Cryo- TEM images were acquired using a JEOL 2100 TEM microscope at a voltage of 200 kV. A 2 μL drop of each sample was deposited on a 100 μm lacey carbon film on a copper mesh grid (Electron Microscopy Sciences, Hatfield, PA). The grid was blotted for 5 s with filter paper to remove excess liquid before plunging the grid into liquified ethane (cooled by liquid nitrogen) to freeze the sample and ensure vitrification of the water in the sample. For heated samples, the sample and grid were kept on a heating block at 60 °C until immediately before blotting and cryo-plunging to prevent significant cooling of the sample before freezing. Vitrified grids were transferred to a cryo-transfer stage immersed in liquid nitrogen for insertion into the TEM microscope. TEM images were acquired at 6–12K magnification. During imaging, the samples were kept below −175 °C to prevent sublimation of the vitrified solvent.
2100 tem microscope
Manufactured by JEOL
The JEOL 2100 TEM (Transmission Electron Microscope) is a high-performance electron microscope designed for materials science and life science research. It is capable of producing high-resolution images and diffraction patterns of a wide range of samples. The JEOL 2100 TEM utilizes an electron beam to illuminate and interact with the sample, allowing for detailed observation and analysis at the nanoscale level.
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Lab products found in correlation
2 protocols using 2100 tem microscope
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Cryo-TEM Imaging of Vitrified Samples
2
Characterization of Graphene Nanowires
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Xplora Raman Spectroscope was used to measure the Raman spectra of the GNWs with a 532 nm line of the semiconductor laser. A Zeiss Supra 55 field emission scanning electron microscope (SEM) was used to observe the surface morphology of the synthesized GNWs. The optical transmittance of GNWs was measured by UV-Vis-NIR spectrometer (UV-2600) in the wavelength range from 300 to 1400 nm. The electrical properties of the GNWs were measured by the Hall effect measurement system (HMS 5000). High-resolution transmission electron microscopy (HRTEM) images were taken on a JEOL 2100 TEM microscope operated at 300 kV. The thickness of HfO2 was measured using a profilometer (Bruker, DektakXT-A). The surface roughness of GNWs was characterized by S600LS atomic force microscope (AFM). The capacitance–voltage (C–V) of the fabricated Al/HfO2/p-Si metal–oxide–semiconductor (MOS) capacitor was measured using a Keithley 4200 semiconductor parameter analyzer. The current–voltage (I–V) characteristics of the fabricated photodetectors were measured by Keithley 4200 source meter. Illumination was generated using a light-emitting diode (LED) with a beam diameter of 4 mm and a spectral wavelength of 532 nm in air.
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