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Jel 2100f

Manufactured by JEOL
Sourced in Japan

The JEL-2100F is a field emission scanning electron microscope (FE-SEM) designed for high-resolution imaging of a wide range of samples. It features a high-brightness electron source, advanced optics, and a user-friendly interface to provide high-quality images with minimal sample preparation.

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6 protocols using jel 2100f

1

Characterization of Ag@AuNRs Nanostructures

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Ag-coated AuNRs with two different shell thickness were purchased from NanoSeedz (Hong Kong, China). Structural characterization of Ag@AuNRs with different shell thickness was performed by using transmission emission microscopy (TEM, JEL-2100F, JEOL) to ensure their shapes and sizes. Furthermore, their LSPR absorption spectra in water were measured under a Varian Cary 100 UV-Vis spectroscope (Agilent, USA).
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2

GaN Wafer Bow Measurement and Characterization

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The GaN wafer bow was measured by a digital micrometer (Mitutoyo ID-CX series with the comparator stands (BS series)). The sign of a wafer bow determines the shape of the mirror GaN layer, i.e., (+) bow for convex shape and (−) bow for concave shape. To estimate the wafer bow, first, the height of the wafer center was measured by putting the convex shape wafer on a reference table. Then, the wafer was flipped 180° and loaded on a reference table; afterward, the wafer center thickness was measured. The difference between the height of the convex shape wafer and the center wafer thickness flipped 180° indicated the wafer bow. In addition, the subsurface damaged layer (SSD) of the Ga-face mirror layer after polishing and the morphology of the CMP abrasives were observed by cross-sectional (x-) transmission electron microscopy (TEM) (JEOL JEL-2100F) at an accelerating voltage of 200 keV. The remaining threading dislocations and subsurface-damage-induced scratches were observed by scanning electron microscopy (SEM) (HITACHI S-4300) with cathodoluminescence (CL) (GATAN MONO CL3+). The images of the remaining scratches and surface roughness were estimated by atomic force microscopy (AFM) (Park Systems XE7).
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3

Characterizing AuNRs@mSiO2 Nanostructures

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We used transmission electron microscope (TEM, JEL-2100F, JEOL, Japan) and scanning electron microscope (SEM, JSM-6500, JEOL, Japan) to characterize the AuNRs@mSiO2. The TEM images were analyzed based on a custom MATLAB script previously reported with some subroutine implemented in the image processing toolbox of MATLAB. Furthermore, a Varian Carry 300 UV-vis spectrometer (Agilent Technologies) was used to characterize the ensemble extinction spectrum of the AuNRs@mSiO2.
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4

Structural Characterization of AuNSs and HAuNSs

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The structural characterization of AuNSs and HAuNSs was conducted by transmission electron microscopy (TEM, JEL-2100F, JEOL, Japan) to assess the shapes and sizes. Furthermore, the LSPR extinction spectra of the AuNSs and HAuNSs in water were obtained using a Varian Carry 300 UV–Vis spectrophotometer (Agilent, USA).
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5

Structural analysis of AuNRs@mSiO2 using TEM and SEM

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Both transmission electron microscopy (TEM, JEL-2100F, JEOL, Japan)
and scanning electron microscopy (SEM, JSM-6500, JEOL, Japan) were
utilized for structural analyses of AuNRs@mSiO2. Moreover, a UV–vis spectrometer from Agilent Technologies
was utilized for recording heterogeneous LSPR ensemble spectra for
bare AuNRs and AuNRs@mSiO2 in water.
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6

Characterization of Novel Materials

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The structural properties were analyzed by X-ray diffraction (XRD; ULTIMA 4, Rigaku) with Cu Kα (λ = 1.5418 Å) and Raman spectroscopy (NEXSA, Thermo Scientific) with 532 nm laser power. To investigate the morphologies of the obtained materials, field-emission scanning electron microscopy (FE-SEM; SU8020, Hitachi) and transmission electron microscopy (TEM; JEL-2100F, JEOL) were performed. The specific surface area and pore structure were observed by nitrogen adsorption/desorption isotherms (3-Flex, Micromeritics) using the Brunauer–Emmett–Teller (BET) and Barrett–Joyner–Halenda (BJH) methods. X-ray photoelectron spectroscopy (XPS; NEXSA, Thermo Scientific, monochromatic Al Kα) was conducted to examine the surface chemical compositions and chemical bonding. The electrical resistivity was conducted by four-point probe method (CMT-SR1000N, AIT).
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