D max 2500 pc

The CH₃NH₃PbI₃ microribbons grown on substrates were directly characterized with a cold field emission scanning electron microscope (Hitachi S4800, operated at 2.0 kV, 10 μA) and an X-ray diffractometer (D/MAX-PC 2500, Rigaku, with Cu Ka radiation at λ = 0.154 nm). A Bruker D8 Discover diffractometer with a general area detector diffraction system (GADDS) as a 2D detector was applied for 2D wide angle X-ray diffraction (WAXD) measurements. The calibration was done with silicon powder and silver benzoate. The TEM specimen was prepared by rubbing the grid with the microribbon arrays. The high-resolution TEM characterization was carried out on a FEI Tecnai G2 T20 microscope. A Dimension Icon SPM (Bruker, Santa Barbara, CA, USA) was used to perform the AFM topographic measurements of the CH₃NH₃PbI₃ arrays. The photo response performance of the devices was studied under ambient conditions using a tungsten lamp with a power density ranging from 0 to 15 mW/cm².

The crystal structures of the perovskite thin films were characterized using an X‐ray diffractometer (D/MAX‐PC 2500, Rigaku). A Lambda 35 UV spectrometer (Perkin Elmer) was used to obtain the UV absorption spectra of the samples. The test samples were prepared on a glass. The static PL and time‐resolved PL spectra of the perovskite thin films on FTO substrates were measured using an Edinburgh FLS 980 under the irradiation of a 405 nm pulse laser.

The morphology of the obtained porous carbons was characterized by scanning electron microscopy (SEM, JEOL JSM-6610LV and JEOL S-4800) operated at an acceleration voltage of 10 kV. Transmission electron microscopy (TEM) images were obtained using a JEOL JEM-1011 microscope operating at 200 kV. High-resolution TEM (HRTEM) was performed using a JEM-2100 F microscope operating at an accelerating voltage of 200 kV. The crystallographic information of porous carbons was investigated by powder X-ray diffraction (XRD, Rigaku D/Max 2500PC). Raman spectra were collected on a Renishaw inVia Raman spectrometer. X-ray photoelectron spectroscopy (XPS) was performed on a 1063 photoelectron spectrometer (Thermo Fisher Scientific, England) with Al-Kα X-ray radiation as the X-ray source for excitation. The textural properties were characterized by N₂ sorption measurements at 77.3 K (Micromeritics TriStar II 3020). The specific surface area was obtained by Brunauer-Emmett-Teller (BET) method. The pore size distribution (PSD) was calculated by the nonlocal density functional theory (NLDFT) method. The total pore volume (V_total) was estimated from the adsorbed amount at a relative pressure p/p° of 0.99. Micropore volume (V_mic) was calculated using the t-plot method.

To adjust the film thickness, Alpha-step IQ surface profiler was used to measure the step height during the deposition, and the final device thickness was determined by transmission electron microscopy (TEM) measurements. The density of a-Si (pristine) and a-Si (densified) films were characterised by X-ray reflectometry measurement (ATX-G, Rigaku, operated at 40 kV, 250 mA), and the spectra were collected using Cu K_α x-ray source (λ = 1.54 Å) with a scan range of 0–6 degrees in 2θ. X-ray photoelectron spectra (Nexsa, ThermoFisher Scientific) on Ti, Ti-Si, and Ag-Ti-Si films were measured using a micro-focus monochromatic Al K_α X-ray source (hν = 1486.6 eV). The Ti-Si and Ag-Ti-Si films were deposited in the same procedure with the device fabrication, including the post RTA process at 350 °C for 5 min in the Ar atmosphere. The amorphous phase of a-Si (densified) and Ti_4.8%:a-Si films were characterised by X-ray diffraction measurement (Dmax2500-PC, Rigaku, operated at 40 kV, 200 mA) using glancing incident scan mode with a scan range of 1 degree and a scan speed of 2 degree/min.

The block samples were cut along the building direction Z-axis using a wire electric discharge machine, 2 mm away from the base, and subsequently embedded for microstructural investigation and nanoindentation tests on the X-Y plane. The cross-sectioned samples were consecutively ground by #100, #600, #800, #1200, #1500, and #2000 grade silicon carbide papers to remove any surface oxides. Then ground samples were consecutively polished with 5 μm, 3 μm, 2 μm, 1 μm, and 0.5 μm grade diamond abrasive paste. Phase constituents were examined by X-ray diffraction (XRD, D/MAX-2500/PC; Rigaku Corp., Tokyo, Japan) with Mo Kα radiation. The angle range of 15–45° and a step size of 0.01° was adopted during the XRD test. More details can be seen in our previous research [36 (link)].