Titan 3 g2 60 300 stem

Microstructural and elemental analyses were performed on the cross-section of the specimens by a scanning electron microscope (SEM) JSM-6610A operated at 20 kV and equipped with an energy dispersive spectroscopy detector (EDX). Deeper microstructural investigations were performed by high-resolution scanning transmission electron microscopy (HR-STEM) using a Cs-corrected FEI Titan 3 G2 60–300 STEM operated at 300 keV. The microscope is equipped with a Super X detector (4 Si-drift detectors) for chemical analyses by X-ray spectroscopy. HR-STEM samples were prepared by argon ion milling at cryogenic temperatures. VELOX software was used for elemental mapping, line profile acquisition, and data analysis [23 (link)]. Element quantification was performed by using the K-factor method [24 ]. HR-STEM micrographs were recorded with the annular dark field (ADF) and high angular annular dark field (HAADF) detectors and processed using the Digital Micrograph software. X-ray diffraction (XRD) measurements were conducted using a Cu-Kα radiation source (wavelength λ = 0.15405 nm) operated at 40 kV and 40 mA to identify constituent phases.

Scanning electron microscopy (SEM) observations and electron backscatter diffraction (EBSD) analyses were conducted with a JEOL JSM-7100F and an FEI XL30S-FEG operated at 15 kV and 20 kV, respectively. EBSD data were collected with a step size of 0.2 µm and analyzed using a TSL OIM system. The observations were made on the planes parallel to the rolling plane and at the middle thickness of the rolled specimens. Samples for the above microstructural analyses were ground with emery paper, polished with a 1-µm alumina suspension, and then finished with a 0.04-µm colloidal silica suspension. Transmission electron microscopy (TEM) observations were made using an FEI TITAN³ G2 60-300 S/TEM operating at 300 kV with a double spherical aberration (Cs) corrector. The TEM samples were prepared by cutting a 3-mm-diameter disk from each alloy specimen and then grinding it to form a thin film using a dimple grinder (Gatan Model 656). Next, we prepared thin foils through ion-beam milling of the disks (Gatan Model 691, PIPS).