OM (Nikon ECLIPSE LV100ND), SEM(JEOL-6701F), Raman spectroscopy (HORIBA, Lab Ram ARAMIS; 532 nm laser excitation wavelength), AFM (VEECO, Multimode), PL (SPEX1403, SPEX; 532 nm laser excitation wavelength), XPS (Thermo U.K., K-alpha radiation), TEM (FEI Titan G2 Cube 60-300, accelerating voltage = 80 kV) and a voltage/current meter (Keithley 4200, Keithley Instruments) were all used in characterizing the SLS MoS2 nanosheets.
Titan cube g2 60 300
Manufactured by Thermo Fisher Scientific
Sourced in United States
The Titan Cube G2 60-300 is a laboratory equipment designed for high-performance sample analysis. It features a temperature range of 60°C to 300°C and a temperature accuracy of ±0.1°C. The equipment is intended for use in a variety of laboratory settings.
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Lab products found in correlation
Keithley 4200, by Tektronix (2 mentions)
K alpha, by Thermo Fisher Scientific (2 mentions)
Eclipse lv 100nd, by JEOL (1 mentions)
Lab ram aramis, by Veeco (1 mentions)
Spex1403, by SPEX (1 mentions)
Tecnai g2 f30 s twin, by Thermo Fisher Scientific (1 mentions)
Smartlab, by Rigaku (1 mentions)
Smartlab x ray diffractometer, by Rigaku (1 mentions)
V 670, by Jasco (1 mentions)
Technai g2 f20, by Thermo Fisher Scientific (1 mentions)
S 4700, by Hitachi (1 mentions)
Invia raman spectroscope, by Renishaw (1 mentions)
Dimension icon, by Bruker (1 mentions)
Verios 460, by Thermo Fisher Scientific (1 mentions)
Multimode 8, by Bruker (1 mentions)
Su8220, by Hitachi (1 mentions)
8 protocols using titan cube g2 60 300
1
Comprehensive Characterization of SLS MoS2 Nanosheets
2
Detailed Characterization of Catalysts
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A thermogravimetric analyzer (TGA8000, Woodbridge, ON, USA) was utilized to ascertain the metal loadings of the catalysts. This analysis revealed that all catalysts exhibited comparable metal loadings ranging from 18% to 20% by weight on carbon supports (refer to Figure S1). The average particle sizes and particle size distribution of the prepared catalysts were examined via transmission electron microscopy (TEM) (Tecnai G2 F30 S-Twin, FEI, Eindhoven, The Netherlands). In addition, high-resolution TEM (HR-TEM) (Titan G2 Cube 60-300, FEI, Eindhoven, The Netherlands) facilitated the observation of the carbon shell layer forming the Pt nanoparticles. Furthermore, using an X-ray diffractometer (SmartLab, Rigaku, Tokyo, Japan), the catalysts' crystal structure was investigated.
3
Morphological Analysis of Boron Nitride Nanotubes
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The morphology of BNNTs and impurity was investigated using scanning electron microscopy (NanoSEM-460, FEI, Hillsboro, OR, USA), transmission electron microscopy (TEM) (Technai G2 F20, FEI, Hillsboro, OR, USA) at 200 kV and high-resolution TEM (Titan G2 Cube 60-300, FEI, Hillsboro, OR, USA) at 80 kV. The SEM images of the samples were prepared by filtering the solution. The TEM image of the samples was fabricated by dropping the solution on the lacey carbon film on the copper grid. To measure the X-ray diffraction (XRD) of the samples, all XRD samples were prepared by filtering the solution on the PVDF membrane. The prepared samples were analyzed via SmartLab X-ray diffractometer (Rigaku, Tokyo, Japan) using Cu-Kα source (10° ≤ 2θ ≤ 90°). The dispersion ability of solutions was conducted by using a UV–Vis–NIR spectrometer (V670, Jasco, Seoul, Republic of Korea). The thermal gravimetric analysis (TGA) was conducted to confirm the presence of organic substances on the surface of purified BNNTs. The TGA was performed using the Q-50 model (TA instrument), with a sample mass of 5–10 mg and a heating rate of 10 °C/min under a nitrogen atmosphere.
4
Characterization and Sensing Properties of MoS2 Nanosheets
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The morphologies of the synthesized MoS2 nanosheets were investigated through transmission electron microscopy (TEM, Titan Cube G2 60-300, FEI company). X-ray diffraction (XRD, Rigaku) was conducted to identify the crystal phase of the synthesized MoS2 nanosheets with Cu–Kα radiation (λ = 1.5418 Å) at a current of 40 mA and voltage of 40 kV. For performing chemical-information Raman spectroscopy (inVia Raman spectroscope, Renishaw), X-ray photoelectron spectroscopy (XPS, K-alpha, Thermo Scientific) with an Al–Kα radiation (hν = 1486.6 eV) was used to examine the compositions of the MoS2 nanosheets. The morphological structures of the MoS2/SWCNT-based gas sensor samples were characterized by field-emission scanning electron microscopy (FE-SEM, Hitachi, S-4700) and energy-dispersive X-ray spectroscopy (EDS).
The electrical properties of the sensors were measured using a semiconductor parameter analyzer (Keithley-4200, Keithley Instruments, USA). NO2, CO, H2S, NH3, acetone, and ethanol gases were individually injected into the sensing chamber to analyze the resistance of the sensors toward them; the sensors were placed 2 cm from the gas inlet, and gas-sensing measurements were carried out at room temperature and under 25% relative humidity.
The electrical properties of the sensors were measured using a semiconductor parameter analyzer (Keithley-4200, Keithley Instruments, USA). NO2, CO, H2S, NH3, acetone, and ethanol gases were individually injected into the sensing chamber to analyze the resistance of the sensors toward them; the sensors were placed 2 cm from the gas inlet, and gas-sensing measurements were carried out at room temperature and under 25% relative humidity.
5
Graphene Transfer onto TEM Grids
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Using a direct transfer method69 (link), we transferred the graphene layer onto Au Quantifoil TEM grids. HR-TEM images and the corresponding selective area electron diffraction (SAED) patterns were taken by an FEI Titan cube G2 60-300 equipped with an image-aberration corrector and a monochromator. It was operated at an acceleration voltage of 80 kV to decrease the beam damage to the graphene layer, especially for detecting the graphene GBs.
6
Surface Characterization of Graphene Quantum Dots
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SEM (Verios 460, FEI) and atomic force microscopy (Dimension Icon, Bruker) were used to determine the surface morphology of the samples. Raman spectra were measured using a micro Raman spectroscope (alpha 300, WITec GmbH) using 532 nm. The UV-vis absorption spectra of the GQD-hBN samples were recorded on a Cary 500 UV-vis-near IR spectroscope, Agilent. XPS (K-Alpha, Thermo Fisher) and Nano-FTIR (neaSNOM, aspect) were performed to determine the composition of the GQD and confirm the formation of an interface between GQD and hBN. Low-voltage Cs aberration-corrected transmission electron microscopy (Titan Cube G2 60-300, FEI), operated at 80 kV with a monochromated electron beam, was used for EELS analysis. The spatial and energy resolutions for the EELS measurement are 2 nm and 1.5 eV, respectively.
7
Atomic Scale Characterization of WS2/Graphene
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SEM was conducted in secondary electron (SE) and backscattered electron (BSE) modes using a cold field‐emission scanning electron microscope (Hitachi SU‐8220) operated at the accelerating voltage of 1 kV. The surface morphology and conductance of the APBs in WS2/graphene heterostructure were determined by an atomic force microscopy (Bruker Multimode 8) operated in tapping and contact modes, respectively. Conductive AFM (C‐AFM) measurements were carried out at a DC bias of 300 mV; bias was applied through conductive Pt–Ir coated tips with a normal resonance frequency of ≈13 kHz and a spring constant of ≈0.2 N m−1.
TEM observations were performed using a FEI Titan cube G2 60–300 transmission electron microscope (located at UNIST) equipped with image‐ and probe‐aberration correctors. Dark‐field mode was used for analyzing the exact orientation of WS2 and confirming the global features of APB. Atomic resolution TEM and STEM modes were used for atomic structure analysis of each type of APB. For TEM analysis, the WS2/graphene heterostructures grown on SiO2/Si substrates were directly transferred on to TEM grids using a wet‐transfer method. All TEM experiments were performed at the acceleration voltage of 80 kV to minimize beam damage.
TEM observations were performed using a FEI Titan cube G2 60–300 transmission electron microscope (located at UNIST) equipped with image‐ and probe‐aberration correctors. Dark‐field mode was used for analyzing the exact orientation of WS2 and confirming the global features of APB. Atomic resolution TEM and STEM modes were used for atomic structure analysis of each type of APB. For TEM analysis, the WS2/graphene heterostructures grown on SiO2/Si substrates were directly transferred on to TEM grids using a wet‐transfer method. All TEM experiments were performed at the acceleration voltage of 80 kV to minimize beam damage.
8
Correlated GaSe Flake Analysis
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For matching between Raman and TEM results, S/TEM analysis was performed with the particular flakes, characterized by Raman spectroscopy. For S/TEM analysis, exfoliated GaSe flakes on the SiO2/Si substrate were transferred onto a TEM grid by a direct transfer. Because
GaSe is significantly oxidized in ambient condition, transfer should be completed in short time.
Direct transfer has advantages on reduced transfer time and clean without poly(methyl methacrylate) (PMMA) residue. Exfoliated GaSe flakes were analyzed using an aberration-corrected FEI Titan cube G2 60-300 with monochromator. Atomic resolution S/TEM was applied for the analysis of definite stacking order of trilayer GaSe. TEM image simulation was implemented in MacTempasX for interpreting exact stacking order. All S/TEM analysis was operated at 80 kV.
GaSe is significantly oxidized in ambient condition, transfer should be completed in short time.
Direct transfer has advantages on reduced transfer time and clean without poly(methyl methacrylate) (PMMA) residue. Exfoliated GaSe flakes were analyzed using an aberration-corrected FEI Titan cube G2 60-300 with monochromator. Atomic resolution S/TEM was applied for the analysis of definite stacking order of trilayer GaSe. TEM image simulation was implemented in MacTempasX for interpreting exact stacking order. All S/TEM analysis was operated at 80 kV.
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