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Dual beam fib sem

Manufactured by Thermo Fisher Scientific
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The Dual Beam FIB/SEM is a scientific instrument that combines a Focused Ion Beam (FIB) and a Scanning Electron Microscope (SEM) in a single system. It allows for high-resolution imaging and precise sample preparation through ion beam milling and deposition.

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9 protocols using dual beam fib sem

1

Structural Characterization of Samples

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RSMs of these samples were taken around the asymmetric (−105) plane, using a Bruker AXS D8 Discover HRXRD. The TEM-ready samples were prepared using the in situ FIB lift out technique on an FEI Dual Beam FIB/SEM. Structural characterizations were realized by a FEI Tecnai Osiris TF-20 FEG/TEM equipped with EDS.
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2

Cross-Sectional TEM Analysis of Indents

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In order to observe the deformation process beneath the indenter tip, as well as the shear plasticity, a bright field cross sectional transmission electron microscopy (XTEM) images are carried out on selected indents using FEI Tecnai TF-20 FEG/TEM operated at 200 kV in bright-field (BF). The TEM-ready sample was prepared using the in-situ FIB lift out technique on a FEI Dual Beam FIB/SEM. The sample was capped with sputtered C and e-Pt/I-Pt prior to milling to protect the surface of the area of interest.
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3

Ultrastructural Analysis of Cells

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For ultrastructural analysis, cells were plated in a Chamber Slide™ system and fixed in 0.5% glutaraldehyde and 2% paraformaldehyde, 0.1 M cacodylate buffer, pH 7.4 for 1 h, then post fixed in 1% osmium tetroxide in the same buffer for 45 min, in the dark. Samples were washed for 30 min and contrasted en bloc with 1% uranyl acetate in the dark, then gradually dehydrated in ethanol. All the steps of the above procedure were performed at 4°C. Cells were infiltrated with a mixture of ethanol and Epoxy Embedding Medium (Sigma-Aldrich™, Cat# 45359-1EA-F), then embedded in the same resin, allowing specimens to polymerize at 60°C, for 3 days. Resin-embedded cells were mounted on stubs using a self-adhesive carbon disk and gold sputtered by an Emithech K550. Regions of interest were cross-sectioned by the focused gallium ion beam of the Dualbeam FIB/SEM (Helios Nanolab, FEI, Hillsboro, OR, USA). Images of cross sections were acquired at a working distance of 2 mm using backscattered electrons and a through-the-lens detector in immersion mode with an operating voltage of 2 kV and an applied current of 0.17 Na. Images were composed in an Adobe Photoshop CS6 format.
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4

Structural Characterization of Nanomaterials

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For structural characterization, high-resolution X-ray scattering measurements (Grazing Incidence X-ray diffraction and X-ray reflection) were conducted using in-house X-ray diffraction (Smartlab XRD, Rigaku). Transmission electron microscopy (TEM)-ready samples were prepared using the in-situ FIB lift-out technique on an FEI Dual Beam FIB/SEM. The samples were capped with sputtered Ir and e-Pt/I-Pt prior to milling. The TEM lamella thickness was ~100 nm. The samples were imaged with a FEI Tecnai TF-20 FEG/TEM operated at 200 kV in bright-field (BF) TEM mode, high-resolution (HR) TEM mode, and high-angle annular dark-field (HAADF) STEM mode. The STEM probe size was 1-2 nm nominal diameter.
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5

Cross-Sectional TEM Imaging of Indents

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In order to observe the deformation process beneath the indenter tip, a bright field cross sectional transmission electron microscopy (XTEM) images of selected indents are carried out using FEI Tecnai TF-20 FEG/TEM operated at 200 kV in bright-field (BF). A TEM-ready sample was prepared using an in-situ FIB lift out technique using FEI Dual Beam FIB/SEM. The sample was capped with sputtered carbon (C) and e-Pt/I-Pt prior to milling to protect the surface of the area of interest.
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6

Vitrification and FIB Milling of Chlamydomonas Cells

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 We used Chlamydomonas reinhardtii mat3-4 cells (strain CC-3994)87 (link), which exhibit superior vitrification due to their small size. The strain was acquired from the Chlamydomonas Resource Center, University of Minnesota, St. Paul. Cells were grown until the mid-log phase in Tris-acetate-phosphate (TAP) medium under constant light exposure and bubbling with a normal atmosphere. Vitrification and FIB milling were performed as previously described88 (link),89 . Using a Vitrobot Mark 4 (FEI), cells in suspension (4 μl of ∼1000 cells per µl) were blotted onto R2/1 carbon-coated 200-mesh copper grids (Quantifoil Micro Tools) and plunge frozen in a liquid ethane/propane mixture. Grids were then mounted into Autogrid supports (FEI) and transferred into either a FEI Scios or FEI Quanta dual-beam FIB/SEM instrument. The grids were coated with an organometallic platinum layer by the gas injection system (FEI), and cells were thinned from both sides with a gallium ion beam to a final thickness of ∼100–200 nm.
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7

Fabrication and Analysis of CNT Arrays

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CNT arrays were prepared via FESA on SiO2 (90 nm)/Si substrates. The cross section was prepared using the in situ focused ion beam (FIB) lift-out technique on an FEI Dual Beam FIB/SEM. The sample was capped with Ir and ePt/IPt before prep and imaged with a FEI Tecnai TF-20 field emission gun/TEM operated at 200 kV in bright-field and high-resolution TEM mode (Evans Analytical Group).
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8

Nanoscale Characterization of Ferroelectric Thin Films

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TEM-ready sample is prepared using the in situ focused ion beam (FIB) lift out technique on an FEI Dual Beam FIB/SEM. The sample is capped with sputtered C and e-Pt/I-Pt prior to milling. The TEM lamella is ~100 nm. The sample is imaged by an FEI Tecnai TF-20 FEG/TEM at 200 kV in bright-field (BF) STEM mode and HAADF-STEM mode. The STEM probe size is 1–2 nm in nominal diameter. EDS mappings are acquired on an Oxford INCA Bruker Quantax EDS system. The PFM images is measured by an Bruker Multimode 8 equipment. The PFM tip is applied with a bias of −10 V to scan a square region. At the center of the scanned region, a bias of +10 V is applied to scan a square region, causing different regions to undergo different polarization inversion process. A Bruck D8 discover HRXRD is employed to estimate the Al/Sc ratio and epilayer crystal quality. The IV and IT curves are recorded by a PDA FS-Pro 380 semiconductor analyzer. During the IV and IT measurements, the maximum current is limited to 10−3 A to protect the device. The UV light is provided by a commercial UV LED with a peak wavelength of 355 nm. The LED is driven by a DH1766 DC Power Supply.
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9

TEM Characterization of FIB-Prepared Samples

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The TEM-ready samples were prepared using the in-situ FIB lift out technique on a FEI Dual Beam FIB/SEM. The samples were capped with sputtered C and e-Pt/I-Pt prior to milling. The TEM lamella thickness was ~100 nm. The samples were imaged with a FEI Tecnai TF-20 FEG/TEM operated at 200 kV in bright-field (BF) TEM mode, high-resolution (HR) TEM mode, and high-angle annular dark-field (HAADF) STEM mode. The STEM probe size was 1–2 nm nominal diameter. EDS spectra were acquired on Oxford INCA, Bruker Quantax EDS system.
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