The morphologies of the Ir1 −xVxO2 nanowires were characterized with a scanning electron microscope (SEM, Quanta FEI and Zeiss Auriga 60), and the structure and growth orientations were characterized via TEM (JEOL 3200 TEM), and the chemical composition of the nanowires determined with XEDS in the SEM, JEOL 3200 TEM, and NEOARM atomic resolution analytical electron microscope by JEOL. The Raman spectra were collected at room temperature with a Renishaw inVia confocal Raman microscope system with a 532 nm excitation laser with a nominal laser power of 50 µW and calibrated with a reference Si peak at 520 cm−1.
Invia confocal raman microscope system
Manufactured by Renishaw
Sourced in United Kingdom
The InVia confocal Raman microscope system is a high-performance analytical instrument designed for a range of scientific and industrial applications. The core function of the system is to provide non-destructive chemical and structural analysis of materials at the microscopic level through Raman spectroscopy.
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3 protocols using invia confocal raman microscope system
1
Ir1-xVxO2 Nanowire Characterization
2
Spectroscopic Analysis of Starch Samples
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The FT-IR features of starch samples were measured using Fourier transform infrared spectrometer (Vertex 70, Bruker, Karlsruhe, Germany). Dry samples were prepared at a ratio of 1 g starch/100 g KBr. Signal collection was performed at a scan speed of 4 cm−1 over a scan range of 4000 cm−1–400 cm−1.
Raman spectra of starch samples were measured using a Renishaw Invia confocal Raman microscope system (Renishaw, Gloucestershire, UK) with a 785 nm green diode laser source [23 (link)]. Signal collection was performed at a scan speed of 7 cm−1 over a scan range of 3200 cm−1–100 cm−1.
Raman spectra of starch samples were measured using a Renishaw Invia confocal Raman microscope system (Renishaw, Gloucestershire, UK) with a 785 nm green diode laser source [23 (link)]. Signal collection was performed at a scan speed of 7 cm−1 over a scan range of 3200 cm−1–100 cm−1.
3
Multimodal Characterization of Samples
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SEM images were obtained using a JEOL JSM-7800F field-emission scanning electron microscope at an acceleration voltage of 5 or 10 kV on a tilt stage. Before SEM imaging, the samples were coated with a layer of Pt using an Edwards Sputter Coater to enhance its conductivity. The optical images were collected via a COSSIM CMY-310 optical microscope. Raman spectrums were obtained via an inVia™ confocal Raman microscope system from Renishaw under a 532 nm laser.
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