Temperature-dependent Raman spectra were measured by using a Jobin-Yvon HR800 Raman system. For excitation, the spectral line at 532 nm of a laser was used. The temperature was adjusted by using a cooling unit (Linkam L-600 A) and a temperature controller (Linkam TMS 94).
Hr800 raman system
Manufactured by Horiba
The HR800 Raman system is a laboratory-grade Raman spectrometer designed for high-resolution analysis. It utilizes a monochromatic laser source to excite molecular vibrations, and the scattered light is analyzed to provide detailed information about the chemical composition and structure of the sample.
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Lab products found in correlation
Lambda 950, by PerkinElmer (2 mentions)
Cary eclipse spectrophotometer, by Agilent Technologies (2 mentions)
Tms94, by Linkam (1 mentions)
Tcs sp5, by Leica (1 mentions)
Vario el 3, by Elementar (1 mentions)
Tcs sp5 system, by Leica (1 mentions)
Smartlab, by Rigaku (1 mentions)
Jem 2100 high resolution transmission electron microscope, by JEOL (1 mentions)
Axis ultra dld, by Shimadzu (1 mentions)
Gemini 500, by Zeiss (1 mentions)
Ihr550, by Horiba (1 mentions)
7 protocols using hr800 raman system
1
Temperature-Dependent Raman Spectroscopy
2
Comprehensive Characterization of Carbon Nanobubbles
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A JEOL JEM-2100 high-resolution transmission electron microscope (HRTEM) was used to observe the microscopic morphologies of CNBs. A NETZSCH STA 449 F3 Jupiter/Nicolet 6700 (TGA/FT-IR) system was used to obtain the thermogravimetric analysis (TGA) curve and the three-dimensional FT-IR profile. Elemental analysis results of the pre-CNBs were obtained using an Elementar Vario EL III. X-ray photoelectron spectroscopy (XPS) spectra of the CNBs were recorded using an ESCALAB 250 XPS. Powder XRD analysis was performed using a SmartLab of Rigaku Corporation. The Raman spectrum of the CNBs was recorded on a Horiba HR 800 Raman system. FT-IR spectra were recorded using a Nicolet 6700 FT-IR spectrometer. The laser confocal fluorescence microscopy (LCFM) images were obtained on a Leica TCS/SP5 system. The time-resolved fluorescence decay curve of the CNBs was also measured on the Leica TCS/SP5 at an excitation wavelength of 405 nm. Photoluminescence (PL) spectra were measured on a Varian Cary Eclipse spectrophotometer. The UV-vis absorption spectrum was recorded on a Lambda 950, PerkinElmer. The electrochemical measurements were performed on a CHI760E electrochemical workstation. The mechanical properties of the CNBs/TPU conductive fibers were investigated using an ETM503C universal strength tester. All the measurements were carried out at room temperature.
3
Comprehensive Characterization of Materials
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Fourier-transform infrared (FT-IR) spectra were recorded using a Nicolet 6700 FT-IR spectrometer. Raman study was performed using a Horiba HR 800 Raman system equipped with a 514.5 nm laser source. The elementary composition was tested using an ELEMENTRAC®CS-i elemental analyzer. The electronic structures of the samples were determined by performing X-ray photoelectron spectroscopy (XPS) using a Kratos AXIS Ultra-DLD ultrahigh vacuum system (a base pressure of 3 × 10−10 torr) equipped with a monochromatic Al Kα source (1486.6 eV for XPS). UV-vis absorption spectra were recorded using a UV-vis spectrometer (Lambda 950, Perkin-Elmer). Photoluminescence measurements were performed using a Varian Cary Eclipse spectrophotometer. EPR spectra were recorded in solid state at room temperature using an EMX-10/12 spectrometer (microwave frequency: 9.751 GHz; modulation amplitude: 3.0 G; microwave power: 19.920 mW). Time-correlated single-photon counting (TCSPC) data were collected on an SLM 48000 spectrofluorometer using a 380 nm laser as the excitation source.
4
Raman Spectroscopy Protocol for Material Analysis
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Raman spectra were recorded by the single scan generated by the Horiba HR 800 Raman system equipped with a 514.5 nm laser.
5
SERS-based Graphene-Copper Nanoparticle System
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The morphology of the samples was characterized using scanning electron microscopy (SEM; Sirion 200). The absorption spectra of SERS substrates were extracted from the diffuse reflection (R) (1 -R) using a goniometer combined with a CCD spectrometer and an integrating sphere. The sample for TEM measurements was prepared by first transferring a single layered graphene to copper grids and subsequently evaporating Cu NPs onto the graphene layer. Raman spectra were obtained using a Horiba HR800 Raman system with a 532 nm laser. For each sample, three SERS spectra were taken at different positions of the substrate and then averaged. To prepare the sample for copper phthalocyanine (CuPc) detection, CuPc was pre-evaporated onto the graphene for a Cu-NGF system using the thermal evaporation method with an evaporating rate of 0.1 Å s -1 . The CuPc thickness was about 0.5 nm. For the sample using a silicon substrate, the thickness of CuPc is about 100 nm. The accumulated time of Raman measurements was 20 s, and the laser power at the sample position was 5 mW for CuPc.
6
Comprehensive Characterization of Synthesized Flakes
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We performed X-ray photoelectron spectroscopy measurement of as-synthesized sample using PHI VersaProbe 5000 system with Al Kα as X-ray source. The binding energies in this work were calibrated by assigning the corresponding C 1s peak located at 284.5 eV. The compositions and elements distribution of as-synthesized flakes were determined by energy-dispersive X-ray spectroscopy attached to the scanning electron microscope (SEM, Zeiss Gemini 500). We performed Atomic Force Microscopy measurements (Bruker multimode 8) by using ScanAsyst mode. The Raman spectroscopy/mappings were done under a 532.0 nm laser light and silicon-based CCD detector at room temperature using HORIBA JOBIN YVON HR800 Raman system. The spectra have been calibrated by 520.7 cm -1 phonon mode of the silicon substrate.
7
Photoluminescence Characterization of Few-Layer InSe
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The PL measurement of few-layer InSe (3-8 layer) was taken by a Horiba iHR550 spectrometer with a silicon CCD detector array. A 532 nm laser (spot size ∼1µm, laser power of 20-100µW) was used as the excitation source. For thick InSe flakes (over 50 layer), we used an Andor SR500i spectrometer equipped with an InGaAs detector and 532nm laser (spot size ∼1µm, laser power of 400µW) to measure the PL of transition A, and Horiba HR800 Raman system with 473nm laser (spot size ∼1µm, laser power of 500µW) to measure the PL of transition B.
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