Monocrystalline silicon substrates (surface orientation (100), 40 × 40 mm, Telecom-STV Co., Ltd., Zelenograd, Russia) and stainless-steel plates (316SS, 16 mm diameter, Tob New Energy Technology Co., Ltd., Xiamen, China) were used as substrates for ALD. Prior to deposition, the silicon and stainless-steel substrates were cleaned in an ultrasonic bath in acetone and deionized water for 10 and 5 min, respectively. To remove the native silicon oxide layer, the silicon substrates were immersed for 5 min in 10% hydrofluoric acid solution(HF). Then, silicon substrates were cleaned using piranha solution (H
2SO
4/H
2O
2, volume ratio 7:3) for 20 min to remove organic contaminants and produce a hydroxylic surface. Finally, the silicon substrates were rinsed in deionized (DI) water and dried under an argon atmosphere [29 (
link)].
ALD of nickel–cobalt oxide (NCO), nickel oxide (NO), and cobalt oxide (CO) were performed with a commercial R-150 setup (Picosun Oy, Espoo, Finland) at a temperature of 300 °C and a reactor base pressure of 8–12 hPa. Bis(cyclopentadienyl) nickel(II) and Bis(cyclopentadienyl) cobalt(II) (Ni(Cp)
2, Co(Cp)
2; 99%, Dalchem, Nizhny Novgorod, Russia) were used as the nickel and cobalt-containing precursors. Co(Cp)
2 and Ni(Cp)
2 were kept in stainless-steel bottles (Picohot™ 200, Picosun Oy) and heated during deposition to 160 and 110 °C, respectively. The pulse times and purge times were 1 s and 10 s for both Co(Cp)
2 and Ni(Cp)
2. Remote oxygen plasma was used as a counter-reagent. The plasma power was 3 kW, with a frequency range of 1.9–3.2 MHz. The total plasma pulse time was 19.5 s (Ar purge during 0.5 s with flow rate 40 sccm; Ar and O
2 plasma purge during 14 s with flow rate 90 sccm; Ar purge during 5 s with flow rate 40 sccm). Deposition conditions were based on our previous studies devoted to obtaining cobalt and nickel oxide [55 (
link),56 (
link)].
The spectroscopic ellipsometry parameters (Ψ and Δ) for films deposited on a silicon substrate were measured out with an Ellips-1891 SAG ellipsometer (CNT, Novosibirsk, Russia) in a wavelength range from 370 to 1000 nm and an incidence angle of 70°. The Spectr software package (1.10, CNT, Novosibirsk, Russia) was used to construct and fit a structural-optical model function. After fitting the parameters of the optical model and experimental spectra, the thicknesses of the films were calculated. The errors of the film thickness calculation were no more than 0.3 nm. The gradient of the thickness (
GT) was calculated using Equation (1):
where T
max and T
min are the maximum and minimum film thicknesses, respectively [29 (
link)].
X-ray reflectometry (XRR) and X-ray diffraction (XRD) studies were performed with a Bruker D8 DISCOVER (Cu-Kα = 1.5406 Å) diffractometer. Surface-sensitive grazing incidence XRD (GIXRD) modes were used for XRD measurements using a 2θ range of 30–65° with a step of 0.1° and an exposure of 1 s at each step. The incidence angle of the primary X-ray beam was 0.7°. XRR measurements were performed in an angle range of 0.3–5° (increment 0.01°) using symmetric scattering geometry. The obtained results were processed by the Rietveld method using the TOPAS software package (ver. 5, Bruker, Billerica, MA, USA) and by the simplex method using the LEPTOS (ver. 7.7, Bruker, Billerica, MA, USA) for XRD and XRR, respectively.
X-ray photoelectron spectra (XPS) were acquired with an Escalab 250Xi spectrometer (Thermo Fisher Scientific, Waltham, MA, USA). The samples were sputtered by Ar
+ ions with an energy of 500 eV for 30 and 45 or 90 s. The samples were excited by Al-Kα (1486.7 eV) X-rays at a pressure of 7 × 10
−8 Pa.
Scanning electron micrographs of planar and cross-sectional views were obtained by a Supra 55 VP scanning electron microscope (SEM, Zeiss, Oberkochen, Germany) with a Gemini-I column and a field emission cathode. Spatial resolution was about 1.3 nm at an accelerating voltage of 15 kV. A total of 3–4 randomly selected positions on the surface of the sample were investigated. Everhart–Thornley and InLens secondary electron detectors were used for SEM studies. Energy-dispersive X-ray (EDX) analysis was performed using the INCA X-Max system (Oxford Instruments, High Wycombe, UK) installed on the SEM Supra 55 VP.
Stainless-steel plates with deposited films were used for electrochemical studies. Lithium foil, polyolefin porous film 2325 (Celgard, Charlotte, NC, USA), and TC-E918 (Tinci, Guangzhou, China) solutions were used as the counter, separator, and electrolyte, respectively. The composition of TC-E918 was a 1M solution of LiPF
6 in a mixture of organic carbonates (ethylene carbonate, propylene carbonate, diethyl carbonate, ethyl methyl carbonate, vinylene carbonate). The coin cells (CR2032) were assembled in an argon atmosphere using an OMNI-LAB glove box (VAC). Cyclic voltammetry (CV) was performed using a PGSTAT302N+ potentiostat (Autolab, Utrecht, The Netherlands) in a range of 0.01–3.00 V with a scan rate of 0.5 mV/s. Discharge tests at different current densities were run with a CT3008W-5V10mA charge/discharge stand (Neware, Shenzhen, China), calibrated to work with low currents in a voltage range from 3.00 V–0.01 V, and current densities of 10, 20, 40, 80, 160, 320, 480, 640, 800 µA/cm
2. Deconvolution of the CV patterns was performed using the Origin (ver. 9.0.0) software package.
Koshtyal Y., Mitrofanov I., Nazarov D., Medvedev O., Kim A., Ezhov I., Rumyantsev A., Popovich A, & Maximov M.Y. (2021). Atomic Layer Deposition of Ni-Co-O Thin-Film Electrodes for Solid-State LIBs and the Influence of Chemical Composition on Overcapacity. Nanomaterials, 11(4), 907.