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S powder

Manufactured by Merck Group
Sourced in Singapore

S powder is a laboratory equipment product manufactured by Merck Group. It is a fine, white, crystalline powder used in various scientific and research applications. The core function of S powder is to serve as a standardized reference material or calibration standard for analytical instruments and procedures.

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11 protocols using s powder

1

CVD-Grown MoS2 Monolayer Synthesis

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CVD-MoS2 was prepared using chemical vapor deposition method with carbon based materials as a growth promoter. High-crystal-quality MoS2 can be grown on a silicon substrate with 300 nm SiO2 layer on top inside a hot-wall horizontal tube furnace. To be brief, the MoS2 films were synthesized using high purity MoO3 (99%, Aldrich) and S powder (99.5, Sigma-Aldrich) as precursors. The precursors were placed in two separated Al2O3 crucibles and the substrates were placed on the downstream side of the Ar carrying gas. A piece of carbon cloth was put on top of MoO3 powder for better growth control. The growth chamber was firstly heated to 105 °C with Ar flow rate of 1000 sccm, this step helps to remove the oxygen and moistures in the chamber. After that, the temperature was further increase to 700 °C with a heating rate of 15 °C/min. MoS2 monolayer in a triangle shape were obtained by annealing at 700 °C for 10 min followed by a naturally cooling process to room temperature Ar flow rate was kept at 10 sccm during MoS2 growth.
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2

Synthesis of MoS2 on Carbon Cloth

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Graphene oxide powder was purchased from Graphene Supermarket, Calverton, NY, USA. MoO3 (purity 99%) and S powder (purity 99.5%) powder purchased from Sigma-Aldrich Co. (Singapore) were directly used for MoS2 synthesis without further purification. Carbon cloth was purchased from Hesen Shanghai Co., Ltd, China.
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3

Tailored MoS2 Growth via DP Synthesis

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A horizontal tube furnace was used for the DP growth of MoS2. S powder (150 mg, 99.5%, Sigma-Aldrich) was loaded upstream where the temperature was 150°C and the SG-Mo was placed in the center of the furnace, serving as Mo precursor and growth substrate simultaneously. Before growth, the tube was pumped to 0.05 Torr and refilled with Ar to ambient pressure which was repeated three times to eliminate residual oxygen and water. During the growth, the temperature was increased to 730–750°C at a rate of 50°C min−1 and the growth lasted for 10–20 min. Ar was used as the carrier gas with a flow rate of 80 sccm at 1.2–2.0 Torr. After growth, the furnace was cooled to 200°C under 80 sccm of Ar flow.
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4

Epitaxial Growth of 2D TMDs

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Before the growth process, the Au(111) single crystal (MaTecK, Jülich, Germany) with a purity of 99.999% was cleaned by several cycles of Ar+-sputtering (1 kV, 30 min, ≈4 μA cm−2) and annealing (≈600 °C, 30 min) in an ultrahigh vacuum (UHV) chamber. For the growth, we used a CVD process in a two-zone furnace outside of the UHV system at ambient pressure, as described in ref. 7 . In the first zone, the S powder (purity of 99.98%, Sigma Aldrich) or the Se pellets (purity of 99.98%, Sigma Aldrich) were placed in a Knudsen cell and heated up to 200 °C (sample (i)) or 300 °C (sample (ii)), respectively. Additionally, for the MoSe2 sample with a higher amount of Se discussed in the paper, we heated the Knudsen cell with the Se pellets up to 450 °C (sample (iii)) to provide this excess Se concentration. The MoO3 precursor (purity of 99.97%, Sigma Aldrich) and the prepared Au(111) single crystal were placed into the second zone. Here, the temperature was held at 700 °C and 750 °C to prepare MoS2 and MoSe2, respectively. In addition, a mixture of Ar and H2 (100 sccm and 10 sccm, respectively) was used as carrier gas. The subsequent annealing steps of the TMD samples were carried out in a UHV chamber to clean the sample from airborne impurities.
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5

CVD Synthesis of WS2 Monolayers

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WS2 monolayers were grown by CVD on a SiO2 (300 nm)/Si substrate. Ammonium metatungstate hydrate ((NH4)6H2W12O40·xH2O (Sigma-Aldrich, ≥ 66.5% (W)) was used as a W source and sodium cholate hydrate (Sigma-Aldrich) was used as a promoter, which were dissolved in DI water separately. Then, they were well-mixed with a medium solution (OptiPrep). After dropping the mixed solution onto the Si/SiO2 substrate, we conducted spin-coating process to spread the solution uniformly (Jeong et al., 2017 ; Yun et al., 2015 (link)). S powder (Sigma Aldrich, ≥ 99.95 %) was supplied continuously during the CVD process. A two-zone furnace was separately heated with a steady flow of Ar gas, 500 standard cubic centimeters per minute (sccm), to the set temperatures with a ramping rate: 200°C at 33°C/min for the S source and 770°C with 128°C/min for the SiO2/Si substrate with W. The temperature was maintained at the set temperature for 12 min, and afterward, the furnace was gradually cooled to room temperature.
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6

Synthesis of 2D Transition Metal Dichalcogenides

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Preparation of precursor: 20.6 mg Na 2 MoO 4 (99 % , Aladdin) or 88.2 mg Na 2 WO 4 (98 % , Adamas) dissolved into 10 mL DI water to make precursor solution, respectively. Substrate rinsed by O 2 plasma (CIF Tech Co., Ltd. CPC-C-40 kHz) to improve the hydrophilicity. The substrate first coated 0.01 M Na 2 MoO 4 /0.03 M Na 2 WO 4 solution was then placed into the center of the furnace. Crucible with 80 mg S powder (99.5 % , Sigma Aldrich) 10 cm upstream the heating center. Before heating, the tube was flushed with 300 sccm Ar for 10 min to keep an inert environment. Then the furnace was heated to 850  C in 45 min and was kept at this temperature for 40 min with 280 sccm Ar to realize a molten liquid precursor state. Finally, the reaction was finished within 2 min by introducing the sulfur powder into the heating zone for the growth of MoS 2 . For the growth of WS 2 , 270 sccm Ar and 30 sccm H 2 mixture gases were introduced to convey the sulfur vapor and other growth conditions were same as that of MoS 2 . After growth, the furnace was naturally cooled down to room temperature.
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7

Synthesis of Li-S and Na-S Electrodes

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The Li rod (99.9%, trace
metals basis) and Na cubes stored in a mineral oil (99.9%, trace metals
basis) were purchased from Sigma-Aldrich and were stored in a glovebox
under an Ar atmosphere. S powder (99.998%, trace metals basis, Sigma-Aldrich)
was dried in a vacuum oven at 100 °C overnight before use. Li
and Na metals were wiped with a tissue paper to remove the residual
oil and freshly cut with stainless-steel blades. Subsequently, they
were sandwiched between two Celgard separators and roll-pressed to
approximately the same thickness (0.15 mm). The Celgard separator
was used during pressing since Li and Na adhere strongly to the stainless-steel
pressing plate. After the Li(Na) pressing procedure, discs with a
diameter of 10 mm were cut and attached to stainless steel discs with
a diameter of 18 mm. The stainless-steel discs act as a supporting
substrate since the alkali metals easily lose their form. The so-prepared
electrodes were placed in homemade glass ampoules with a length of
600 mm together with the S powder. The glass ampoule was placed in
an oven and heated at different temperatures (in the temperature range
from 298 to 433 K). All processes were performed in a glovebox (both
O2 and H2O levels were below 0.1 ppm). A schematic
diagram of the LixSy(NaxSy) synthesis is shown in Figure 1.
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8

Synthesis of Cu-S Nanocomposite

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Chemical reagents, including Cu nano-powder (25 nm, ≥ 99.5%), S powder (≥ 99.5%), 2-Mercaptoethanol (≥ 99.0%), and hydrazine solution (35 wt%), were ordered from Sigma-Aldrich. Cu powder (250–300 mesh, ≥ 99.7%), NaOH (≥ 96.0%), and anhydrous ethanol were ordered from Sinopharm Chemical Reagent Co., Ltd.
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9

MoS2 Growth by Chemical Vapor Deposition

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A horizontal tube furnace was used for the growth of MoS2. S powder (100 mg, 99.5%, Sigma-Aldrich) was loaded upstream at 220°C. MoO3 powder (10 mg, 99.5%, Sigma-Aldrich) was placed in the center of the furnace. SiO2/Si (Si substrate with a 300 nm thick thermally grown oxide) was used as growth substrate and placed on top of MoO3 powder with the oxide layer facing down. The temperature was increased to the growth temperature of 700°C at a rate of 50°C min−1. During growth, Ar was used as the carrier gas with a flow rate of 80 sccm at ambient pressure, and the growth lasted for 10 min.
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10

Fabrication of MoS2 Thin Films

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The SiO2/Si (270 nm SiO2) substrates were purchased from Suzhou Ruicai Semiconductor Co., Ltd.; MoO3 (≥99.5%) and S powder (≥99.5%) were purchased from Sigma-Aldrich (Shanghai) Trading Co., Ltd.; NaCl (≥99.5%), chloroplatinic acid and sodium molybdate (99.0%) were purchased from Shanghai Aladdin Biochemical Technology Co., Ltd.
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