The MoS2 films were wet-transferred onto a quartz substrate by etching away the SiO2 in a potassium hydroxide solution for subsequent UV-visible spectral measurements on a UV-visible-infrared spectrometer (PerkinElmer, Lambda750). Raman and PL spectra were measured on a micro-Raman system (Horiba Jobin Yvon, LabRAM HR 800) with a 514 nm excitation laser. The Raman and PL images were obtained with a confocal micro-Raman system (WITec, Alpha 300a) with a 532 nm laser. The spatial resolution is approximately 250 nm with a focused laser by a 100× objective lens. The time-resolved PL decay transients were measured with a transient state fluorescence spectrometer (HORIBA Jobin Yvon, FL-TCSPC). Chemical composition analysis was performed using XPS (KRATOS Analytical, AXIS Ultra DLD). The surface morphology of the samples was examined by SEM (FEI, Quanta 200FEG) and AFM (Bruker, Dimension Icon). The microstructures of MoS2 and GQDs were investigated using HRTEM (FEI, Tecnai G2 F20). For the preparation of the TEM samples, the MoS2 film was also wet-transferred onto TEM grids.
Fl tcspc
Manufactured by Horiba
The FL-TCSPC is a Time-Correlated Single Photon Counting (TCSPC) instrument designed for fluorescence lifetime measurement. It provides high temporal resolution and sensitivity for studying the dynamics of fluorescent samples.
Automatically generated - may contain errors
Lab products found in correlation
Axis ultra dld, by Shimadzu (1 mentions)
Dimension icon, by Bruker (1 mentions)
Tecnai g2 f20, by Thermo Fisher Scientific (1 mentions)
Lambda 750, by PerkinElmer (1 mentions)
Alpha 300a, by WITec (1 mentions)
Quanta 200feg, by Bruker (1 mentions)
Labram hr800, by Horiba (1 mentions)
D8 advanced, by Bruker (1 mentions)
Escalab 250xi, by Thermo Fisher Scientific (1 mentions)
Hr evo nano, by Horiba (1 mentions)
Uv3600, by Horiba (1 mentions)
2 protocols using fl tcspc
1
Characterization of 2D MoS2 and GQDs
2
Characterization of AIGS-QDs and MoSe2
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The crystal structure and morphology of the AIGS-QDs and MoSe2 were measured by an X-ray diffractometer (Bruker Advanced D8), atomic force microscopy (AFM) (Bruker Multimode 8), an optical microscope (OM) (Olympus BX51) and transmission electronic microscopy (FEI, TECNAIG2 20 LaB6). The composition and binding energy of AIGS-QDs and MoSe2 were determined using X-ray photoelectron spectroscopy (XPS) with the PHI QUANTERA II instrument. The optical spectra were obtained by UV-vis-IR (Shimadzu, UV3600), PL and Raman spectroscopy (Horiba, HR EVO NANO) and time-resolved PL decay transients (Horiba FLTCSPC). UPS was measured using He I lines (Thermo ESCALAB 250XI). All optoelectronic characterizations were performed using Semiconductor Device Analyzer (Keysight B1500A) at room temperature and ambient conditions. The examination of the photoelectric response properties was conducted using semiconductor lasers (MDL-III442/100 mW) with a wavelength of 442 nm. The light intensity was detected with an optical power meter (Newport PMKIT-21-01).
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