Measurements were carried out using a PHI Quantera SXM instrument (Physical Electronics, Chanhassen, USA) equipped with a 180 hemispherical electron energy analyzer and a monochromatized Al Kα (1486.6 eV) source operated at 15 kV and 4 mA. The analysis spot had a diameter of 200 μm and the detection angle relative to the substrate surface was 45°. Standard deviations were calculated from measurements performed on two different areas. Data were analyzed using the Multipak software (version v.9.6.0, Physical Electronics). The depth probed by XPS analysis is between 5–10 nm.
Phi quantera sxm instrument
Manufactured by Physical Electronics
Sourced in Japan
The PHI Quantera SXM is a state-of-the-art X-ray photoelectron spectroscopy (XPS) instrument designed for advanced surface and material analysis. It provides high-resolution, quantitative information about the chemical composition and electronic structure of solid surfaces and thin films.
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4 protocols using phi quantera sxm instrument
1
XPS Analysis of Surface Composition
2
XPS Characterization of Thin Films
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Measurements were done using a PHI Quantera SXM instrument (Physical Electronics, Chanhassen, MN) equipped with a 180° hemispherical electron energy analyzer and a monochromatized Al Kα (1486.6 eV) source operated at 15 kV and 4 mA. The analysis spot had a diameter of 200 μm and the detection angle relative to the substrate surface was 45°. Standard deviations were calculated from measurements performed on two different areas. Data were analyzed using the Multipak software (Version 9.8.0.19, Physical Electronics GmbH, Ismaning, Germany). The depth probe of XPS analysis was between 5 and 10 nm.
3
Fabrication and Characterization of Silver-Based SAMs
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For high-resolution XPS analysis, a 90 nm-thick silver layer was deposited with Jsputter (ULVAC, Inc., Kanagawa, Japan) on a glass substrate after surface treatment by reverse sputtering and deposition of a 10 nm-thick Ti layer. For preparing SAMs on the sputtered silver thin film, 1, 5, and 10 μM of 10-CDT ethanol solution was deposited dropwise on the surface, and the substrates were kept at room temperature under dark conditions for about 15 h. Subsequently, the 10-CDT SAM immobilized silver surface was treated with PDTA·Fe(iii ) dissolved in 100 mM NaCl solution for chemical deposition of the silver chloride layer, without applying a voltage. Surface elemental analysis by XPS was performed using a PHI Quantera SXM instrument (ULVAC-PHI, Inc., Kanagawa, Japan) equipped with a 20 kV Al-Kα radiation source at the anode.
4
Comprehensive Materials Characterization Protocol
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X-ray diffraction (XRD) patterns were obtained at the range of 2θ from 5° to 90°, with a step size of 0.03° using diffracted intensity of Cu-Kα radiation (λ = 0.15418 nm) via an X’Pert Pro instrument (PAN Nallytical, Almelo, The Netherlands). Scherrer’s equation was applied for the calculation of the particle size of tested samples. In addition, elemental analysis was conducted via X-ray fluorescence (XRF) (S4 Pioneer instrument from Bruker AXS, Karlsruhe, Germany). Furthermore, the morphology of the catalyst surface as well as the element scanning was tested by transmission electron microscope (TEM), a JEOL JEM 2100 from Akishima, Japan. Surface composition of the selected samples was identified by energy dispersive spectrometer (EDS). Moreover, the valence states of Ru, Zn, Fe, and Mn as well as the kinetic energy of Zn LMM electrons on the catalyst surface were analyzed by X-ray photoelectron spectroscopy (XPS) using a PHI Quantera SXM instrument from ULVAC-PHI, Japan. Al Kα (Eb = 1486.6 eV) was chosen as the radiation source, and the vacuum degree was adjusted to be 6.7 × 10‒8 Pa. The C1s (Eb = 284.8 eV) line as the binding energy reference was used for calibrating and correcting the energy scale.
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