D5000 x ray powder diffractometer

Different analytical techniques were used to visualize and characterize the synthesized ZnO microstars. In order to analyze the size and morphology of the fabricated microstars, transmission electron microscopy (TEM) (Philips, Eindhoven, The Netherlands, CM10, HT 100 KV) was used. The verification of the XG-capped ZnO particles was performed using Fourier transform infrared (FTIR) spectroscopy (PerkinElmer Spectrum One, Waltham, Massachusetts, USA). The analysis was carried out using KBr pellets, and the data were collected for a range of 4000–400 cm⁻¹. X-ray diffraction (XRD) analysis was performed to characterize the synthesized microstars using a Siemens D5000 X-ray powder diffractometer. The data acquisition was carried out for an exploration range (2θ degree) of 10–80°.

X-ray diffraction was performed on a Siemens D5000 X-Ray Powder diffractometer using a Cu Kα source (λ = 1.54 Å).

Thin-film thickness was evaluated using a Bruker DektakXT profilometer, the standard deviation calculated on the average of 7 measurements at different points. The optical band gaps were evaluated by measuring the transmission spectra with a PerkinElmer Lambda 950 spectrometer equipped with an integrating sphere. The absorption coefficient (α) was calculated using the relation α(λ) = 1/t ln(1/T(λ)), where t is the sample thickness and T(λ) is the transmittance. The optical band gap was determined by plotting (αhν)² versus hν and fitting the linear region of the absorption edge (OriginPro 2020b). X-ray diffraction (XRD) measurements were performed on a D5000 X-ray Powder Diffractometer (Siemens), using Cu-K_α radiation. Raman spectroscopy was performed using a Renishaw inVia confocal Raman microscope, equipped with a 785 nm laser; data analysis was performed by using OriginPro 2020b. X-ray photoelectron spectroscopy (XPS) measurements were performed with a Thermo Scientific™ Nexsa™ Surface Analysis System, and the XPS spectra were recorded and processed using the Thermo Avantage software. An FEI Inspect-F scanning electron microscope (SEM) was used for imaging at an accelerating voltage of 10 kV.