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Jsm 7001fa

Manufactured by JEOL
Sourced in Japan

The JSM-7001FA is a scanning electron microscope (SEM) manufactured by JEOL. It is designed for high-resolution imaging of a wide range of materials and samples. The JSM-7001FA features a high-brightness field emission gun (FEG) electron source, providing high-quality, low-noise images. It is capable of operating at accelerating voltages up to 30 kV and offers a range of detectors for various imaging applications.

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12 protocols using jsm 7001fa

1

Characterization of Ga Microcapsules for Thermal Energy Storage

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The surface and
cross-section morphology of the Ga microcapsules at each stage were
observed using scanning electron microscopy (SEM; JEOL, JSM-7001FA),
and energy-dispersive X-ray spectroscopy (EDS) analysis was performed
to investigate the elemental distribution of the cross-section. The
cross-section of the microcapsule was prepared using a cross-section
polisher (CP, JEOL cross-section polisher). The chemical and phase
compositions of the MEPCM were determined via X-ray diffraction (XRD,
Rigaku Miniflex600, D/teX Ultra2, Cu Kα). The weight change
and temperature response during calcination were characterized using
a Mettler Toledo TG/DSC 3+ thermogravimetry (TG) device. The heat
storage capacity and phase change characteristics of the MEPCM were
measured using a differential scanning calorimetry (DSC) analyzer
(DSC-823e, Mettler Toledo) under an Ar atmosphere at a heating and
cooling rate of 1 K·min–1. The durability testing
of the MEPCM was also performed via DSC, wherein Ga-MEPCM samples
were cyclically heated and cooled from 50 to −50 °C to
simulate practical melting–solidification thermal cycles. After
durability testing, the sample was also measured via DSC and SEM/EDS
to investigate its performance.
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2

Comprehensive Substrate Characterization

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The surface morphology and elemental composition analysis of the substrates were monitored using a field emission scanning electron microscopy (FE-SEM, JEOL, JSM-7001FA). The chemical properties analysis was performed using X-ray diffraction (XRD, Rigaku, Tokyo, Japan, RINT2500HLB) with a Cu Kα line of 1.5406 Å and a scanning field of 2.5° ≦ 2θ ≦ 100°. Peak fitting was performed in referenced to JCPDS card 4-0831 and 5-0664. TEM micrographs, SAED patterns and HRTEM micrographs for the NCs were obtained using a double Cs-corrected-TEM (FEI, Titan cubed) operated at 300 kV.
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3

Freeze-Drying Preparation for SEM

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To observe the formulations by SEM, they were frozen at −80 °C and freeze-dried with Christ Alpha 2–4 LD plus freeze-dryer (Kuehner AG, Birsfelden, Switzerland). The obtained sponge-like structures were thinly cut with a scalpel and placed on stubs for the SEM. They were then coated with a 15–20 nm layer of gold and examined by SEM using a JSM-7001FA (JEOL, Tokyo, Japan) at 5.0 kV.
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4

Protein Sample Analysis via FESEM

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Protein samples (30 μg/mL) were dropped onto a silicon wafer and allowed to air-dry. Samples were observed under a field-emission-scanning electron microscopy (JSM7001FA, JEOL, Tokyo, Japan) at an acceleration voltage of 15 kV.
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5

Microstructural Characterization of Welded Joints

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The cross-sectional microstructure of the obtained joints was observed by using a JEOL JSM-7001FA scanning electron microscope (SEM) with EBSD and JEOL JEM-2100F TEM. The specimens necessary for this examination were prepared by electric discharge machining, followed by mechanical polishing with abrasive papers up to 4000 grit and final polishing with 3- and 1-μm diamond suspensions. Subsequently, EBSD specimens were subjected to electronic polishing with a solution of 40 mL HClO4 + 160 mL C2H5OH for 15 s at 20 V and 0 °C before examination. For EBSD observations, the SEM was operated at 15 kV using the TSL OIM™ software; the step size was set at 0.07 μm. TEM specimens (150 nm thick) were prepared by JEOL JIB-4500 focused ion beam (FIB) milling. Precipitate size and fraction were approximately evaluated along with dislocation density using TEM operating at 200 kV. The total length of the dislocations was calculated by Image J software and it was subsequently divided by the total volume to evaluate dislocation density.
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6

Insulin Sample Morphology Analysis

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Insulin samples (5 μM) were dropped onto a silicon wafer and allowed to air-dry. The samples were observed at an acceleration voltage of 15 kV using a field-emission scanning electron microscope (FE-SEM, JSM7001FA, JEOL, Tokyo, Japan).
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7

Comprehensive Material Characterization Techniques

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X-ray diffraction (XRD) patterns of the samples were obtained using an X-ray diffractometer (Rigaku, Miniflex) equipped with a Cu Kα source operating at 40 kV and 15 mA. The surface morphologies were observed by field emission scanning electron microscopy (FE-SEM, JSM-7001FA, JEOL). Transmission electron microscopy (TEM) and selected area electron diffraction (SAED) patterns for the crystal were obtained using a conventional transmission electron microscope (JEM-2000FX, JEOL) operated at 200 kV. The nanoparticles were characterized using an X-ray photoelectron spectroscopy (XPS, JEOL, JPS-9200), equipped with a monochromatic Al Kα X-ray source (1486.6 eV). The analyzed area of the samples was 3 mm × 3 mm (large scale). The peak positions and areas were optimized by a weighted least-squares fitting method using 70% Gaussian and 30% Lorentzian line shapes. All XPS spectra were calibrated to the C (1 s) core level peak at 286.0 eV.
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8

Thermal Characterization of Material Composition

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Sample morphology was evaluated by SEM (JEOL, JSM-7400F) and transmission electron microscopy (TEM, JEOL JEM-2010F). Sample element distribution after heat-oxidation treatments were observed by energy dispersive spectroscopy (EDS, JEOL, JSM-7001FA). Phase compositions were characterized by powder X-ray diffraction (XRD, Rigaku Miniflex, Cu Ka). The particle size distribution was measured by a particle size distribution analyzer (HORIBA, LA-950) based on Mie scattering theory. The Melting point, freezing point, and latent heat were measured using a combined thermogravimetry (TG) and differential scanning calorimetry (DSC) analyzer (TGA/DSC1, METTLER TOLEDO). Samples were subjected to a heating rate and cooling of 2 K min−1 in an Ar atmosphere.
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9

Characterization of Copper Oxide Nanostructures

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Field emission scanning electron microscopy (FE-SEM, JSM-7001FA, JEOL) was used to observe the specimen surface. X-ray diffraction (XRD, Rigaku, Tokyo, Japan, RINT2500HLB) with a Cu Kα line of 1.5406 Å was performed. A scanning field of 5° ≤ 2θ ≤ 100° was used, and peak fitting was performed in reference to CuO (JCPDS card no. 89-5897), Cu2O (no. 71-3645) and Cu (no. 89-2838). Transmission electron microscopy (TEM) and selected area electron diffraction (SAED) patterns for the crystal were obtained using a conventional-TEM (JEM-2000FX, JEOL) operated at 200 kV. The diffraction patterns were calculated using Mac TempasX (Total Resolution LLC). X-ray photoelectron spectroscopy (XPS, JEOL, JPS-9200) was used for the surface elemental analysis. In addition, a cross section polisher (CP, JEOL, IB 09010CP) was used for cross-sectional observation.
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10

Amyloid-Beta SEM Imaging

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The 10 μM Aβ samples were dropped onto a silicon wafer and allowed to air-dry. Samples were observed at an acceleration voltage of 15 kV using a field-emission scanning electron microscope (FE-SEM, JSM7001FA, JEOL: Tokyo, Japan).
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