The measurement of the External Quantum Efficiency (EQE) vs. photon energy of completed devices were measured with a pre-calibrated Bentham PVE300 system in the 300–1200 nm wavelength range, and calibrated using Si and Ge photodiodes. Reversed voltage-biased EQE curves were collected by connecting a Keithley 2400 source meter (Keithley Instruments Inc., Cleveland, Ohio, USA) directly to the primary coil of the transformer and biasing the device at the desired potential, referenced against the cell voltage.
Keithley 2400 source meter
Manufactured by Tektronix
Sourced in United States
The Keithley 2400 source meter is a versatile instrument that can source and measure voltage, current, and resistance. It provides precise control and measurement of these electrical parameters, making it suitable for a wide range of applications in research, development, and production environments.
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Lab products found in correlation
Labview program, by National Instruments (2 mentions)
Tensile tester, by Zwick Roell (1 mentions)
Lead acetate, by Merck Group (1 mentions)
Platinum wire, by Merck Group (1 mentions)
Chloroplatinic acid, by Merck Group (1 mentions)
Hp 34 401a multimeter, by Agilent Technologies (1 mentions)
Pgstat302n, by Metrohm (1 mentions)
Uv 3600i plus spectrophotometer, by Shimadzu (1 mentions)
Jnm ecz400r, by JEOL (1 mentions)
Quattro esem, by Thermo Fisher Scientific (1 mentions)
Jem 1230, by JEOL (1 mentions)
Labram, by Horiba (1 mentions)
Ft ir 4100, by Jasco (1 mentions)
V 750, by Jasco (1 mentions)
Neon 40 esb, by Zeiss (1 mentions)
Lambda 1050 spectrophotometer, by PerkinElmer (1 mentions)
Cary eclipse fluorescence spectrophotometer, by Agilent Technologies (1 mentions)
Jem 2010f, by JEOL (1 mentions)
Merlin field emission sem, by Zeiss (1 mentions)
Nx10 afm, by Park Systems (1 mentions)
18 protocols using keithley 2400 source meter
1
Measuring External Quantum Efficiency
2
Fabrication and Characterization of MoS2/SWNT Hybrid Films
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Equal amount of composite dispersions were filtered onto a nitrocellulose membrane and dried at room temperature. These films were cut into 0.5×2 cm strips and subsequently transferred onto a glass slide using the transfer method of Wu et al. 72 . Electrical conductivity values were calculated from resistivity measurement using a four-point probe technique with a Keithley 2400 source meter (Keithley Instruments, Inc.). It was controlled by a Lab View program (National Instruments, Inc.). The films were also used for Raman spectroscopy and scanning electron microscopy (SEM) . The as prepared MoS2/SWNT hybrid dispersions (with various MoS2:SWNT ratios) were vacuum filtered onto polyester filter membrane pore size 0.45 µm.
The membranes were dried at room temperature and the free standing hybrid films were peeled off. Free standing hybrid films were cut into strips of width ~2.25 mm. Films thicknesses were in the range of 70-80 µm measured using a digital micrometer. N.B. we limited the composites prepared to mass fractions of 6 wt% or less due to the high nanotube masses required to make such thick films. Mechanical measurements were performed using Zwick tensile tester at a strain rate of 0.5 mm/minute. Each data point is an average of 4 measurements.
The membranes were dried at room temperature and the free standing hybrid films were peeled off. Free standing hybrid films were cut into strips of width ~2.25 mm. Films thicknesses were in the range of 70-80 µm measured using a digital micrometer. N.B. we limited the composites prepared to mass fractions of 6 wt% or less due to the high nanotube masses required to make such thick films. Mechanical measurements were performed using Zwick tensile tester at a strain rate of 0.5 mm/minute. Each data point is an average of 4 measurements.
3
4-Point Probe Sheet Resistance Measurement
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A Loresta-GX MCP-T700 (Nittoseiko Analytech Co., Ltd., Kanagawa, Japan) resistivity meter was used to measure the sheet resistance (Rs) of all samples via the 4-point probe method after deposition of 400 μg of each sample on coated paper, drying at room temperature (RT), and “polishing” using mild pressure so that films with an average thickness of about 17μm were formed. The Rs values of the printed substrates were measured using a 4-point probe system (Lucas Labs Pro4 Resistivity System, Lucas Signatone Corp., Gilroy, CA, USA) and a Keithley 2400 Source Meter (Keithley Instruments, Cleveland, OH, USA).
4
Dye-Sensitized Solar Cell Fabrication
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The resulting paste was then used to fabricate the working electrode using the well-known doctor blade method as reported in [25 (link)]. The synthesized paste was employed on a cleaned and blocking layer-coated fluorine-doped tin oxide (FTO) glass and calcinated at 315°C for 12 h at a heating rate of 1°C/min. The calcinated working electrode was then soaked in (0.5 mM in ethanol) dye solution overnight and washed with ethanol to remove excess of the dye adsorbed on the surface of the electrode. The solid polymer electrolyte was prepared by dissolving the polyethylene oxide (PEO)/PEG blend in acetonitrile and adding NaI and I2 (75:25 w/w%) and iodine (10 w/w%), respectively. The platinum counter electrode was prepared by spin coating the H2PtCl6 solution on a clean FTO glass and heated at 400°C for 30 min. A drop of the above prepared electrolyte was sandwiched between the fabricated working electrode and counter electrode and used to record the current density-voltage (J-V) curve using a Keithley 2400 sourcemeter (Keithley Instruments Inc., Cleveland, OH, USA).
5
Low-Impedance Platinum Coating Electrodeposition
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In order to demonstrate a low-impedance surface coating, a nano-porous layer of platinum was electrodeposited on the microelectrodes using a current of (−4 µA) per electrode in a solution of chloroplatinic acid diluted with HCl and lead acetate (1% chloroplatinic acid; 0.005% lead acetate; 0.01 M HCl, all from Sigma Aldrich, St. Louis, MO, USA). A platinum wire (Sigma Aldrich, St. Louis, MO, USA) was used as the counter electrode and every electrode was electroplated under DC conditions for 40 s using a current source (Keithley 2400 Source Meter, Keithley Instruments, Cleveland, OH, USA).
6
Measuring Surface Electrical Conductivity
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The surface electrical conductivity, per square, ( ) of the pellets, filaments and 3D-printed parts were measured by using the ASTM D257 standard method. Two silver paint rings were used in pellets and filaments sections to measure the electrical resistance in order to minimize the electrical contact resistance (Figure 2 (b1,b2)). In the case of 3D-printed parts, two lines of silver paint were used as contact (Figure 2 (d1,d2)). The distance between the electrodes in all the cases was ~10 mm. The surface electrical conductivity (per square) was calculated from the electrical resistance, which was measured with a Keithley 2400 Source Meter (Keithley Instruments, Cleveland, OH, USA), following Equation (2).
where is the measured electrical resistance, is the length between electrical contacts and is the electrical contact perimeter.
where is the measured electrical resistance, is the length between electrical contacts and is the electrical contact perimeter.
7
Multifaceted Characterization of Thin-Film Samples
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The thin layer deposited samples were examined using both optical and confocal microscopes. The optical microscope Nikon MM-400 (Nikon Metrology, Brighton, USA) was used to visualize the sample and predetermine damage at the surface. Morphological observations of the samples were undertaken by means of a Carl Zeiss Ultra Plus field emission scanning electron microscope (Zeiss, Oberkochen, Germany). Both the surface and the cross section after coating fracture were evaluated. The conductivity of the samples was determined via four-probe method. An electric current (5–30 mA) was passed through collinear outer metal electrodes by a Keithley 2400 source meter (Keithley Instruments, Cleveland, USA) and the voltage drop was measured between two inner electrodes with a HP 34401 A multimeter (Agilent Technologies, Santa Clara, USA). Considering that the distance between adjacent electrodes (s) was 2.5 mm and the thickness (t) of the films was close to 200 nm, the necessary condition for employing four-point probe method for conductivity measurements (t <
8
Photovoltaic Device Characterization
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Photocurrent-voltage (J-V) characteristics were performed using a Keithley 2400 SourceMeter (Keithley Instruments Inc., Cleveland, OH, USA) under simulated AM 1.5G illumination (100 mW/cm2) provided by a solar light simulator (94043A, Newport Corp., Irvine, CA, USA). Cyclic voltammetry (CV) and the electrochemical impedance spectroscopy (EIS) were measured with an Autolab electrochemical workstation (PGSTAT 302 N, Metrohm AG, Utrecht, The Netherlands). CV was carried out in a three-electrode system with different counter electrodes as working electrodes, a Pt foil as counter electrode, and a Ag/Ag+ electrode as reference electrode at a scan rate of 50 mV/s. The electrodes were immersed into an anhydrous acetonitrile solution containing 0.1 M LiClO4, 10 mM LiI, and 1 mM I2. EIS was actualized with a symmetric cell assembled with two identical counter electrodes at open-circuit voltage (Voc) bias under dark condition. The measured frequency ranged from 10 mHz to 1 MHz and the magnitude of the alternative signal was 10 mV.
9
Fabrication and Characterization of OLED Devices
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The ITO glass substrates with a sheet resistance of 15 Ω per square were firstly cleaned with acetone, ethanol, and deionized water. They are then dried in an oven at 100 °C for 5 h and treated by ultraviolet ozone for 15 min. All the layers were thermally evaporated at a vacuum of 2 × 10−6 Torr. The deposition rates of HIL, HTL, EML, ETL, EIL, and Al were 0.2, 2 (for HTL, EML, ETL), 0.2, and 6 A/s, respectively, and were monitored by quartz crystals. The emissive area of the devices was 3 × 3 mm2. The EL spectra, luminance, and CIE coordinates of devices were measured by using Spectrascan PR655 photometer (JADAK, Syracuse, NY, USA) and Keithley 2400 source meter (Tektronix, Beaverton, OR, USA). EQEs were calculated from the corresponding current density, luminance, and EL spectra.
10
Characterizing SiC Diode Isolation
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Since p-n junctions are formed between the n+ and p epitaxial films, back-to-back diodes are present between adjacent traces, which provides isolation. This isolation was evaluated by measuring the forward and reverse blocking voltages of test structures consisting of p-n diodes and n-p-n junctions formed between adjacent traces that were built on the 3C-SiC wafer. A Keithley 2400 SourceMeter (Tektronix, Inc., Beaverton, OR, USA) was used to generate current-voltage (I-V) plots for adjacent traces to observe these voltages. The voltage was increased from −10 V to +10 V at a rate of 0.1 V/s for the diodes and n-p-n junctions, and the observed currents recorded. The forward voltage was estimated using a semi-logarithmic current scale I-V plot [40 (link)]. The breakdown voltage occurs when the current rapidly increases during application of negative voltage. The root mean square (rms) of the current amplitude between breakdown and forward potentials for the diodes was defined as reverse leakage current [33 (link)]. The threshold current for defining the breakdown voltages was 10 µA.
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