Morphological and elemental characterization of the fabricated composites was performed using scanning electron microscopy (SEM, FEI Quanta Inspect, Thermo Fisher Scientific Inc, Waltham, MA, USA) and energy dispersive X-ray spectroscopy (EDX, 10 keV). The topography and surface roughness of the fabricated samples doped with SiC and ZnO after polishing were analyzed via white light interferometry (WLI) using a 3D optical profilometer (Profil3D
®, Filmetrics, San Diego, CA, USA).
Capacitance measurements were performed using an
HP 4284A LCR meter (Hewlett-Packard, Palo Alto, CA, USA). Measurements were performed for frequencies ranging from 1 kHz to 1 MHz and for biases ranging from 0 V to ±2 V. From the capacitance measurements, the dielectric constant was extracted using the following equation:
where C
x is the measured capacitance, ε
o = 8.854 × 10
−12 CV
−1 m
−1 is the dielectric permittivity of vacuum, ε
x is the composite material dielectric constant, A is the capacitor area, and d is the material thickness.
Skorda S., Bardakas A., Vekinis G, & Tsamis C. (2024). Influence of SiC and ZnO Doping on the Electrical Performance of Polylactic Acid-Based Triboelectric Nanogenerators. Sensors (Basel, Switzerland), 24(8), 2497.