S3204 08

Devices were characterized in a dry and nitrogen-filled glove box. The electrical characteristics and basic synaptic functions were measured by a semiconductor parameter analyzer (Keithley, 2636). Irradiation intensity of the device was measured by a photodiode (Hamamatsu, S3204-08), which have been previously calibrated by a luminance meter (Konica minolta, LS-100). The electroluminescence spectrum of OLETs was measured by Ocean Optics FLAME-S. AFM images were recorded with a Bruker Dimension Icon setup operating under ambient conditions, in tapping mode. SEM images were taken with Quanta FEG 250 from FEI Company. The thickness of the films was determined by the Alpha-Sep IQ Surface Profiler.

The EA/2-methoxyethanol [1:20 (v/v)] was spin-coated onto vertical nanoscaffold at 3000 rpm and dried for 10 min at 120°C. The emissive layer of SY or F8BT (dichlorobenzene; 10 mg/ml) was then spin-coated onto the vertical nanoscaffold modified with a thin EA layer and annealed at 170°C for 30 min in the glovebox. Last, PMMA (60 mg/ml) from n-butyl acetate was spin-coated on the emissive layer as the encapsulation layer and annealed at 90°C for 30 min in the glovebox. The area of the device amounted to 8.0 mm². KPFM imaging was performed with a Bruker Dimension Icon AFM. SP images were collected with Pt/Ir-coated silicon probes (Bruker SCM-PIT-V2; resonant frequency ≈ 75 kHz, k ≈ 3 N m⁻¹) at ambient conditions in the amplitude modulation mode. The J/L-V characteristics and efficiencies were measured using a Keithley 2636A Source Meter, and the irradiation intensity of the devices was measured by a photodiode (Hamamatsu S3204-08), which has been previously calibrated by a luminance meter (Konica Minolta, LS-100) (42 , 43 ).