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Ppp nch

Manufactured by Nanosensors
Sourced in Switzerland

The PPP-NCH is a non-contact high-frequency scanning probe microscope cantilever. It is designed for high-resolution imaging and analysis of surface topography and material properties at the nanoscale.

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5 protocols using ppp nch

1

Atomic Force Microscopy Characterization of Ni3B Nanoparticles and Phages

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Ni3B nanoparticles, phages and compounds of phages with Ni3B were characterised with an atomic force microscope (AFM). The measurements were carried out on a Dimension Icon AFM with a Nanoscope V controller (Bruker, Santa Barbara, California) in ambient conditions. The measurements were performed in tapping mode, to minimise the lateral interaction. Silicon cantilevers (PPP NCH, Nanosensors) with a nominal resonance frequency of 330 kHz, spring constant of 42 Nm-1, and a nominal tip diameter of less than 10 nm were used. All images were taken at a resolution of 512 × 512 pixel2. M13 phages were incubated with 10 mg of amorphous and crystalline Ni3B nanoparticles at a concentration of 3 × 1012 pfu/ml in 1 ml TBS supplemented with 0.8% Tween-20. After 2 h, unbound phages were removed by washing the substrates three-times with TBS. Samples were prepared by dropping the sample suspension on a silicon wafer or freshly cleaved mica. The samples were dried in a stream of dry nitrogen. Image analysis and processing was performed with the Nanoscope Analysis software Version 1.40 (Bruker). A plane correction procedure and a line by line fit were used to compensate for the sample tilt.
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2

Atomic Force Microscopy of Surfaces

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AFM measurements were carried out in a tapping mode on the Agilent 5500 AFM (USA) and NTEGRA Prima AFM (NT-MDT, Russia) in air using standard probes PPP-NCH (Nanosensors, Switzerland) with the force constant about 42 Nm−1 and the radius of curvature 10 nm. Scan rate was 1 Hz. At least ten frames of 1÷25 μm2 were obtained in each experiment.
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3

Characterizing rGO-based FET Device

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A Hitachi S-4800 UHR FE-SEM was used to characterize the rGO-based FET device with an acceleration voltage of 2 kV. Atomic force microscopy was conducted by Agilent Technology 5420 AFM with a cantilever (Nanosensors PPP-NCH). A Keithley 4200 semiconductor analyzer was used to characterize the electrical characteristics of the FET devices. The direct current measurement was conducted by measuring the Id with Vds sweeping from −2.0 V to + 2.0 V. In the transistor measurement, Id was recorded by the analyzer with a fixed Vds (0.01 V), while Vg sweeping from −40.0 V to + 40.0 V. The dynamic response was studied by monitoring Id with a fixed Vds (0.01 V), while samples containing different concentrations of protein were drop-cast onto the device. All measurements of EGP were carried out under the ambient room temperature condition. The change of Id indicates the presence of EGP compared with the negative controls. Each group was replicated with five independent measurements to study the repeatability.
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4

Nanoscale Characterization of MoO3 using LC-AFM and FM-KPFM

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Local-conductivity AFM (LC-AFM)
and frequency-modulated KPFM (FM-KPFM) experiments were performed
with an Omicron Matrix system and a Nanonis controller (SPECS) with
bias applied to the tip during the measurement. CPD maps were obtained
simultaneously with topography noncontact-AFM (nc-AFM) images. The
probes were highly doped silicon NANOSENSORS PPP-NCH with a nominal
resonance frequency and force constant of 330 kHz and 42 N/m, respectively,
with an AFM tip radius of curvature of <10 nm when first used.
The scanning conditions were chosen to highly reduce the tip–sample
distance while maintaining the stability of measurement, and the frequency
shift setpoint near −20 Hz was used. This allows us to improve
spatial resolution of CPD and minimize topographic artifacts at MoO3 edges, which were a significant issue due to the very large
WF difference between the materials.
The contrast of a CPD map
is directly related to WF differences on the surface. The WF of MoO3 was calculated with respect to the WF of HOPG measured using
UPS (HOPG was cleaved in UHV before the measurement; see Figure 3a) according to the
following equation: ΦMoO3 = ΦHOPG + e × (CPDHOPG
CPDMoO3), where e is the elementary
charge. The KPFM images were processed using Gwyddion software.46 (link)
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5

Atomic Force Microscopy Surface Topography

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Amplitude modulation AFM (MFP-3D, Asylum Research) was used to probe the surface topography of each sample before and after photodeposition with cantilevers having a typical resonant frequency of ~ 310 kHz and spring constant of ~ 40 N/m (PPP-NCH, Nanosensors).
Complementary surface morphology images were acquired using a scanning electron microscope (SEM) (S-4300, Hitachi) with a source voltage of 10 kV.
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