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Tapping mode cantilevers

Manufactured by Budget Sensors
Sourced in Bulgaria

Tapping Mode cantilevers are sensing components used in Atomic Force Microscopy (AFM) for surface analysis. They oscillate at their resonant frequency and make intermittent contact with the sample surface, allowing for high-resolution imaging and measurement of topographical features.

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2 protocols using tapping mode cantilevers

1

Protein Film Characterization on Mica

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After compression to the desired surface pressure, the protein films were transferred to freshly cleaved mica that was rinsed with ethanol and briefly blow‐dried with pressurized air directly before transfer by using a Filmlift FL‐1 (MGW Lauda). Lifting occurred with an approach speed of 25 cm min−1. After 24 s of contact with the interface, the substrate was lifted with a speed of 30 cm min−1. The samples were dried in a desiccator for 48 h, then measured at RT by using a Multimode AFM (Veeco Metrology) equipped with Tapping Mode cantilevers (BudgetSensors) with a spring constant of 5 N m−1, a nominal resonance frequency of 150 kHz, and a radius of <10 nm.
Images were recorded by using NanoScope (v. 7.30, Veeco) software and processed by using Gwyddion 2.49 (freeware; http://gwyddion.net).
On average, three scans were recorded over the same area at a scanning rate of 0.5 Hz with a ratio of set‐point amplitude to free amplitude of ≈0.8. Results are reproducible because similar structures were recorded over four different areas on average per sample. Height and phase images were recorded simultaneously.
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2

Nanoscale Imaging of Polymer Films

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Tapping mode AFM was performed on an Agilent 5420 microscope (Santa Clara, CA, USA) under ambient conditions using engagement setpoints between 0.9–0.95 of the free amplitude oscillation. The tapping mode cantilevers (BudgetSensors, Sofia, Bulgaria and Bruker, Billerica, MA, USA) had a resonant frequency of 300 kHz and a force constant of 40 N/m. For imaging the film/substrate interface, the PLA-removed thin films were placed upside down on double-sided transparent tape (ScotchBrand, St. Paul, MN, USA) and placed in liquid N2 for 30 s. Following liquid N2 exposure, the Si wafer was peeled away from the film providing access to the underside. These films were again exposed to a 10–20 s O2 reactive ion etch (150 W 50 KHz in 100 mTorr) on the underside to remove any HMDS, a thin PS wetting layer or adhesive residue [34 (link),61 (link)].
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