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Molybdenum mo powder

Manufactured by Merck Group
Sourced in United States

Molybdenum (Mo) powder is a refractory metal powder with a high melting point and excellent corrosion resistance. It is commonly used in laboratory and industrial applications as a source material for various processes and equipment.

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2 protocols using molybdenum mo powder

1

Synthesis of MoOx Nanoparticles

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Figure 1 illustrates schematic illustrating the synthesis of MoOx NPx. To synthesize MoOx NPs, 1 g of molybdenum (Mo) powder (Sigma Aldrich, St. Louis, MO, USA) with a size of <150 nm and purity of 99.99% was added to a beaker that was placed in the ice bath, followed by slowly pouring 10 mL of hydrogen peroxide (H2O2) (Sigma Aldrich) solution into the beaker and stirring for 1 h. When the color of the solution changed from grey to orange, 10 mL of propionic acid (Sigma Aldrich) with a purity of 99.5% was added to the solution and stirred at 60 °C for 24 h to ensure that it was fully dissolved. MoOx powder was obtained after vacuum distillation of the dissolved solution at 50 °C for 30 m. The powder was dispersed in ethanol (EtOH) (Daejung Chemical and Metals, Gyeonggi, Republic of Korea) at a pre-determined ratio.
We synthesized a colloidal suspension of zinc magnesium oxide Zn0.9Mg0.1O NPs using the sol–gel method [43 (link)].
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2

Growth and Fabrication of MoTe2 Single Crystals

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Growth of single crystals: Large, well-formed, ribbon-like single crystals of MoTe2 and Mo0.9W0.1Te2 alloy were grown by chemical vaper transport (CVT) with iodine (I) as the carrier gas. Stoichiometric amounts of tungsten (W) powder (99.9%, Sigma-Aldrich), molybdenum (Mo) powder (99.95%, Sigma-Aldrich) and tellurium (Te) powder (99.95%, Sigma-Aldrich) with a total weight of 500 mg, plus an extra 35 mg of I as the transport gas were sealed in an evacuated 20 cm long quartz tube under vacuum at 10 -6 Torr. The quartz tube was placed in a three-zone furnace. Firstly, the reaction zone was maintained at 850 °C for 30 h with the growth zone at 900 °C in order to prevent the transport of the product and a complete reaction; then the reaction zone was heated to 1070 °C and held for 7 days with the growth zone at 950 °C. Finally, the furnace was naturally cooled down to room temperature and the single crystals were collected in the growth zone. Residual I was cleaned using acetone before measurement.
Device fabrication: Devices were fabricated on exfoliated MoTe2 or Mo0.9W0.1Te2 flakes with thickness ranging from 100~300 nm and typical dimensions being 20 um ×20 um assembled on SiO2/Si substrates. Electrodes were defined by electron beam lithography followed by physical vapor deposition of 300 nm Ti/100 nm Au film.
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