The strained graphene on the SiO2/Si substrate was sequentially characterized by OM (Olympus BXFM-ILHS, Olympus Co., Ltd), SEM (5 kV, S-3400 I, Hitachi Co., Ltd), AFM (Dimension3100, Veeco Co., Ltd), and Raman spectroscopy with a 532 nm-excitation laser (LabRAM HR Evolution, Horiba Co., Ltd). To avoid laser-induced heating, all the laser powers used in our experiment were fixed at ∼2.5 mW. The FET measurements were conducted by a semiconductor parameter analysing system (4155C, Agilent Technologies Co., Ltd) under ambient conditions.
Bxfm ilhs
Manufactured by Olympus
Sourced in Japan
The Olympus BXFM-ILHS is a microscope system designed for bright-field and phase contrast observation. It features an infinity-corrected optical system and an integrated LED illumination unit. The BXFM-ILHS supports magnification ranges suitable for a variety of microscopy applications.
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5 protocols using bxfm ilhs
1
Characterization of Strained Graphene on SiO2/Si
2
Comprehensive Characterization of BLG
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Characterization of as-grown and transferred BLG was carried out by optical microscopy (Olympus BXFM-ILHS, Olympus Co., Ltd), scanning electron microscopy (SEM, 5 kV, S-3400, Hitachi Co., Ltd), confocal micro-Raman spectroscopy (LabRAM HR Evolution, Horiba Co., Ltd), and transmission electron microscopy (JEM-2100, JEOL Co., Ltd).
3
Comprehensive Characterization of Graphene
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The characterizations of graphene were carried out by SEM (3 kV, S-3400, Hitachi Co., Ltd.), XRD (X'Pert PRO, PANalytical Co., Ltd.), micro-Raman spectroscopy (532 nm wavelength excitation laser, LabRAM HR Evolution, Horiba Co., Ltd.), OM (yellow light by Shanghai 8XB-PC from Shanghai Optical Instrument Factory and blue light by Olympus BXFM-ILHS from Olympus Co., Ltd), EBSD using scanning auger electron spectroscopy (AES, PHI-710, ULVAC-PHI Inc.), AFM (Multimode 8 system equipped with a silicon probe SNL-10 from Bruker Co., Ltd.), and high-resolution AFM/STM (NT-MDT spectrum Instruments).
4
Raman Characterization of Nanohydrogel and HA-SH
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Cross-linked nanohydrogel and HA-SH polymer were characterized by Raman spectroscopy. Raman experiments were performed using a micro-Raman spectrometer (iHR320, Horiba, Kyoto, Japan) in backscattering geometry and a microscope (Olympus BXFM-ILHS, Olympus Corporation, Tokyo, Japan).
A diode-pumped solid state laser of 532 nm emission wavelength was used as the excitation source. Raman scattering light was collected using a 50× microscopy objective and dispersed with 600 grooves mm−1 grating and detected using a cooled charge coupled device array detector (Horiba Syncerity, Horiba, Japan).
A diode-pumped solid state laser of 532 nm emission wavelength was used as the excitation source. Raman scattering light was collected using a 50× microscopy objective and dispersed with 600 grooves mm−1 grating and detected using a cooled charge coupled device array detector (Horiba Syncerity, Horiba, Japan).
5
Raman Characterization of Nanomaterials
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The chemical structure of the NanoC, NanoS and synthesized polymer were characterized by Raman spectroscopy (RS). Raman spectra were recorded by a micro-Raman spectrometer (iH320, Horiba, Kyoto, Japan) in backscattering geometry and a microscope (Olympus BXFM-ILHS, Olympus Corporation, Tokyo, Japan).
A diode-pumped solid-state laser of 532 nm emission wavelength was used as the excitation source. Raman scattering light was collected using a 50× microscopy objective and dispersed with a 600 grooves mm−1 grating and detected using a cooled charge coupled device array detector (Horiba Syncerity, Horiba, Japan).
A diode-pumped solid-state laser of 532 nm emission wavelength was used as the excitation source. Raman scattering light was collected using a 50× microscopy objective and dispersed with a 600 grooves mm−1 grating and detected using a cooled charge coupled device array detector (Horiba Syncerity, Horiba, Japan).
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