Photoresist (PR; AZ5214, MicroChemicals GmbH, Germany) was patterned by using photolithography process on the Si wafer with 2 μm thick thermal oxide to fabricate serpentine microheater layer. A 200 nm thick platinum (Pt) film was deposited on the substrate by e-beam evaporation. The substrate was immersed in the acetone with sonication for removing the PR pattern and dummy Pt layer. Afterwards, a 600 nm thick silicon dioxide (SiO2) layer was deposited on the substrate by plasma enhanced chemical vapor deposition (PECVD; Concept Two Sequel/Speed, Novellus Systems, Inc., USA) with deposition rate of 43 nm/min for electrical insulation. That was deposited at 250°C with 30 W of plasma power under 900 mTorr of SiH4, N2O and N2 gas mixture. PR was patterned again on the SiO2 layer for interdigitated electrodes by aligning with the underlying microheaters. A 200 nm thick gold (Au) film was deposited on the substrate by e-beam evaporation for electrodes. The PR pattern and dummy Au layer were removed in the acetone.
Az5214
Manufactured by MicroChemicals
Sourced in Germany
The AZ5214 is a positive photoresist material used in semiconductor manufacturing processes. It is designed for high-resolution photolithography applications. The core function of the AZ5214 is to serve as a light-sensitive coating that can be selectively exposed and developed to create patterns on the surface of a semiconductor wafer.
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Lab products found in correlation
6 protocols using az5214
1
Microheater Fabrication with Interdigitated Electrodes
2
Fabrication of Piezoelectric Surface Acoustic Wave Chip
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The SH-SAW chip was designed with central frequency 122.4 MHz. A lithium-tantalate (LiTaO3) piezoelectric substrate with a large electromechanical coupling coefficient (K2) was chosen [13 ]; the interdigital transducer (IDT) made from gold was patterned with photolithography and an e-beam evaporator. The IDT consist of 50 pairs with finger width 8.5 μm, and deposited thickness 100 nm; an overall die size is 13.4 mm × 7.4 mm. The process included three main steps: (a) photolithography, (b) e-beam evaporation and (c) lift-off, as shown in Figure 1 .
(a) Photolithography
The LiTaO3 wafer was first cleaned according to the following standards. The wafer was given a positive photoresist (AZ5214, MicroChemicals GmbH, Ulm, Germany) at 3000 rpm for 30 s. The wafer was then baked at precisely 100 °C for 1 min and exposed to ultraviolet (UV) light. The pattern was developed and inspected with a microscope to verify the completeness of the IDT structure.
(b) E-beam evaporation
After the photolithographic process, Cr (thickness 20 nm) was deposited first on the substrate as an adhesive layer; Au (thickness 100 nm) was deposited second as a major structure with e-beam evaporation.
(c) Lift-off
After the evaporation, the wafer was immersed and sonicated in acetone to remove unnecessary photoresist, and the pattern was defined. The finished wafer was diced into chips with laser cutting.
(a) Photolithography
The LiTaO3 wafer was first cleaned according to the following standards. The wafer was given a positive photoresist (AZ5214, MicroChemicals GmbH, Ulm, Germany) at 3000 rpm for 30 s. The wafer was then baked at precisely 100 °C for 1 min and exposed to ultraviolet (UV) light. The pattern was developed and inspected with a microscope to verify the completeness of the IDT structure.
(b) E-beam evaporation
After the photolithographic process, Cr (thickness 20 nm) was deposited first on the substrate as an adhesive layer; Au (thickness 100 nm) was deposited second as a major structure with e-beam evaporation.
(c) Lift-off
After the evaporation, the wafer was immersed and sonicated in acetone to remove unnecessary photoresist, and the pattern was defined. The finished wafer was diced into chips with laser cutting.
3
2D Periodic Chessboard Phase Grating Fabrication
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The 2D periodic chessboard phase grating with a pitch of 19.1 μm and a duty cycle of 0.5 was patterned first by exposing optical photoresist (AZ5214, MicroChemicals) by laser lithography at 405 nm wavelength and a dose of 220 mJ/cm2 (LaserWriter LW405B, Microtech) followed by a reactive ion etching (Oxford Plasma Technology Plasmalab system 100) under the following conditions: pressure of 30 mtorr, fluxes of 40 sccm (standard cubic centimeters per minute) for Ar and 5 sccm for CHF3, and radio frequency power of 300 W, leading to a DC bias of 850 V to etch 670 nm of material. Last, the etch mask was removed with acetone.
4
Flexible Graphene Multielectrode Arrays
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The graphene multielectrode arrays were fabricated using standard photolithography (see Figure 1 a for the fabrication steps). In order to create a flexible chip, a sacrificial layer of Cr/Au/Cr (10/100/50 nm) was evaporated on top of a Si wafer prior to the fabrication. Then, two layers of PI-2611 (HD Microsystems, Parlin, NJ, USA) were spin-coated on top of the wafer to result in an approximately 10 µm thick polyimide film after a hard-bake (350 °C). The subsequent fabrication consisted of: (1) evaporation of a metallization layer (Ti/Au, 10/50 nm) using a LOR-3B/nLOF (MicroChemicals GmbH, Ulm, Germany) resist stack for liftoff; (2) graphene transfer using a high-throughput technique [21 (link)]; (3) defining graphene areas using AZ-5214 (MicroChemicals GmbH) resist and oxygen plasma (200 sccm, 300 W, 5 min); (4) a second metallization to sandwich the graphene and provide a lower contact resistance; (5) a final passivation with photostructurable polyimide HD-8820 (HD Microsystems) resulting in an approximately 3 µm thick layer. After fabrication, the chips were immersed into chromium etchant (Sigma, St Louis, MO, USA) for approximately 24 h to remove the chromium sacrificial layer [26 (link)]. The resulting devices can be seen in Figure 1 d.
5
Fabrication of Suspended VO2 Nanomembranes
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All of the samples were patterned by photolithography and reactive ion etching (RIE). Firstly, the photoresist, AZ-5214 (Microchemicals GmbH, Germany), with about 1 μm thickness was spin-cast and photolithography patterned on the VO2 as an etching window pattern. Then, the patterned sample was etched by RIE under the following conditions: 15 sccm CF4 flow rate, 30 sccm Ar flow rate, 300 mT chamber pressure, and 100 W power for 100 s. A thinning VO2 was fabricated by a second photolithography step. The designed thinning part was then etched by RIE under the following conditions: 10 sccm CF4 flow rate, 30 sccm Ar flow rate, 100 mT chamber pressure, and 80 W power for 15 s. A narrow strip of Cr with the thickness 30 nm was deposited on thinned VO2 by electron beam evaporation method. After that, 40% HF (hydrofluoric acid) solution was used to selectively remove SiO2 layer to undercut and release the nanomembranes without damaging. The etching rate was around 10 nm/min. Finally, critical point drying was applied to dry the rolled-up nanomembranes without structural collapse.
6
Self-Rolling VO2 Nanostructures
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As the first step of self-rolling, a layer of photoresist (AZ-5214, Micro-chemicals GmbH, Germany) with about 1 μm thickness was spin-coated (4000 RPM, 30 s, KW-4A, SIYOUYEN, China) and etching windows were defined by photolithography (HEIDELBERG, UPG501). After development, the window was exposed and etched by reactive ion etching (RIE, Trion T2) for 60 s (30 sccm CF4 and 30 sccm Ar flow, 300 mTorr chamber pressure, and 100 W etching power). The photoresist layer was removed by ultrasonication in ethanol (99.7%) lasting for 30 s. For the rolling process, patterned VO2 NMs were released from the substrate by using 40% HF (hydrofluoric acid) solution at room temperature for 5 min. Due to the high selectivity, the property of the VO2 NMs can hardly be influenced by this etching process. Finally, critical point drying (Leica CPD030 Critical Point Dryer) was applied to dry the rolled-up structures, avoiding structural collapse.
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