Tm 1000 scanning electron microscope
The TM-1000 is a scanning electron microscope (SEM) manufactured by Hitachi. It is designed to provide high-resolution images of a wide range of samples by scanning the surface with a focused electron beam. The TM-1000 is capable of magnifications up to 10,000x and offers a simple and user-friendly operation.
Lab products found in correlation
22 protocols using tm 1000 scanning electron microscope
Ultrastructural Analysis of Anther Development
Dialyzer Fiber Clotting Evaluation
Preparing Botanical Specimens for SEM Imaging
Characterization of MgONFs using XRD, FTIR, SEM, TEM
Scanning Electron Microscopy Imaging
images were obtained on a Hitachi TM-1000 scanning electron microscope
(Japan) at an accelerating voltage of 15 kV and a magnification from
100 to 10 000× with a resolution of 30 nm. The SEM images
were treated using the ImageJ software (version 1.8.0_112).
Characterizing Filtration Material Deposits
of deposits formed on the fibers of the filtration material was investigated
using scanning electron microscopy (SEM) and atomic force microscopy
(AFM). These techniques provide information about the character of
coating (homogeneous, continuous, rough, or smooth) at the microscopic
level and also help to explain the observed results of the materials’
wettability measured in the macroscale. The scanning electron microscopy
images were obtained using a Hitachi TM-1000 scanning electron microscope.
The analysis of surface topography was carried out using a MultiMode
Nanoscope 8 (Bruker) atomic force microscope. In all experiments,
ACSTA probes (AppNano) were applied (nominal spring constant 7.8 N/m,
nominal frequency 150 kHz). All measurements were performed in ambient
conditions on dry samples. The analysis of sample surface scans with
the AFM enabled determining the values of three parameters: average
roughness (Ra), root-mean-square roughness
(Rq), and maximum profile height (Rt), which characterize the geometry of the surface
structure.
Grain Morphology and Microstructure Analysis
Characterizing Porous Materials through Tensile Testing
Tensile loading measurements on parallelepipedal samples of about 30×5×0.5 mm were performed using an Instron 5565 apparatus. In the linear elastic regime, the dependence of the axial force F with the axial strain was obtained and treated according to Hooke's law:
where σ = F/S is the axial stress, S the initial cross-section area of the sample, and ε = (L-L0)/L0 with L0 and L the sample's length before and during the test, respectively.
Mass Spectrometry Analysis of Oligonucleotides
Characterization of Graphene Oxide and Active Graphene
The crystallite sizes of the samples (GO and JZGO) and the change of the interlayer distance between the samples before and after the reaction were measured by D/max-2550VB+/PC X-ray diffractometer, Rigalcu Co., Tokyo, Japan. The test uses Cu-Kα radiation, tube pressure 40 kV, tube flow 200 mA, wavelength λ = 1.54 Å, and scanning angle range of 5–90°. The surface morphology of the samples was characterized by a HITACHI / TM-1000 scanning electron microscope, HITACHI, Tokyo, Japan. The thermogravimetric curve of the sample was measured by a TG 209 F1 thermal analyzer, NETZSCH Co., Selb, Germany. The temperature range was from room temperature to 900 °C under a gas atmosphere of N2 with a gas flow rate of 10 mL/min.
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