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Itc4001

Manufactured by Thorlabs
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The ITC4001 is a temperature controller designed for precision control of thermoelectric coolers (TECs) and other heating/cooling devices. It features independent control of current and voltage, a high control bandwidth, and a flexible interface for integration into various systems.

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Lab products found in correlation

Pm100d, by Thorlabs (1 mentions) Afg3022c, by Tektronix (1 mentions) Cary 5000, by Agilent Technologies (1 mentions) Nova nanosem430, by Bruker (1 mentions) Linear polarizer, by Thorlabs (1 mentions) Quarter wave plate, by Thorlabs (1 mentions) Mdo3102, by Tektronix (1 mentions) Escalab 250, by Thermo Fisher Scientific (1 mentions) Ccs200, by Thorlabs (1 mentions) Fp100urt, by Thorlabs (1 mentions) Avaspec hs2048xl, by Avantes (1 mentions) Carry 50, by Agilent Technologies (1 mentions) Alpha 300, by WITec (1 mentions) Axio scope a1, by Zeiss (1 mentions) Sigma hd, by Zeiss (1 mentions) Dimension icon, by Bruker (1 mentions)

7 protocols using itc4001

1

Photocurrent Measurement Protocol

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Example 5

Electrical and photocurrent measurements. All electrical and photocurrent measurements were carried out in vacuum (pressure˜5×10−5 Torr) using a probe station (LakeShore CRX 4K), Keithley source-meters, and LabVIEW programs. The probe station was coupled to two different light sources by a multi-mode fiber optic cable. Wavelength-dependent photocurrent was measured with a 250 W Xenon arc discharge lamp coupled to a monochromator with line width of ˜20 nm (Newport 74125). The highest net power of ˜3 μW was achieved at a wavelength of 600 nm (FIG. 11A shows the full power spectrum). Power-dependent and time-dependent photocurrent measurements were performed using a laser diode with excitation wavelength of 515.6 nm (LP520MF100, Thor Labs) operating in a constant-current mode while the temperature (25° C.) was controlled by a TEC controller (ITC4001, Thor Labs). FIG. 11B shows the optical power dependence as a function of the laser diode current. All power measurements were performed with a Si photodiode (5120C, Thor Labs) coupled with an energy meter (PM100D, Thor Labs). Laser pulses were generated with an electronic chopper, and the resulting electrical signal was captured with a digital oscilloscope.

US11629053B2. Optoelectronically-active two-dimensional indium selenide and related layered materials via surfactant-free deoxygenated co-solvent processing (2023-04-18). NORTHWESTERN UNIVERSITY [US]. Inventors: Mark C. Hersam [US], Joohoon Kang [US].
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2

Photodetector Transient Response Measurement

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The photocurrent was measured by the optical electric analyzer platform (Agilent B1500 and Thorlabs ITC4001). From the range of visible to SWIR region, four typical lasers (Thorlabs LPS series) with wavelengths of 637, 1060, 1310, and 1550 nm were used. The transient responses of the photodetectors were also measured by the optical electric analyzer platform and dual-channel picoammeter voltage source (Keithley 6482), and the on and off times of the laser were controlled by a mechanical shutter.
Zhou W., Zheng L., Ning Z., Cheng X., Wang F., Xu K., Xu R., Liu Z., Luo M., Hu W., Guo H., Zhou W, & Yu Y. (2021). Silicon: quantum dot photovoltage triodes. Nature Communications, 12, 6696.
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3

Characterization of Optoelectronic Sensor Array

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The materials and devices were characterized using an optical microscope (Nikon Eclipse LV100ND), an SEM (FEI Nova NanoSEM430, acceleration voltage of 1 kV), an AFM (Bruker Dimension Icon), and a UV–Vis–NIR spectroscope (Varian Cary 5000). The electrical and optoelectronic performances were measured using a semiconductor analyzer (Agilent B1500A), a probe station (Cascade M150), an input signal generator (Tektronix AFG 3022C), an oscilloscope (Tektronix MSO 2024B), and a laser diode controller (Thorlabs ITC4001, using laser excitations of 405 and 516 nm) in a dark room at room temperature. The noise was measured by a noise measurement system (PDA NC300L, 100 kHz bandwidth). With the help of special mask to avoid crosstalk issues (Supplementary Fig. 30), the electrical performance of the 1024 phototransistors in the optoelectronic sensor array was automatically measured using a home-built transistor array test system (Agilent B1500A and Keysight 34980A) controlled by a self-developed program, and the data analysis and image processing were carried out using MATLAB (Supplementary Figs. 31–33).
Zhu Q.B., Li B., Yang D.D., Liu C., Feng S., Chen M.L., Sun Y., Tian Y.N., Su X., Wang X.M., Qiu S., Li Q.W., Li X.M., Zeng H.B., Cheng H.M, & Sun D.M. (2021). A flexible ultrasensitive optoelectronic sensor array for neuromorphic vision systems. Nature Communications, 12, 1798.
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4

Fabrication and Characterization of Photodetectors

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All the photodetectors were fabricated on the (001) surface of the single crystals. The 405 nm laser was generated from light‐emitting diodes (THORLABS, ITC4001). CPL was generated by employing a linear polarizer (THORLABS, CRM1L) and quarter‐wave plate (THORLABS, WPQ10ME‐405). The 800 nm laser was generated by the femtosecond laser system. CPL was obtained by a linear polarizer (Thorlabs) and a quarter‐wave plate (Thorlabs). The current signals were collected using a Keithel 6517B electrometer.
CCDC 2181083, 2181070, and 2181138 contains the supplementary crystallographic data for this paper. These data can be obtained free of charge from The Cambridge Crystallographic Data Centre via www.ccdc.cam.ac.uk/data_request/cif.
Wu W., Shang X., Xu Z., Ye H., Yao Y., Chen X., Hong M., Luo J, & Li L. (2023). Toward Efficient Two‐Photon Circularly Polarized Light Detection through Cooperative Strategies in Chiral Quasi‐2D Perovskites. Advanced Science, 10(9), 2206070.
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5

Comprehensive Characterization of Optoelectronic Devices

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The materials and devices were characterized using an optical microscope (Nikon ECLIPSE LV100ND), aberration-corrected TEM (Thermo ScientificTM, Titan Cube Themis G2), with the operating voltage at 300 kV and Super-X detector system for Energy-Dispersive X-ray spectrometry (EDX) mappings, and an X-ray photoelectron spectroscopy analyser (Thermo VG Scientific ESCALAB250). The electrical and optoelectronic performance was measured using a semiconductor analyser (Agilent B1500A), a probe station (Cascade M150) and a laser diode controller (Thorlabs ITC4001, with laser excitations of 405 and 638 nm) in a dark room at room temperature; 405 nm of light was generated using a Thorlabs ITC4001 unit, and a current amplifier (Model SR570) and an oscilloscope (Tektronix MDO3102) were used to provide a gate voltage to characterize the programming and erasing performance. The noise was measured using a noise-measurement system (Fs Pro, 100 kHz bandwidth).
Feng S., Han R., Zhang L., Liu C., Li B., Zhu H., Zhu Q., Chen W., Cheng H.M, & Sun D.M. (2022). A photon-controlled diode with a new signal-processing behavior. National Science Review, 9(8), nwac088.
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6

Photoluminescence Characterization of Phosphors

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The PL excitation spectra were recorded using a spectrometer (Varian Carry 50) in the 600–250 nm range, monitored at 650 nm for Ca1-xS:Eux2+ 614 nm for Sr1-xS:Eux2+ and 514 nm for the SAED phosphors. The phosphors were placed in 1 mm quartz cuvettes during the measurement. The PL emission was recorded using a spectrometer (CCS200, Thorlabs) coupled with an optical fiber of 1 mm diameter (FP100URT, Thorlabs) after 450 nm LED excitation. To calculate the PLQY, an optical setup with a spectrometer (AvaSpec-HS2048XL, Avantes) coupled with an optical fiber (FP100URT, Thorlabs) to an integrating sphere (15 cm diameter, Lab sphere) was used. A 450 nm LED, controlled with a benchtop diode controller (ITC4001, Thorlabs) was used as the excitation source and was directed towards the sample in quartz cuvettes inside the integrating sphere where several measurements as described by de Mello et al. method were taken44 (link). Measurements of the empty sphere, direct and indirect excitation spectra, direct and indirect PL emission spectra, and black background were recorded, from which the PLQY was calculated.
Katumo N., Li K., Richards B.S, & Howard I.A. (2022). Dual-color dynamic anti-counterfeiting labels with persistent emission after visible excitation allowing smartphone authentication. Scientific Reports, 12, 2100.
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7

Characterization of Artificial Photonic Synapses

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The optical images of simples were obtained by using a polarizing microscope (ZEISS, Axio Scope A1). The SEM study was characterized by a ZEISS Sigma HD instrument. The morphology of the devices was confirmed by an atomic force microscopy (AFM, Bruker Dimension Icon) in a tapping mode. Photoluminescence and Raman measurements were performed by using a confocal μ-PL system (WITec, alpha-300) with a 488 nm laser excitation source. All the electrical properties of the artificial photonic synapses were characterized in high vacuum (10−4 Pa) with an Agilent-B1500 semiconductor parameter analyzer and a Lakeshore probe station at room temperature. The light illumination was applied by a 450 nm laser and controlled by a laser controller (Thorlabs, ITC4001). The optical power was measured with Thorlabs’ Optical Power Meter.
Zhu C., Liu H., Wang W., Xiang L., Jiang J., Shuai Q., Yang X., Zhang T., Zheng B., Wang H., Li D, & Pan A. (2022). Optical synaptic devices with ultra-low power consumption for neuromorphic computing. Light, Science & Applications, 11, 337.
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