Racemic benoxacor (Rac-benoxacor; CAS: 98730-04-2; 98% purity) was purchased from Aladdin Reagent Co., Ltd. (Shanghai, China). Benoxacor stock solution was prepared with methanol and stored at 4 °C. The HPLC-grade solvents included ACN, ETOH, MEOH, HEX, and IPA, which were purchased from Honeywell Research Chemicals (Charlotte, NC, USA). Water was generated by a Milli-Q system (Billerica, MA, USA). All other regents were of analytical grade and were purchased commercially.
Ingenuity pathway analysis (ipa)
Manufactured by Honeywell
Sourced in United States, Germany
IPA is a laboratory equipment product manufactured by Honeywell. It is an isopropyl alcohol solution designed for use in various scientific and industrial applications. IPA is a versatile solvent and cleaning agent that can be used for tasks such as equipment cleaning, surface degreasing, and sample preparation. The product's core function is to provide a reliable and high-purity solvent for laboratory and industrial settings.
Automatically generated - may contain errors
Lab products found in correlation
4 protocols using ingenuity pathway analysis (ipa)
1
Racemic Benoxacor: Preparation and Characterization
2
Transfer of CVD-Grown MoS2 Film
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A polystyrene (PS) solution was prepared by dissolving 0.9 g of
PS powder (Sigma-Aldrich, M.W. ∼280 kmol/g) in 10 mL of toluene
(Sigma-Aldrich, ≥99.0%) and stirring at room temperature (RT)
for 30 min. The PS solution was then spin-coated on a 1 cm2 sample of CVD-grown MoS2 film on SiO2(300
nm)/Si, at 3500 rpm for 60 s, followed by a soft bake at 80 °C
for 15 min in air. Again, the film was transferred by etching the
underlying SiO2 using the KOH procedure above. After transfer,
the assembly was heated on a hot plate at 80 °C for 1 h followed
by 30 min at 150 °C, to dry the film and remove wrinkles. The
PS was then removed by immersing the sample in toluene for 30 min,
which was repeated twice before rinsing (IPA, Honeywell, ≥99.5%)
and dried under N2.
PS powder (Sigma-Aldrich, M.W. ∼280 kmol/g) in 10 mL of toluene
(Sigma-Aldrich, ≥99.0%) and stirring at room temperature (RT)
for 30 min. The PS solution was then spin-coated on a 1 cm2 sample of CVD-grown MoS2 film on SiO2(300
nm)/Si, at 3500 rpm for 60 s, followed by a soft bake at 80 °C
for 15 min in air. Again, the film was transferred by etching the
underlying SiO2 using the KOH procedure above. After transfer,
the assembly was heated on a hot plate at 80 °C for 1 h followed
by 30 min at 150 °C, to dry the film and remove wrinkles. The
PS was then removed by immersing the sample in toluene for 30 min,
which was repeated twice before rinsing (IPA, Honeywell, ≥99.5%)
and dried under N2.
3
Transferring CVD-Grown MoS2 via PMMA
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For transfer, PMMA solution
(7-fold dilution, AR-PC-504 in AR 600–01, Allresist) was spin-coated
on a 1 cm2 sample of CVD-grown MoS2 film on
SiO2(300 nm)/Si at 500 rpm for 10 s, followed by 4500 rpm
for 60 s followed by a soft bake at 120 °C for 15 min in air.
The underlying SiO2 was then etched in 50 mL of KOH solution
(2 M in deionized (DI) water, VWR Chemicals, 85.0–100.5% AnalaR
NORMAPUR Reag. Ph. Eur.). The detached film was then transferred to
DI water (18 MΩcm) with a glass slide and allowed to soak for
30 min. This wash was repeated once after which the film was transferred
onto a SiO2(300 nm)/Si substrate and left to dry in air
for ∼15 min, then placed in a desiccator at 0.8 bar overnight.
Following drying the sample was immersed in 30 mL acetone (Honeywell,
≥99.5%) for 30 min to dissolve the PMMA layer, which was repeated
twice before rinsing (IPA, Honeywell, ≥99.5%) and drying under
N2.
(7-fold dilution, AR-PC-504 in AR 600–01, Allresist) was spin-coated
on a 1 cm2 sample of CVD-grown MoS2 film on
SiO2(300 nm)/Si at 500 rpm for 10 s, followed by 4500 rpm
for 60 s followed by a soft bake at 120 °C for 15 min in air.
The underlying SiO2 was then etched in 50 mL of KOH solution
(2 M in deionized (DI) water, VWR Chemicals, 85.0–100.5% AnalaR
NORMAPUR Reag. Ph. Eur.). The detached film was then transferred to
DI water (18 MΩcm) with a glass slide and allowed to soak for
30 min. This wash was repeated once after which the film was transferred
onto a SiO2(300 nm)/Si substrate and left to dry in air
for ∼15 min, then placed in a desiccator at 0.8 bar overnight.
Following drying the sample was immersed in 30 mL acetone (Honeywell,
≥99.5%) for 30 min to dissolve the PMMA layer, which was repeated
twice before rinsing (IPA, Honeywell, ≥99.5%) and drying under
N2.
4
Synthesis of Functionalized TiO2 Nanocomposites
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TiO2 P25 Aeroxide (Evonik, Essen, Germany) was suspended in a mixture of hexamethyldisiloxane (HMDSO, ≥98% Sigma Aldrich, Darmstadt, Germany) and isopropyl alcohol (IPA, Honeywell, ≥99.8% Charlotte, NC, USA) (10/90 v/v) at a concentration of 10 mg/mL. Reduced graphene oxide (highly porous rGO, Graphene Supermarket, New York, NY, USA) and fullerene C60 (99.4%, Italy Nanocage S.R.L.) were individually dispersed at a concentration of 1 mg/mL in distilled deionized water. The suspensions were sonicated in an ultrasonic bath (CEIA, mod. CP102) for 1 h.
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