A CW laser diode (λ = 532 nm, DJ532-40, Thorlabs Inc., Morganville, NJ, USA) was used for pumping the gain medium in the active microspheres. The free space laser beam was directed into the back port of the inverted microscope equipped with a 532 nm dichroic filter, effectively using the microscope as a confocal setup as shown in Figure 1 . The WGM modulated fluorescence spectra from isolated microspheres deposited onto the microscope glass cover slip were observed through the microscope and spectrally resolved and recorded using a spectrometer (iHR550, Horiba, Kyoto, Japan) equipped with a cooled CCD (Synapse 2048 pixels, Horiba, Kyoto, Japan).
Dj532 40
Manufactured by Thorlabs
Sourced in United States
The DJ532-40 is a diode-pumped solid-state (DPSS) continuous-wave laser that operates at a wavelength of 532 nm and has an output power of 40 mW. It is designed for use in various applications requiring green laser light.
Automatically generated - may contain errors
Lab products found in correlation
Ihr550, by Horiba (1 mentions)
Tcldm9, by Thorlabs (1 mentions)
Slit lamp, by Haag-Streit (1 mentions)
Sr830, by Stanford Research Systems (1 mentions)
Apd120a, by Thorlabs (1 mentions)
Pda200c, by Thorlabs (1 mentions)
Ds fi1, by Nikon (1 mentions)
Acton sp2300 spectrometer, by Teledyne (1 mentions)
Pixis 100 ccd, by Teledyne (1 mentions)
6 protocols using dj532 40
1
Whispering Gallery Mode Spectroscopy
2
Laser-based Visual Stimulation for Retinal Implants
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A Large Spot slit-lamp adapter (Iridex Corp., Mountain View, CA, USA) was used to project a 3-mm-diameter laser through a slit-lamp (Haag-Streit, Mason, OH, USA) into the eye. Two laser diodes (DJ532-40 and L852P150; Thorlabs, Newton, NJ, USA) were used to emit 10-ms pulses every 500 ms of either 532-nm 100-μW/mm2 green light or 852-nm 3.4-mW/mm2 infrared light. Green 532-nm light was used as a positive control to verify natural VEPs were elicited from retina over the implant. Although the device is sensitive to both visible and IR light, we used 852-nm IR light to activate the device to avoid natural stimulation of the rabbit photoreceptors. The laser diodes were mounted in a temperature-controlled mount (TCLDM9; Thorlabs) and driven by a Benchtop Laser Controller (ITC4020; Thorlabs). In patients, a glasses-mounted camera will capture the visual scene and project patterns of IR light into the implanted eye via a DLP pico display (Texas Instruments, Dallas, TX, USA) while still permitting visible light to pass through allowing for residual natural vision.
3
Optically Detected Magnetic Resonance
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Optically detected magnetic resonance was performed using a home-built optical resonator (based on a dielectric ring resonator), which allows for excitation of the sample and collection of photoluminescence in transmission mode). A 532 nm diode-pumped solid-state laser (DJ532-40 Thorlabs) was used for continuous excitation of the sample (the laser beam was depolarised before excitation of the sample). The integrated photoluminescence was collected by a silicon avalanche photodetector (APD120A Thorlabs) while the laser line was removed via a 532 nm notch filter (Semrock). The ODMR was carried out at X-band and the microwaves were square-wave modulated at frequencies between 17 Hz and 100 kHz. The change in photoluminescence owing to microwave absorption was monitored at the microwave modulation frequency using lock-in detection (Stanford Research Systems SR830) as the static magnetic field was swept through resonance.
4
Ultrafast Supercontinuum STED Microscopy
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A diode-pumped solid-state (DPSS) laser diode (532 nm, 40 mW; DJ 532–40, Thorlabs) was used as the STED light source for SX excitation measurement. A high-brightness supercontinuum (SC) generator was used as the STED light source for 3.40 eV excitation measurement16 (link). The initial pulse was produced using a typical all-normal-dispersion (ANDi) mode-locked fibre oscillator16 (link),17 (link). Output pulses were detected using a Pockels cell in a regenerative amplifier (RGA). The Yb:YAG thin-disk RGA output power was 0.3 W at a 1 kHz repetition rate. The 1 kHz pulse was compressed using a transmission grating compressor and chirped mirrors to 300 fs at a 1030 nm carrier wavelength. To produce the supercontinuum beam, a 500 fs pulse was propagated through a 2-cm-long SiO2 crystal column. Typical supercontinuum beam spectra ranged from 400 to 1000 nm, and an interferometric filter was used at 532 nm.
The laser wavelength was confirmed using a spectrometer (Bluewave, Stellar Net) after passing through the vector optical system. The laser light intensity was adjusted using a power meter (PDA 200 C, Thorlabs) and measured using a microscope camera (DS-Fi1, Nikon) after passing through an optical filter.
The laser wavelength was confirmed using a spectrometer (Bluewave, Stellar Net) after passing through the vector optical system. The laser light intensity was adjusted using a power meter (PDA 200 C, Thorlabs) and measured using a microscope camera (DS-Fi1, Nikon) after passing through an optical filter.
5
Characterization of 2D Materials
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The device morphology is analyzed using a scanning electron microscope (Hitachi-4300) under an accelerating voltage of 3.0 kV. A Labram Aramis Raman Spectrometer was used to carry out Raman and PL spectroscopy for both graphene and MoS2.
The layer number and quality of the materials were examined.
Optoelectronic Characterization Devices. To characterize the electronic properties of the devices, highly conductive Si in the substrate was wired and connected to a socket as a back gate. A Keithley 2400 source meter connected with two tungsten tips was used for measuring output characteristics. The gate bias was applied by another Keithley 2400 source meter. A 532 nm diode-pumped solid-state laser (Thorlabs, DJ532-40) was integrated into a confocal microscope to generate a beam with a spot size of ~150 um 2 as a light source for optoelectronic properties.
The layer number and quality of the materials were examined.
Optoelectronic Characterization Devices. To characterize the electronic properties of the devices, highly conductive Si in the substrate was wired and connected to a socket as a back gate. A Keithley 2400 source meter connected with two tungsten tips was used for measuring output characteristics. The gate bias was applied by another Keithley 2400 source meter. A 532 nm diode-pumped solid-state laser (Thorlabs, DJ532-40) was integrated into a confocal microscope to generate a beam with a spot size of ~150 um 2 as a light source for optoelectronic properties.
6
Cryogenic photoluminescence of WS2
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In the photoluminescence (PL) measurement, a 532 nm diode-pumped solid state laser (Thorlabs, DJ532-40) was used for excitation. The laser was reflected off a dichroic beam splitter and focused to a spot size of ~2µm by 50× ultra-long working distance objective. WS2 was placed in a flow microscopy cryostat (Janis, ST-500) with continuous liquid nitrogen flowing to keep the temperature constant at 77 K under vacuum of ~1×10 -6 mbar. PL spectra were collected by a custom-built confocal microscope imaging system coupled to a spectrometer with an attached CCD (Princeton Instruments Acton SP-2300 spectrometer with Princeton Instruments, PIXIS 100 CCD).
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