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Dektak 150 surface profiler

Manufactured by Veeco
Sourced in United States

The Dektak 150 is a surface profiler designed to measure surface topography, roughness, and step heights. It utilizes a high-resolution mechanical stylus to generate 2D and 3D profiles of sample surfaces. The Dektak 150 provides accurate and repeatable measurements with a wide range of vertical measurement capabilities.

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14 protocols using dektak 150 surface profiler

1

Structural and Mechanical Properties of NbB2

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By using a D8‐tools Bragg‐Brentano diffractometer with a Cu‐Kα line (λ = 1.54056 Å), X‐ray diffraction (XRD) in the θ–2θ mode was conducted and the structural properties (such as interplanar spacing, crystal orientation, and grain size) of NbB2 were measured. The microstructure was obtained by HRTEM using a field‐emission JEOL 2010F microscope operated at 200 kV; the sheet specimen for the HRTEM measurement was prepared by mechanically scratching the NbB2 surface with a clean stainless‐steel blade. Analyses of composition and chemical states were carried out via PerkinElmer PHI‐5702 XPS; before measurement, 15 min Ar+ etching (1 keV etching energy) was carried out to remove any surface contaminants. Subsequently, the sectional measurements of NbB2 were conducted via SU 8010 scanning electron microscope (SEM) to explore the film growth condition. The corresponding surface morphology and root‐mean‐square roughness (Rq) were obtained from using an atomic force microscope (AFM, Dimension Icon, Veeco Instruments, Bruker, Germany). The thickness of film was measured by Veeco Dektak 150 surface profiler. In addition, to determine the hardness and elasticity modulus of NbB2, nanoindentation measurement was performed with a penetration depth of 500 nm by MTS Nanoindenter XP with a 3‐side pyramidal Berkovich‐type diamond indenter.
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2

Fabrication of PDMS Microfluidic Devices

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Silicon masters were made from 2-inch silicon wafers (Siegert Wafer, Germany) using photo-lithography with an SU8-2025 photoresist (Micro resist Technology) with photomasks (Zitzmann GmbH, 64.000 dpi) designed with AutoCAD. Master wafers were produced in a clean room following manufacturer’s instructions for the desired resist thickness which was measured by a profilometer (Dektak 150 surface profiler, Veeco Instruments). Microfluidic devices were then produced using PDMS soft lithogrpahy. 12 g of PDMS (Sylgard 184, Dow Corning), mixed thoroughly with 1.2 g of its curing agent was poured on a silicon master wrapped in aluminium fold, degassed for 30 min and baked for 1 h at 80°C. Cured PDMS devices were carefully peeled from the master, trimmed with a razor blade and inlet and outlet holes were punched into each device with a biopsy puncher. Glass slides were cleaned thoroughly with 2% Hellmanex III (Hellma) and distilled water then dried for 30 min at 80°C. PDMS devices and glass slides were exposed to O2 plasma (1 min, 20 sccm, 100 W) bonded together and baked for 1 h at 80°C.
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3

Fabrication of TiO2-Au Janus Micromotors

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TiO2 microspheres were prepared using a previously reported solvent extraction/evaporation method [43 (link)]. Firstly, titanium butoxide (1.0 mL, Sigma #244112) was dissolved in ethanol (40 mL), and the resulting solution stirred for 3 min. After this time, the solution was incubated at room temperature for 3 h. The resulting TiO2 microspheres were then collected by centrifugation at 8000 rpm for 5 min and washed three times with ethanol (Guangzhou Chemical Reagent Co.) and ultrapure water (18.2 MΩ cm), prior to drying in air at room temperature. The TiO2 microspheres were then annealed at 400 °C for 2 h to obtain anatase TiO2 microspheres (1.0 μm mean diameter), which were then employed as base particles for the TiO2–Au light-driven Janus micromotors. After dispersion of the TiO2 particles (1.0 mg) in ethanol (2.0 mL), the resulting suspension was dropped onto glass slides and dried uniformly at ambient temperature to give particle monolayers. These particles were then partially covered with a thin gold layer by 3 cycles of 60 s ion sputtering (Q150T Turbo-pumped ES sputter coater/carbon coater, Quorum). The resulting metal layer thickness is 40 nm, as measured by a Dektak 150 Surface Profiler (Veeco). Finally, the desired TiO2–Au Janus micromotors were obtained following sonication of the glass slide in deionized water for 5 s.
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4

Fabrication of Au-Ni-TiO2 Janus Micromotors

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For the Au–Ni–TiO2 magnetic Janus micromotors, the TiO2 particle monolayers were prepared according to the above method. The particles were then sputter-coated with a thin nickel layer over 60 s using a Q150T Turbo-pumped ES sputter coater/carbon coater (Quorum). The nickel layer thickness is 10 nm, as measured by a Dektak 150 Surface Profiler (Veeco). The particles were subsequently sputter-coated with a layer of gold (40 nm) over 3 cycles of 60 s.
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5

Unintentionally Doped GaN Layer Growth

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Unintentionally doped GaN layers, 7–24 μm-thick, were grown by HVPE on c-plane sapphire substrates. The concentration of free electrons in these samples is about 1 × 1017 cm−3 at room temperature, as determined from the temperature-dependent Hall effect and time-resolved PL measurements17 (link). One GaN sample (MD42) from Institut für Physik, Magdeburg, Germany4 (link), was grown on sapphire by MOCVD and doped with Si and C. The partial etching of GaN was carried out in a Samco inductively coupled plasma (ICP) etching system (model: RIE-101 iPH) with photoresist spr955 serving as a mask. The etching rate was about 40 nm/min under a gas mixture condition of Cl2/SiCl4/Ar = 30/5/18 sccm, with the ICP source power and bias power set to 80/30 W and chamber pressure of 0.6 Pa. The etching depth was confirmed by the Veeco Dektak 150 surface profiler.
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6

Optical Simulations of ST-PeSC Devices

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Optical simulations of transmittance of ST‐PeSCs were based on the transfer matrix method implemented in Matlab.[4, 21] This derived the optical properties of multilayer device stacks based on the refractive indexes and thicknesses of the layers comprising the device, using (n,k) spectra for the individual layers extracted from literature as calculation inputs.[4, 34] The layer thicknesses in the stack were determined by measurements with a Dektak 150 surface profiler (Veeco, USA). PCE values were calculated based on 90% of the Voc in the S–Q limit and assume a value of 100% for the IQE (internal quantum efficiency). FF was fixed at 80% throughout for the purpose of calculating PCE.
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7

Fabrication and Characterization of Organic Devices

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ITO glasses (sheet resistance of 20 Ω square−1) were pre-cleaned with a surfactant scrub followed by successive cleaning with deionized water, acetone, and isopropanol. After oxygen plasma cleaning for 5 min, ITO glasses were immediately transferred to the evaporation chamber and pumping vacuum. The organic was evaporingested under a pressure of around 2.6 × 10−6 Torr at a rate of 0.5 Å s−1, which is different from LiF (0.2 Å s−1) and Al (10 Å s−1). The active area, where the cathode overlaps with the anode, was 2 × 2.5 mm2. The thickness of the organic layers was monitored by a quartz crystal thickness/ratio monitor and was calibrated by the Dektak150 surface profiler (Veeco). The electrical characteristics and optical properties of devices were measured on a Keithley 2400 SourceMeter and PR655 spectrometer, respectively. The devices were not packaged, and the characterization processes were conducted under laboratory air conditions.
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8

Fabrication of SU8 Photoresist Micropatterns

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SU8 5 photoresist from Microchem was spin coated over pre-cleaned Si substrates at 500 rpm for 10 s followed by 1000 rpm for 20 s. Samples were then prebaked at 65 °C for 2 min followed by softbaking at 95 °C for 5 min. Subsequently the samples were exposed to UV light (Karl Suss MA6 Mask Aligner) through the chrome mask (Mask 1) containing the ridge patterns for 12 s. Post exposure baking was done at 65 °C for 1 min and at 95 °C for 2 min, followed by developing using a developer solution for 40 s and rinsing in IPA (iso-propyl alcohol) for 30 s. The resulting SU8 pattern contained rectangular wells of depth 15 ± 2μm as measured using a surface profiler (Dektak 150 Surface Profiler, Veeco Instruments, Inc.) and were used as master template to obtain PDMS ridges through soft lithography.
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9

Characterization of Buckle Patterns in Pre-stretched PDMS

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Buckle wavelength (λb) and amplitude (Ab) was measured for an unstrained ridge/planar PDMS surface using an AFM (MultiMode 8 Scanner with NanoScope V Controlller). Scanning was performed in tapping mode using RTESP - 300 tip (Bruker AFM Probes) having a force constant of 40 N/m at a resonance frequency of 300 kHz. Images were scanned at 256 × 256 pixels for a scan area of 50 μm × 50 μm over the PDMS surface. For an initial pre-stretched ridge PDMS, large buckle wavelength and amplitude formed after release was scanned for both 2D line profile as well as 3D surface profile using a surface profiler (Dektak 150 Surface Profiler, Veeco Instruments, Inc.) with stylus tip of diameter 2.5 μm and applied force of 0.5 mg having a scan resolution of 0.056 μm/sample.
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10

Multimodal Characterization of Nanostructures

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Scanning electron microscopy (SEM) equipped with Raith 150 TWO electron beam lithography system (Raith GmbH, Germany) was used for SEM imaging. Transmission electron microscope imaging was carried out on a FEI Tecnai G2 TEM system. Surface profiling was performed on a Veeco DEKTAK 150 surface profiler. Dark-field optical microscope image was taken on an Olympus BX51 optical microscopy. An Oxford PlasmaLab 100 system was utilized for the cleaning and etching of nanopore chips.
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