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32 protocols using helios 600i

1

Characterization of Initial Resistance State

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Specimen of the device at its initial resistance state (IRS) was prepared in a focused ion beam (FIB) system, FEI Helios 600i. TEM and STEM imaging of IRS specimen was conducted in a 200 kV JEOL 2010F transmission electron microscope.
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2

Characterization of CuSe Nanostructured Films

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SEM images of the CuSe NS
films were taken on a scanning electron microscope (FEI quanta 200
and Helios 600i), operating at an accelerating voltage of 20 kV. TEM
and HR-TEM images were taken on an FEI, Tecnai F20 transition electron
microscope at an accelerating voltage of 200 kV. XRD patterns were
recorded using a Dandong Comp. TD-3500 diffractometer with Cu Kα radiation (λ = 1.54056 Å). XPS data were
acquired using a scanning X-ray microprobe (PHI 5000 Verasa). BEs
of Cu 2p and Se 3d were calibrated using the C 1s peak (BE = 284.6
eV) as a standard.
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3

Serial Ion Beam Milling and SEM Imaging

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Lowicryl embedded cell monolayers were loaded into a scanning electron microscope (Helios 600i, FEI company, Eindhoven, The Netherlands). The front surface of the block was aligned parallel to the scanning direction of the electron beam. Subsequently, the stage was brought to eucentric height and tilted to 52°. After the initial alignment, the area of interest was identified using backscattered electron (BSE) imaging with an In-lens detector. In order to reduce re-deposition and to improve imaging conditions, surplus block material around the area of interest was removed with a high ion beam current (30 keV, 2.5 nA). Afterwards a sacrificial platinum layer (500 nm) was deposited on the top surface of the sample using the gas injection system. As a final preparation step, the front surface was polished with a decreased ion current (30 keV, 2.8 nA). Serial milling and imaging of a stack of 33 × 28 × 17 μm3 was performed using the Auto Slice and View software with a pixel size of ~8 nm perpendicular to the beam direction, and ~20 nm along the beam direction (FEI company, Eindhoven, The Netherlands) with 30 keV and 0.7 nA for the milling steps and 2 keV and 1.4 nA for the imaging steps. Overlay of LSM and IA-SEM stacks and manual segmentation was performed using the Amira software package (Amira 3.0; TGS).
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4

Focused-Ion-Beam-Induced Folding of 3D Structures

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The 3D structures were experimentally fabricated on self-supporting Au films by employing a focused-ion-beam (FIB) irradiation-induced folding technique26 (link), 30 (link). Specifically, the pre-designed patterns were firstly cut by utilizing a dual beam FIB/SEM system (FEI Helios 600i). Subsequently, the FIB was continuously scanned using the line scan mode along the bottom edge of the patterned structures, which folded the structures naturally by utilizing the ion-implantation induced stress. During fabrications, the acceleration voltage of Ga+ was set to 30 kV and an ion-beam current of 40 or 80 pA was used, with which a maximum folding angle of 90° could be achieved with an accumulated ion dose of ~3.2 × 107 ions/μm26 (link). Due to the large scale of the structure, the fabrication resolution is about 20 nm.
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5

Microstructural Investigation of FDSC Alloys

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Microstructural investigation of the samples was performed using a Hitachi SU-70 SEM and an FEI Tecnai F30 TEM, operated at 300 kV accelerating voltage. The microstructure of the FDSC samples was observed on the as-cast surface and also confirmed by investigations performed on the surface cleaned by focused ion beam (FIB). TEM lamellae were extracted from the as-cast alloy and FDSC samples using the same FIB system (FEI Helios 600i). Phase compositions were determined using energy dispersive X-ray spectroscopy elemental analyses via both SEM and TEM. XRD characterization of the FDSC samples (with a volume of about 30 × 100 × 100 µm3) was performed using the spinning mode of an Xcalibur Oxford Diffraction X-ray diffractometer with a Mo Kα radiation source. XRD analyses of large samples (conventional DSC and as-cast, and to verify the glassy as-cast structure) were performed using a Phillips MRD instrument fitted with a 0.5-mm microcapillary tube and a Cu Kα radiation source.
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6

Nanowire Electrical Resistance Measurement

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Four gold electrodes with thickness of about 100 nm are deposited onto a thermal oxide silicon substrate with a 5 nm thick Cr film as an adhesion layer. The inner two electrodes are connected with four terminals, denoting as T2+ , T2−,T3+ and T3− (Fig. 1a and b), and the gaps between the two electrodes are of about 5 μm, and 15 μm, respectively. The reactive ion etching (DRIE) is used to trench the gap to a depth of about 1 μm. A probe station is used to manipulate a homogenous nanowire and bridge it across the two electrodes. The platinum/C is deposited to make stable electrical contacts between the electrodes and nanowire (FEI Helios 600i).
In the 2-P configuration, a small direct electrical current (100 nA) is imposed on the T2+ and T3+ terminals, while the voltage drop between the T2− and T3− terminals is recorded by a digital multimeter (Agilent 3458 A) with input impedance of over 10 GΩ, so the T2− and T3− terminals draw little current. For the same silver nanowire, the electrical current is switched to the T1 and T4 terminals to perform the 4-P experiment. Obviously, in the 4-P configuration, the electrical contact resistances between nanowire and electrodes, denoting as Rc1 and Rc2 in Fig. 1d, would be excluded in the detected electrical resistance of the nanowire.
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7

Isotopically Resolved 3D Nanoscale Characterization by APT

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APT is a 3D nanoscale characterization method in which field evaporated ions from a sharpened needle specimen are analyzed by a position-sensitive single-particle detector, in order to provide an isotopically resolved three-dimensional representation of the real-space specimen elemental distribution59 (link). The field evaporation of non-conductive samples is achieved using a pulsed laser focused on the needle specimen apex.
A FIB-SEM based lift-out procedure was used to prepare needle-shaped APT specimens using FEI Helios 600i at the University of Oregon CAMCOR facility, and a Helios Dual Beam Nanolab 600 FIB-SEM housed at Environmental Molecular Sciences Laboratory, PNNL.
The APT analysis was carried out using a CAMECA LEAP (local electrode atom probe) 4000X HR system equipped with a 355 nm wavelength picosecond pulsed UV laser. A 30 K sample base temperature and a 100 or 200 kHz laser pulse repetition rate was used. Atom probe data reconstruction and analysis was performed using Cameca IVAS software.
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8

Focused Ion Beam Specimen Preparation for High-Resolution TEM

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The cross-sectional TEM specimen was prepared by focused ion beam (FIB, FEI Helios 600i) milling. To avoid sample damage by the Ga-ion beam, a 2 µm thick Pt layer was deposited above the region of interest. The main thinning process was carried out using a 30 kV Ga-ion beam until the thickness was reduced to below 100 nm, followed by sweeping surface amorphous with a 2 kV Ga-ion beam. The high-resolution TEM image, HAADF-STEM images and EELS spectra were carried out using the Titan ETEM G2 scanning/transmission electron microscope. The optimal energy resolution of EELS was ~0.25 eV, as judged by the full-width at half-maximum of the zero-loss peak. FFT and EELS were filtered using Digital Micrograph software.
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9

Fabrication of 3D Nanofins via Electron Beam Lithography

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In this work, quartz cleaned in acetone, isopropanol (IPA), and deionized water in sequency is used to hold the 3D nanofins. Secondly, the polymethyl methacrylate (PMMA) resist is spun on a clean quartz plate to obtain a thick enough photoresist film and baked at 180 °C for 1 min. Successively, the patterns are exposed using electron beam lithography system (6300FS, JEOL), and then the patterns are obtained by developing in a mixture of MIBK and IPA (1:3). Next, the ALD process of TiO2 is carried out in a home-built system. H2O is the source of O, and tetrakis (dimethylamino) titanium (TDMAT) precursor is used as the Ti source without chlorine contamination and achieved the required vapor pressure by heating the chamber. Meanwhile, the continuous flow of Ar carried gas throughout the development. After ALD process, a dry etching process is executed in the ICP-RIE system (Plasmalab System 100 ICP180, Oxford) with a mixed reactive gas of CHF3 to remove the TiO2 film on the top of the resist. Finally, another dry etching process with Oxygen plasma is applied to remove the residual resist. A scanning electron microscope (SEM) (Helios 600i, FEI) is used to characterize the morphology of the samples.
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10

Resistance State Analysis of Device Cells

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Specimens of the device cells at the initial resistance state (IRS), after switched to the low resistance state (LRS), and after switched back to the high resistance state (HRS) were respectively prepared in a focused ion beam (FIB) system, FEI Helios 600i. STEM imaging and EDS analysis of these specimens were conducted in a 200 kV FEI Tecnai Osiris transmission electron microscope.
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