A field emission scanning electron microscopy (SEM; S4800; Hitachi, Japan) was used to observe the morphology of the TiO2 on the surface of silica nanoparticles. Fourier transform infrared spectroscopy (FTIR; Nicolet 6700; American) of the core–shell nanoparticle was obtained in the region 400–4000 cm−1. The thickness of the shell was investigated by Transmission Electron Microscope (TEM; Tecnai F20; EI, America). The crystalline structure of the core–shell nanoparticle was characterized using TEM selected-area electron diffraction (SAED). The haze of the coating was measured by a haze meter (WGT-S, Shanghai Chenguang Instrument CO. LTD). The transmission and reflection of the coating were measured by an ultraviolet visible near-infrared spectrophotometer (UV-Vis-NIR; Lambda 950; Perkin Elmer, America). The incident angle dependence reflectivity were tested via the spectroscopic ellipsometry measurements (M-2000DI, J.A.Woollam Co, Inc, USA). The photographs of the films were recorded with a Canon EOS 500D digital camera.
M 2000 di
Manufactured by J.A. Woollam Co.
Sourced in United States
The M-2000 DI is a spectroscopic ellipsometer manufactured by J.A. Woollam Co. It is designed to measure the optical properties of thin films and bulk materials.
Automatically generated - may contain errors
Lab products found in correlation
S 4800, by Hitachi (3 mentions)
Eos 500d digital camera, by Canon (1 mentions)
Lambda 950, by PerkinElmer (1 mentions)
Uv 3600, by Shimadzu (1 mentions)
D max 2500, by Rigaku (1 mentions)
Ultima 3 x ray diffractometer, by Rigaku (1 mentions)
Uv 2401 pc spectrophotometer, by Shimadzu (1 mentions)
D8 disconver, by Bruker (1 mentions)
Escalab xi, by Thermo Fisher Scientific (1 mentions)
Uv 3600 spectrophotometer, by Shimadzu (1 mentions)
7 protocols using m 2000 di
1
Characterization of Core-Shell Nanoparticles
2
Characterization of Thin Film Layers
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The thickness of amorphous Si, TiO2, Ni, Au and Ag layers on polished Si(100) monitor substrate was determined by spectroscopic ellipsometer (M-2000 DI, J.A. Woollam Co., Inc.) at 60° and 70° incident angle, by fitting the amplitude ratio (Ψ) and phase shift (Δ) of polarized light with the Cauchy dispersion model for a-Si and TiO2, and a tabulated metallic model for Ni, Au, and Ag. The morphology was carried out by field emission scanning electron microscope (FESEM, Hitachi S-4800, 5 kV). XPS analysis was conducted on a Physical Electronics PHI 1600 ESCA system with an Al Kα X-ray source (1486.6 eV). The binding energy was calibrated against the C 1 s photoelectron peak at 284.6 eV as the reference. The optical reflectance measurement of the Si was performed using spectrophotometer (Shimadzu UV-3600). The X-ray diffraction (XRD) (D/MAX-2500, Rigaku) spectra were collected over a 2θ range from 20° to 80° at a scanning speed of 0.02° per step.
3
Comprehensive Characterization of ZnO Films
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A field emission scanning electron microscope (Hitachi S-4800, Japan) was used to acquire SEM images of ZnO surface. The XRD patterns of the ZnO films were taken using a Rigaku Ultima III X-ray diffractometer (Rigaku, USA) fitted with a small-angle X-ray scattering at 40 kV accelerating voltage and 44 mA current. Dielectric functions were obtained using a spectroscopic ellipsometry study. To obtain SE data, a rotating-compensator ellipsometer J. A. Woollam Co., (St. Lincoln, NE, USA) M-2000 DI was used. Unpolarized absorbance and transmittance spectra of the films were taken using a Shimadzu UV 2401PC Spectrophotometer. Spectroscopic ellipsometry data were taken to identify their dielectric functions. It is important to note that all these measurements were conducted at room temperature.
4
Synthesis and Characterization of α-Ti2O3 Single Crystals
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The α-Ti2O3 single crystals were synthesized by mixing high-purity TiO2 and TiH4, and then calcining the mixture at 1000 °C in vacuum61 (link),62 (link). Prior to structural characterization and electrical and optical measurements, the single crystals were cut parallel to the (0001) and (11 0) surfaces and then polished. For the XRD measurements, the sample was characterized using a Bruker D8 DISCONVER high-resolution diffractometer, which is equipped with Cu Kα radiation source and LynxEye detector. The X-ray source is operated at 40 kV and 60 mA. The resistivity vs, temperature data were taken using the standard four-probe method in a commercial Quantum Design physical property measurement system (PPMS). A commercial spectroscopic ellipsometer (M2000DI and IR-VASE Mark II; J.A. Woollam Co.) was used to measure the optical response in the xy-plane and along the z-axis of the α-Ti2O3 single crystals. The measurement was operated in an ultra-high vacuum cryostat at room temperature.
5
Optical Characterization of Strained Oxides
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Optical spectroscopic characterization was performed using a spectroscopic ellipsometer (M-2000 DI; J.A. Woollam Co.). The reflectance of the bare substrate, STO (10 u.c.)/substrate, and SRO (1 u.c.)/STO (10 u.c.)/substrate were measured separately, and the optical conductivity was extracted for each layer (Supplementary Fig. 12 ). It was challenging to obtain the optical spectra of samples under higher tensile strain (+1.7 and +2.5%). The as-received KTO(001) substrate had 3–4 nm-deep surface holes. Although ARPES measurements were not seriously affected by such holes, obtaining reliable optical data from spectroscopic ellipsometry was challenging. In addition, as PSO(110) (+2.5%) single crystalline substrates have orthorhombic structures, it was quite difficult to subtract the strongly anisotropic responses.
6
Morphological and Structural Characterization of TiO2 Films
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The morphology was captured by field emission scanning electron microscope (FESEM, Siachi Regulus 8100) and element mapping was scanned by its energy dispersive spectroscopy. The Grazing incidence X-ray diffraction (GIXRD) (Smartlab) was characterized over a 2θ range from 20° to 80° at a scanning speed of 2° per step with Cu Kα radiation at 60 kV and 220 mA. The X-ray photoelectron spectroscopy was collected from ESCALAB Xi+ (ThermoFisher Scientific) with an Al Kα X-ray source (1486.6 eV) and the data were calibrated against the C 1 s photoelectron peak as the reference where binding energy located at 284.8 eV. The optical transmission spectra of the samples were measured by Shimadzu UV-3600 spectrophotometer. The thickness of TiO2 and sputtered films were measured and fitted through spectroscopic ellipsometer (M-2000 DI, J. A. Woollam Co., Inc.).
7
Spectroscopic Ellipsometry for SAM Thickness
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The thickness of the
SAMs was measured
with an M-2000DI spectroscopic ellipsometer (J. A. Woollam Co., Inc.,
USA). Thickness values were extracted from fits to the data taken
at 45, 50, 55, 60, 65, and 70° over wavelengths from 200 to 1000
nm. The sample surface was modeled as a Si substrate with an oxide
layer and a Cauchy layer. The thickness of the silicon oxide after
the oxidative cleaning treatment was 16 ± 1 Å (average of
three samples). The thickness of the monolayer films was calculated
with an index of refraction of 1.45.20 (link),21 Film thickness
values are averages of at least three measurements. The observed variability
of the thickness of organic films prepared under identical conditions
was ∼2 Å, i.e., the variation of chemically identical
films which were prepared at different times (not the same “batch”).
In some cases, we prepared a batch of samples (10 to 15) with the
C11 vinyl-terminated film. We determined the film thickness
for several samples (typically three to five) rather than for each
sample individually. Values between 14.5 and 15.5 Å are reported
as ∼15 Å (mean value) for all samples from the same batch
in the following. The reproducibility (standard deviation) of the
thickness for a single film was ∼0.2 Å (measured on at
least three different spots on the same surface).
SAMs was measured
with an M-2000DI spectroscopic ellipsometer (J. A. Woollam Co., Inc.,
USA). Thickness values were extracted from fits to the data taken
at 45, 50, 55, 60, 65, and 70° over wavelengths from 200 to 1000
nm. The sample surface was modeled as a Si substrate with an oxide
layer and a Cauchy layer. The thickness of the silicon oxide after
the oxidative cleaning treatment was 16 ± 1 Å (average of
three samples). The thickness of the monolayer films was calculated
with an index of refraction of 1.45.20 (link),21 Film thickness
values are averages of at least three measurements. The observed variability
of the thickness of organic films prepared under identical conditions
was ∼2 Å, i.e., the variation of chemically identical
films which were prepared at different times (not the same “batch”).
In some cases, we prepared a batch of samples (10 to 15) with the
C11 vinyl-terminated film. We determined the film thickness
for several samples (typically three to five) rather than for each
sample individually. Values between 14.5 and 15.5 Å are reported
as ∼15 Å (mean value) for all samples from the same batch
in the following. The reproducibility (standard deviation) of the
thickness for a single film was ∼0.2 Å (measured on at
least three different spots on the same surface).
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