle noise and the related image degradation that is common with narrow bandwidth light sources. If it was necessary to remove bubbles on the teeth to be examined, they were gently dried with a stream of air from a dental unit air syringe and video (8-bit) was acquired as the imaging handpiece was passed over the tooth.
Staninec M., Douglas S.M., Darling C.L., Chan K., Kang H., Lee R.C, & Fried D. (2011). Nondestructive Clinical Assessment of Occlusal Caries Lesions using Near-IR Imaging Methods. Lasers in surgery and medicine, 43(10), 951-959.
Publication 2011
ARID1A protein, human Arm, Upper Dental Enamel Dental Health Services Dentin Eye Face Forearm Gallium gallium arsenide Gingiva Hypersensitivity Indium indium arsenide Lens, Crystalline Light Obstetric Delivery Sound Syringes Teflon Tissues Tongue Tooth Van der Woude syndrome
5
Optimizing LLLT for Improved Cell Metabolism
Cited 2 times
The LLLT device used in this study was a near infrared indium gallium arsenide phosphide (InGaAsP) diode laser prototype (LASERTable; 780 ± 3 nm wavelength, 0.04 W maximum power output), which was specifically designed to provide a uniform irradiation of each well (2 cm²) in which cultured cells are seeded [8 , 9 ]. The power loss through the acrylic plate was calculated using a potentiometer (Coherent LM-2 VIS High-Sensitivity Optical Sensor, USA), which was placed inside the culture plate. After this measure, the power loss of the plate was determined as 5%. After that, the power of all diodes was checked and standardized. Therefore, a final power of 0.025 W reached the cultured cells. This standardization was performed as previously described in the literature [8 , 9 ]. For the evaluation of cell metabolism, the radiation originated from the LASERTable was delivered on the base of each 24-well plate with energy doses of 0.5, 1.5, 3, 5, and 7 J/cm², and irradiation times of 40, 120, 240, 400, and 560 s, respectively. The laser light reached the cells on the bottom of each well with a final power of 0.025 W because of the loss of optical power in each well due to the interposition of the acrylic plate. The cells were irradiated every 24 h totalizing 3 applications during 3 consecutive days. The cells assigned to control groups received the same treatment as that of the experimental groups. The 24-well plates containing the control cells were maintained at the LASERTable for the same irradiation times used in the respective irradiated groups, though without activating the laser source (sham irradiation) [8 , 9 ]. Twenty-four hours after the last irradiation (active or sham), the metabolic activity of the cells was evaluated using the MTT assay (described below). Based on cell metabolism results, the two most effective irradiation doses were selected to evaluate the cell number (trypan blue assay), cell migration capacity by using the wound healing assay (qualitative analysis) and the transwell migration assay (quantitative analysis), as described below.
Basso F.G., Pansani T.N., Turrioni A.P., Bagnato V.S., Hebling J, & de Souza Costa C.A. (2012). In Vitro Wound Healing Improvement by Low-Level Laser Therapy Application in Cultured Gingival Fibroblasts. International Journal of Dentistry, 2012, 719452.
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Publication 2012
Biological Assay Cell Migration Assays Cells Cultured Cells Electromagnetic Radiation Gallium Arsenide Lasers Hypersensitivity Indium Laser Therapy, Low-Level Light Low Vision Medical Devices Metabolism Migration, Cell Radiotherapy Therapies, Investigational Trypan Blue

Most recents protocols related to «Indium arsenide»

1
Near-Infrared Spectroscopic Analysis
The NIR spectra of the samples were collected in diffuse reflectance mode using a Fourier-transform near-infrared spectrometer (FTLA 2000, ABB, Dorval, QC, Canada). The spectrometer was equipped with an indium–gallium–arsenide (InGaAs) detector and operated under the control of Bomen–Grams software (version 7, ABB, Dorval, QC, Canada). Each spectrum was derived as the mean of 64 scans, covering the range from 10,000 to 4000 cm−1 and obtained with a resolution of 8 cm−1. Every sample underwent triplicate analysis, and only the resulting average was utilised for subsequent model analysis. The background was created using a Teflon reference material.
Páscoa R.N., Pinto C., Rego L., Silva J.R., Tiritan M.E., Cidade H, & Almeida I.F. (2024). Application of NIR Spectroscopy for the Valorisation of Cork By-Products: A Feasibility Study over the Screening and Discrimination of Chemical Compounds of Interest. Pharmaceuticals, 17(2), 180.
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Publication 2024
2
Raman Spectroscopy Analysis of Liposome Samples
Raman spectral data were collected using a Nicolet NXR 9650 FT-Raman spectrometer (Thermo Scientific, USA), which includes a MicroStage extension, a neodymium-doped yttrium orthovanadate (Nd: YVO4) laser operating at 1064 nm with a power of 100 mW for excitation, and an indium gallium arsenide (InGaAs) detector for signal detection. Each analysis involved placing a 10 μL drop of the sample liposome suspension onto a gold substrate, which was then allowed to dry via exposure to the laser. The FT-Raman spectra captured a frequency range from 3700 to 0 cm−1, achieving a resolution of 4 cm−1 by averaging over 1024 scans (Fig. S7). The study maintained a consistent concentration of the compounds at 50 μM and lipids at 0.1 mg/ml to optimize the signal-to-noise ratio. Spectral acquisition was performed immediately following the dissolution of samples. Spectral processing and analysis were conducted using OriginPro 2021 software (Origin Lab Corporation, Northampton, Massachusetts, United States), with procedures including baseline adjustment, Savitzky-Golay (SG) smoothing with a window of 35 points and a polynomial order of 2, and normalization of spectra within the [0–1] range for the specific band region under investigation.
Dudek A., Szulc N., Pawlak A., Strugała-Danak P., Krawczyk-Łebek A., Perz M., Kostrzewa-Susłow E, & Pruchnik H. (2024). Structural investigation of interactions between halogenated flavonoids and the lipid membrane along with their role as cytotoxic agents. Scientific Reports, 14, 10561.
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Publication 2024
3
Tunable Terahertz Photomixer Emitters
In common CW terahertz photomixer emitters, two wavelength-tunable single-mode lasers with frequencies ν1 and ν2 are superimposed, resulting in a fast carrier frequency and a slow beat or difference frequency ( νdiff=|ν1-ν2| ). The combined laser signal is focused onto a suitable semiconductor structure inducing an alternating photocurrent at the difference frequency of the lasers. Integrated planar antenna structures are used to radiate the generated electric field into free space. Tuning of the difference-frequency νdiff of the lasers translates directly into the tunability of the terahertz radiation of these sources. The wavelengths of the laser excitation determines appropriate material systems with respect to band-gap properties of the semiconductor. For instance, photomixers based on Indium Gallium Arsenide (InGaAs) are commonly used with 1550 nm laser systems, while Gallium Arsenide (GaAs) based transmitters usually work with 850 nm radiation. Especially the use of 1550 nm optical lasers allows to benefit from the maturity of technological components for this wavelength. Components, which were originally developed for fiber-optical communication, can find their use in 1550 nm terahertz CW systems, which results in overall compactness, reliability, and cost efficiency18 (link),20 (link). The so called PiN photodiode (PiN-PD) is one of the commonly used types of CW emitters for the 1550 nm excitation wavelength. The structure of a PiN-PD is composed of an intrinsic absorption layer sandwiched between n-type and a p-type semiconducting layers. Photocarriers are exited in the intrinsic layer by laser illumination and accelerated by the intrinsic electrical field and an additional external bias field forming an alternating photocurrent, which can be irradiated by an appropriate antenna structure. For our experiments, we use an InGaAs waveguide-integrated PiN-PD (WiN-PD) as photomixer source for the generation of terahertz radiation, similar to the one in29 (link),30 (link). The transmitter is driven by two tunable 1550 nm semiconductor lasers.
Kocybik M., Bauer M, & Friederich F. (2024). Parasitic mixing in photomixers as continuous wave terahertz sources. Scientific Reports, 14, 5534.
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Publication 2024
4
Magnetopriming of Soybean Seeds
Not available on PMC !
To pre-treat the seeds with a static magnetic field (SMF), we used an electromagnet (AETec), fabricated by the Academy of Embedded Technology in Delhi, India. The pole components measured 16 cm in length and 9 cm in diameter while the coil consisted of 3000 turns and a resistance of 16 Ohms. Nearly 100 dry seeds of soybean at a time were placed in a cylindrical sample holder made of thin transparent plastic between the two poles of the electromagnet for magnetopriming, while maintaining the temperature at 25 ± 1 °C. The distance between the two poles was 5cm. The SMF was developed using a direct current (DC) power supply (80 V/10 A) with a continuously changing output. Based on previous studies, soybean seeds were treated with 200 mT of SMF for an hour (Kataria et al. 2020 (link)). The SMF strength was obtained by adjusting the current and voltage by power supply and the obtained SMF strength was measured using a digital gauss meter (AETech model DGM-102) with a probe consisting of an indium arsenide crystal encapsulated by a 5×4×1 mm non-magnetic sheet. The local geomagnetic field was less than 10 mT in the north to south direction. With the exception of the SMF treatment (200 mT for 1 hour) for primed seeds, all other conditions were the same for unprimed and magnetoprimed seeds. Every experiment was carried out concurrently with unprimed seeds (which were used as controls) stored at room temperature (25 ± 1 °C) and kept away from the magnetic field (less than 5 mT).
Vyas A.V., Kataria S., Prajapati R., & Jain M. (2024). Mitigation of cadmium toxicity stress by magnetopriming during germination of soybean. Acta Botanica Croatica, 83(2).
Publication 2024
5
Diode Laser-Assisted Frenectomy with Hyaluronic Acid
This study was a prospective, examiner-blind, randomized, and controlled clinical trial. The local ethics committee approved the study protocol (Approval 2019/220). The clinical phases of the study were performed at the Department of the Periodontology Clinic between August 2019 and May 2021. The conducted research followed the ethical principles outlined in the Declaration of Helsinki. G-Power (version 3.1; Informer Tech Inc., Germany) was used to determine the number of research participants [19 (link)]. It was determined that each group must have a minimum of 16 individuals to achieve 95% power at a 5% significance level. To accommodate potential dropouts and non-compliance, 96 participants were recruited. The randomization sequence was generated using an online computer-based tool (www.random.org). The allocation of participants was independently conducted by individuals designated as OD, ensuring the concealment of allocation. Ninety-six pediatric patients (females, 50 and males, 46) aged 8–14 years were randomly divided into four groups: (1) conventional labial frenectomy with 0.6% topically administered HA (CFH, n = 24); (2) conventional labial frenectomy with placebo gel (CFP, n = 24); (3) labial frenectomy performed by diode laser with 0.6% topically administered HA (DLH, n = 24); and (4) labial frenectomy performed by diode laser with placebo gel (n = 24; Fig. 1).

CONSORT diagram of the flow chart

Systemically healthy and non-medicated individuals (for at least 6 months) with gingival (n = 31; 32.29%), papillary (n = 39; 40.62%), and papillary penetrating (n = 26; 27.08%) labial frenulum attachments were included in the study. The parents signed a written informed consent form for their children’s participation in this study, and the children were given a brief description of the process. The study included frenectomy treatments performed by researchers SSAD and CA. The researchers performed frenectomy treatments on the children without knowing which group they belonged to (placebo or HA). Another researcher, other than the surgeon, performed control and postoperative measurements for each patient.
All the patients underwent dental treatment and initial periodontal therapy and followed the oral hygiene instructions. Before the labial frenectomy procedure, 10% lidocaine was topically applied to all the patients to reduce the pain before administering local anesthesia (Avixa İlaç San. Tic Ltd. Şti., Başakşehir, İstanbul, Turkey). Local infiltration anesthesia with 4% articaine, including epinephrine (epinephrine:articaine, 1:100,000), was applied to the vestibular oral mucosa and right and left regions of the frenulum (Ultracaine D-S Fort Ampul, Avixa İlaç San. Başakşehir, İstanbul, Turkey). The usage protocol for the diode laser was initiated after a waiting time of around 10 min.
The diode laser used in this study was the BIOLASE Epic10™ (BIOLASE INC., CA, USA). The laser interface was set to the “Frenectomy” mode. The features of the frenectomy mode are shown in Table 1. Frenectomy was performed using a 940-nm indium gallium arsenide phosphide (InGaAsP) semiconductor diode laser. The laser was operated in pulseCP2 wave mode at a power of 1.0 watt (W), and a 400-μm diameter optical fiber tip was used (Fig. 2). After the patient and operator wore protective glasses, the environmental safety measures were taken before carrying out the frenectomy procedure following the guidelines in Table 2.

The frenectomy procedure stages utilizing the diode laser. a The Epic 10 diode laser. b Surgical procedure of the diode laser assisted-frenectomy. c The application of 0.6% HA gel as a demonstration for parents

Parameters for the 940-nm diode laser

BIOLASE Epic 10™ diode soft tissue laser
Intrinsic parameters
Laser classificationIV
MediumInGaAs semiconductor diode
Wavelength940 ± 10 nm
Max power output10 W
Power accuracy± 20%
Power modesContinuous, pulse modulation
Delivery systemThe flexible optic fiber
Energy distributionQuasi-flattop
Energy deliveryNon-initiated
Fiber tips diameter200, 300, and 400 μm
Pulse duration0.01–20 ms
Pulse interval0.04–20 ms
Pulse repetition rateUp to 20 kHz
Spot size (for surgical handpiece)400 μm (maximum in contact mode)
Nominal ocular hazard distance2.71 m
Maximum permissible exposure30 W/m2
Beam divergence7–22° per side angle
Aiming beamMax. 1 mW, 625–670 nm, class 2
Standard fiber cable length5 feet (1.5 m)
Adjustable parameters
Frenectomy operating modePulse mode
Used power1.0 W
Irradiation modeThe activation occurs once the pedal is pressed and the targeted tissue is contacted.
Used optic fiber tip diameter400 μm/7
Pulse duration1 ms
Pulse interval1 ms
Peak power2.0 W
Average power1.0 W
Beam divergence8° per side
Speed of movement2 mm/sec
Calculated parameters
Total energy60 J
Power density⁓ 796 W/cm2
Average power density100 W/cm2
Peak power density200 W/cm2
Spot area at tissue0.00126 cm2
Spot diameter at tissue⁓ 0.04 cm
Tip area0.005024 cm2
% on time50%
Energy density⁓ 1500 J/cm2
Using brushing movements, the laser was applied to the upper and lower parts of the frenulum near the hemostat. Moreover, the remaining muscular attachments of the periosteum were removed to eliminate the periosteal adhesion. The remaining ablated tissue was cleared using a moistened gauze with a sterile saline solution [2 (link), 13 (link)]. The average time taken for the procedure with the diode laser was 60 s. After the surgical procedure, the participants were instructed on how to apply the HA gel. The patients in the 0.6% HA group were given seven blister disposable packages containing 0.6% HA (Aftamed Shield Gel, Aktident, Üsküdar, İstanbul, TURKEY). The participants in the HA group were instructed to apply HA Gel to the wound area thrice a day for 1 min after opening a new blister pack and refrain from eating or drinking for 10–15 min [4 (link)] (Fig. 2).
In conventional techniques, the upper lip is extended, and a straight hemostat is attached to the frenulum into the depth of the vestibular fold. Triangular-shaped incisions were made above and below the hemostat using a no. 15 scalpel (HM0240, Beybi, Ümraniye, İstanbul, Turkey) until the labial frenulum was released from the soft tissue. Muscle fiber dissection was performed on the submucosa of the lateral walls after excision of the frenulum with curved forceps to detach them from the periosteum. A 4/0 silk suture was used for primary wound closure (DOGSAN, Beşiktaş, İstanbul, Turkey). After surgical frenectomy was performed, the patients and their parents were advised to be cautious and avoid the exposure to mechanical trauma, flossing, and chewing movements. Gentle tooth brushing was permitted using a surgical toothbrush (Surgical Mega Soft, Curaprox, Kriens, Switzerland). The interrupted sutures were removed 1 week after surgery [1 (link), 2 (link), 13 (link)] (Fig. 3).

The application of 0.6% HA gel as a demonstration for parents after carrying out the classic frenectomy procedure

The Silness–Löe plaque index (PI), gingival index (GI), pocket depth (PD), bleeding on probing (BOP), keratinized gingival width (KGW), attached gingival width (AGW), and attached gingival thickness (AGT) were measured using a Williams periodontal sond (122-006, HuFriedy, Chic, IL, USA). They were recorded prior to the labial frenectomy operations and at 1 and 3 months after the operations [2 (link), 13 (link)].
The VAS was used to evaluate the pain and discomfort levels of the patients, with scores between 0 and 10, where the score of “0” indicated no pain and discomfort and the score of “10” indicated severe pain and discomfort. The participants were requested to complete the questionnaire once daily for 1 week following the operation [2 (link), 4 (link), 13 (link), 20 (link)].
Statistical analyses were performed using SPSS for Windows software package (version 20.0). For descriptive statistics, the mean ± standard deviation and median (minimum–maximum) were used for the quantitative variables, while the number of patients (percentage) was used for the qualitative variables. To determine whether there was a difference between the two categories of the qualitative and quantitative variables, Mann-Whitney U test was used as the normal distribution hypothesis was not provided. Repeated-measures analysis of variance (ANOVA) and two-way repeated-measures analysis of variance were used to examine the change in variables with repeated measures over time and between groups. A significance level of 0.05 was set for statistical analyses.
Doğan S.S., Karakan N.C, & Doğan Ö. (2024). Effects of topically administered 0.6% hyaluronic acid on the healing of labial frenectomy in conventional and 940-nm indium gallium arsenide phosphide (InGaAsP) diode laser techniques in pediatric patients: a randomized, placebo-controlled clinical study. Lasers in Medical Science, 39(1), 48.
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Publication 2024

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More about "Indium arsenide"

Indium Arsenide (InAs) is a crucial III-V compound semiconductor with a direct bandgap, making it highly valuable for optoelectronic applications.
This semiconductor material is widely used in infrared detectors, lasers, and high-speed electronic devices like field-effect transistors (FETs) due to its exceptional electron mobility.
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In addition to its optoelectronic applications, Indium Arsenide is also employed in the fabrication of thermoelectric coolers and quantum dot devices.
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By leveraging the insights and tools mentioned, researchers can optimize their Indium Arsenide research, enhance reproducibility, and drive advancements in this critical semiconductor material.