The
Ge NWs were analyzed
using a FEI
Inspect F50 scanning electron microscope. The Ge NWs were
deposited on lacey carbon copper grids by dry transfer using shear
force for TEM characterization (Plano). In this study, a FEI TECNAI
F20 operated at 200 kV and equipped with high angle annular dark field
(HAADF) STEM and EDX detectors was used. The limited accuracy of the
EDX analysis can lead to a potential deviation by ±0.5 at. %
of the values stated here. The elemental maps were recorded and quantified
using the AMETEK TEAM package. The images were recorded and treated
using Digital Micrograph software. LA-ICP-MS measurements were performed
using a commercially available laser ablation system (New Wave 213,
ESI, Fremont, CA, USA) with a frequency-quintupled 213 nm Nd:YAG laser
in combination with a quadrupole ICP-MS instrumentation (Thermo iCAP
Qc, ThermoFisher Scientific, Bremen, Germany). For quantification,
69Ga was compared with the
76Ge signal while standards
of metal ratios between 1:99 and 5:95 Ga/Ge were prepared using the
metal halogenides dissolved in aqueous potassium hydroxide.
Seifner M.S., Sistani M., Porrati F., Di Prima G., Pertl P., Huth M., Lugstein A, & Barth S. (2018). Direct Synthesis of Hyperdoped Germanium Nanowires. ACS Nano, 12(2), 1236-1241.