Helios 600i
The Helios 600i is a high-resolution scanning electron microscope (SEM) designed for advanced imaging and analysis. It features a field emission electron source, high-resolution electron optics, and a range of detectors to capture detailed information about sample topography, composition, and structure.
Lab products found in correlation
32 protocols using helios 600i
Characterization of Initial Resistance State
Characterization of CuSe Nanostructured Films
films were taken on a scanning electron microscope (FEI quanta 200
and Helios 600i), operating at an accelerating voltage of 20 kV. TEM
and HR-TEM images were taken on an FEI, Tecnai F20 transition electron
microscope at an accelerating voltage of 200 kV. XRD patterns were
recorded using a Dandong Comp. TD-3500 diffractometer with Cu Kα radiation (λ = 1.54056 Å). XPS data were
acquired using a scanning X-ray microprobe (PHI 5000 Verasa). BEs
of Cu 2p and Se 3d were calibrated using the C 1s peak (BE = 284.6
eV) as a standard.
Serial Ion Beam Milling and SEM Imaging
Focused-Ion-Beam-Induced Folding of 3D Structures
Microstructural Investigation of FDSC Alloys
Nanowire Electrical Resistance Measurement
In the 2-P configuration, a small direct electrical current (100 nA) is imposed on the T2+ and T3+ terminals, while the voltage drop between the T2− and T3− terminals is recorded by a digital multimeter (Agilent 3458 A) with input impedance of over 10 GΩ, so the T2− and T3− terminals draw little current. For the same silver nanowire, the electrical current is switched to the T1 and T4 terminals to perform the 4-P experiment. Obviously, in the 4-P configuration, the electrical contact resistances between nanowire and electrodes, denoting as Rc1 and Rc2 in Fig.
Isotopically Resolved 3D Nanoscale Characterization by APT
A FIB-SEM based lift-out procedure was used to prepare needle-shaped APT specimens using FEI Helios 600i at the University of Oregon CAMCOR facility, and a Helios Dual Beam Nanolab 600 FIB-SEM housed at Environmental Molecular Sciences Laboratory, PNNL.
The APT analysis was carried out using a CAMECA LEAP (local electrode atom probe) 4000X HR system equipped with a 355 nm wavelength picosecond pulsed UV laser. A 30 K sample base temperature and a 100 or 200 kHz laser pulse repetition rate was used. Atom probe data reconstruction and analysis was performed using Cameca IVAS software.
Focused Ion Beam Specimen Preparation for High-Resolution TEM
Fabrication of 3D Nanofins via Electron Beam Lithography
Resistance State Analysis of Device Cells
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