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27 protocols using copper foil

1

Graphene Synthesis via Automated CVD

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Graphene was grown in-house by chemical vapor deposition (CVD) on copper foils (Thermoscientific, Alfa Aesar, Kandel, DE, 25 μm thick, annealed, uncoated, 99.8%) with a fully automated setup. The foils were ultrasonicated in Acetone, rinsed with Isopropyl Alcohol (IPA) and dried with N2. Then, the foils were placed in Acetic Acid (CH3COOH) for 30 min, rinsed in de-ionized water (DIW) and Ethanol and dried with N2. The cleaned foils were pre-annealed at 1000 °C for 1 h in a H2 (20 sccm) and Ar (200 sccm) atmosphere in the CVD oven (approximately 1 mbar). Then, graphene grew for 35 min in a CH4 (0.05 sccm), H2 (20 sccm) and Ar (200 sccm) atmosphere under a pressure of about 120 mbar. After the CH4 flow was stopped, the CVD oven was left to cool down to room temperature (at approximately 1 mbar).
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2

Chemical Reagents and Sputtering Targets

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All chemical reagents were acquired from Merck and used without further purification. Deionized water was obtained using a Millipore system. The copper foils were purchased from Alfa Aesar Thermo Fisher Scientific. The zinc oxide (99.999% purity), platinum (99.99% purity) and titanium (99.995% purity) sputtering targets, and the gold wire (99.99% purity) were bought from Kurt J. Lesker Company Ltd. (UK).
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3

Large-Area Continuous Polycrystalline Graphene Growth

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The CVD method was used to grow large-area continuous polycrystalline graphene. Copper foils (25 μm thick; 99.8%, Alfa Aesar) were loaded into an LPCVD system equipped with a quartz tube 2.54 cm in diameter. The LPCVD system was heated to 1040°C for 40 min with H2 (5 sccm) followed by annealing for 30 min. The system pressure was kept at 13 Pa. Then, CH4 (30 sccm) was introduced as the carbon source for graphene growth for 20 min at a pressure of 66 Pa. Finally, the system was cooled down naturally with H2 (5 sccm) and CH4 (30 sccm).
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4

Copper Foil Fabrication and Characterization

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Copper foils (99.9% purity, 0.675 mm thickness) were supplied by Alfa Aesar, UK. Potassium chlorate (KClO 3 ), copper(II) sulfate pentahydrate (CuSO 4 Á5H 2 O), and 1-dodecanethiol were purchased from Sigma-Aldrich, USA. All other chemicals were purchased from Samchun Chemical, Korea.
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5

Synthesis of Silver Nanoparticles on Copper Foil

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Copper foil (0.025mm thick, 99.8%) was commercially obtained from Alfa Aesar (Ward Hill, MA, USA). All chemicals were purchased from commercial sources and used without further purification. (3-Aminopropyl)triethoxysilane (APTMS, 95%, Acros, Geel, Belgium), resorcinol (C6H6O2, 99%, Alfa Aesar, USA), ammonium hydroxide (NH4OH, 28%, Alfa Aesar, USA), formaldehyde solution (CH2O, 37%, Merck, Darmstadt, Germany), silver nitrate (AgNO3, 99%, Alfa Aesar, USA), hydrochloric acid (HCl, 37%, Sigma-Aldrich, Darmstadt, Germany), rhodamine 6G (R6G, 99.8%, Acros, Germany), amoxicillin (50 mg/mL, Y F Chemical, New Taipei City, Taiwan), 5-fluorouracil (5FU, 50 mg/mL, Nang Kuang Pharmaceutical, Tainan, Taiwan), and ethanol (C2H5OH, 99%, Sigma-Aldrich, Darmstadt, Germany) were used in this experiments. De-ionized water with a resistivity higher than 18.2 MΩ was used for all solution preparations.
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6

Graphene Field-Effect Transistor Array Fabrication

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Graphene was prepared on a piece of copper foil (99.8%, Alfa Aesar, Tewksbury, MA) by low-pressure chemical vapor deposition at 1020°C in a H2(99.999% purity, 80 standard cubic centimeters per minute (sccm)) and CH4(99.999% purity, 10 sccm) atmosphere. Graphene was then transferred via a bubbling transfer method [18 (link)] onto a 52-device electrode array, as shown in Fig 1a. The electrode arrays were pre-patterned on a Si wafer with 285 nm SiO2. The SiO2/Si wafer was spin-coated with PMGI (Kayaku Advanced Materials Inc., Westborough, MA) and S1813 photoresist (Kayaku Advanced Materials Inc.), followed by a standard photolithography process. The patterned wafer was developed by MF-319 developer (Kayaku Advanced Materials Inc.) for 45s. The contact metallization was 5nm Cr and 40 nm Au, deposited by thermal evaporation at a rate of 1 Å /s. Then the wafer was incubated in remover 1165 (Kayaku Advanced Materials Inc.) for liftoff. Another level of lithography process and O2 plasma etching technique (0.8 Torr pressure; 60 W power; 30 s duration) were used to define a 100 μm×10μm graphene channel. The remaining photoresist was stripped by remover 1165. Finally, the GFET arrays were annealed in an Ar/H2 atmosphere (Ar flow rate 1000 sccm; H2 flow rate 250 sccm) at 225 °C for 1 h to remove any residues from the photolithographic processing before use.
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7

Synthesis and Characterization of Zinc Phthalocyanine

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All compounds were used as received. Zinc phthalocyanine dye content 97%, phosphate buffered saline (PBS, 1 × sterile biograde), propidium iodide (PI), Luria−Bertani broth (LB), M9 minimal salts (M9 media), D-(+)-glucose, calcium chloride (anhydrous), and ampicillin (BioReagent grade) were purchased from Sigma-Aldrich (St. Louis, MO). Copper foil (0.025 mm thick) and Puratronic® (99.999%) were acquired from Alfa Aesar. Deionized (DI) water was obtained from a Barnstead Nanopure Infinity water purification system (Thermo Fisher Scientific, Waltham, MA). Silicon (Si) [100] (boron doped, resistivity <0.005Ω • cm) was purchased from Addison Engineering, Inc (San Jose, CA). Pencil (graphite bar 8B) was purchased from the University of Massachusetts Amherst art store.
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8

Graphene Film Synthesis and Transfer

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A graphene film was synthesized on copper foil (25 μm thickness, Alfa Aesar) using a chemical vapor deposition method with H2 and CH4 gases. After graphene growth, the surface was coated with poly(methyl methacrylate) (PMMA) (950K A4, Microchem). The copper foil was subsequently etched away using an aqueous solution of ammonium persulfate (0.1 M, Sigma-Aldrich). The PMMA/graphene layer was then transferred onto a SiO2 (300 nm)/n++Si wafer through a wet transfer process; it was allowed to dry at room temperature for 6 hours. The PMMA was removed with chloroform. Chromium (4 nm) and gold (40 nm) were thermally evaporated onto the graphene/substrate in sequence to form the source and drain electrodes through shadow masks.
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9

Graphene Synthesis and Functionalization

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The chemical vapor deposition (CVD)-based synthetic
method of graphene
was fully described in a previous paper.30 (link) Briefly, graphene was CVD-synthesized on a high-purity copper foil
(Alfa Aesar, 99.999%) with flowing  5 sccm H2 and  45 sccm CH4 gas. After spin-coating one
side of graphene with poly(methyl methacrylate) (PMMA), back-side
graphene was etched using oxygen plasma. Then, the PMMA layer on graphene
was removed by acetone. The remaining copper was etched in 1.8 wt
% ammonium persulfate solution. Finally, the monolayer graphene was
rinsed with distilled water several times. After washed graphene was
laid on a Si/SiO2 (300 nm) wafer, the samples were treated
using a conventional UV/ozone cleaner (Bioforce) for 5 and 10 min,
respectively, before sample loading and Raman measurements. Disperse
red 1 (DR1, Aldrich, 95%) was used as received. Each graphene sample
on a silicon piece is dipped into the ethanolic solution of DR1 (200
μM) for more than 30 min and then washed with copious ethanol
and deionized water to remove the unbounded molecules. A 514.5 nm
laser light of 0.5 mW (or 532 nm of 2 mW) was irradiated onto the
sample surface to measure Raman signals and to drive photoreduction
simultaneously.30 (link) Back-scattered Raman
signals were measured using the commercialized Raman model (Renishaw
inVia RM 1000 (514.5 nm, 2400 grooves/mm) or Witec Alpha 300
(532 nm, 600 grooves/mm)).
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10

Graphite-Based Conductive Polymer Synthesis

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Graphite flakes, aniline (≥99.5%), ammonium persulfate (APS) (≥98.0%), NMP (99.5%), (1S)-(+)-10-CSA, 4-DBSA, and D-sorbitol (≥98%) were purchased from Sigma-Aldrich. Sulfuric acid (95.0%), hydrochloric acid (HCl, 35%), ammonium hydroxide solution (NH4OH, 25%), and sodium chloride (99.5%) were obtained from OCI Co. Ltd. Copper foil (polished, 30 μm thickness) was purchased from Alfa Aesar.
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