Spi 400 atomic force microscope

Crystal phase structures of the CaTiO₃ nanopowder and pentacene were characterized by an MiniFlex 600 X-ray diffraction (XRD) instrument (Rigagu, TKY, Japan) over the 2θ of 10°to 80°. Electrical characteristics (capacitance vs. voltage, current vs. voltage) of OFETs were performed by a Keithley 4200-SCS semiconductor parameter analyzer (Tektronix, Johnston, OHIO, USA), whereby all electrical measurements were carried out in air. The surface morphologies of the dielectric films and pentacene were characterized with an SPI 400 atomic force microscope (HITACHI, TKY, Japan) in tapping mode. The surface energies of insulators were established by measuring the contact angle using a Kino SL200 KS goniometer. Film thickness was tested by Tencor D-100 step profiler (KLA, Milpitas, CA, USA). During the interval of the bending test, the device is kept bent (50 mm) and placed in a glove box filled with nitrogen to avoid the influence of water and oxygen in the air on the pentacene.

Crystal phase structures of the pentacene were characterized by an MiniFlex 600 X-ray diffraction (XRD) instrument (Rigagu, Tokyo, Japan) over the 2θ of 10° to 80°. The surface energies of insulators were established by measuring the contact angle using a kino SL200 KS goniometer (Kino, NY, USA). Electrical characteristics of OTFTs were performed by a Keithley 4200-SCS semiconductor parameter analyzer (Tektronix, Johnston, OH, USA) in ambient. The atomic force microscopy (AFM) images were obtained by an SPI 400 atomic force microscope (HITACHI, Tokyo, Japan) in tapping mode.