UV-vis spectra were obtained using a PerkinElmer Lambda 10 spectrophotometer. STEM images were obtained using the JEOL JEM 2200FS+CS microscope. The BSE images were obtained using either the HITACHI SU3500 electron microscope equipped with XMaxN 50 SDD EDS for the elemental analysis or the JEOL JSM 7401F. The photoluminescence (PL) characterization was conducted using a Horiba Jobin-Yvon (FL-1005) spectrometer equipped with a 450 W Xe lamp. The PL emission spectra were obtained using 394 nm as excitation wavelength, and the PL excitation spectra were recorded by monitoring the 614 nm emission band. The (x,y) chromaticity coordinates were calculated from the PL emission spectra of the samples according to The Commission International de I'Eclairage (CIE system of colorimetry 1931).27
Jem 2200fs cs microscope
Manufactured by JEOL
The JEM 2200FS+CS is a high-performance transmission electron microscope (TEM) designed for advanced materials analysis. It features a field emission gun (FEG) source and a spherical aberration (Cs) corrector, providing high-resolution imaging and analytical capabilities. The microscope is capable of operating at accelerating voltages up to 200 kV and offers a range of imaging and analytical modes to investigate the structure and composition of a variety of samples.
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Lab products found in correlation
2 protocols using jem 2200fs cs microscope
1
Comprehensive Optical Characterization of Materials
2
Characterization of CaMgSi Powders
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Powder XRD patterns
of CaMgSi powders were acquired with a PANalytical X’Pert Pro
diffractometer equipped with a monochromator and a radiation source
of Cu Kα1 (λ1 = 1.54056 Å) operating at
40 kV/30 mA. Diffraction patterns were acquired in the 2θ range
of 25–80° with a step size of 0.02°. Rietveld refinement
was performed using FullProf software, and the crystal structure was
generated with the VESTA software.38 (link)−40 (link) TEM micrographs were
obtained with a JEOL JEM2200FS +CS microscope at an accelerating voltage
of 200 kV. The Miller indices’ identification on the SAED patterns
was made with the Crystallographic Tool Box (CrysTBox) software using
the z.41 (link) The experimental TE measurements
were taken with a ZEM-1 Ulvac Sinku-Riko equipment.
of CaMgSi powders were acquired with a PANalytical X’Pert Pro
diffractometer equipped with a monochromator and a radiation source
of Cu Kα1 (λ1 = 1.54056 Å) operating at
40 kV/30 mA. Diffraction patterns were acquired in the 2θ range
of 25–80° with a step size of 0.02°. Rietveld refinement
was performed using FullProf software, and the crystal structure was
generated with the VESTA software.38 (link)−40 (link) TEM micrographs were
obtained with a JEOL JEM2200FS +CS microscope at an accelerating voltage
of 200 kV. The Miller indices’ identification on the SAED patterns
was made with the Crystallographic Tool Box (CrysTBox) software using
the z.41 (link) The experimental TE measurements
were taken with a ZEM-1 Ulvac Sinku-Riko equipment.
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