Jem arm300f2

Surface morphologies of TeSeO films were examined with scanning electron microscopy (SEM, FEI Quanta 450 FEG SEM) and atomic force microscopy (AFM, Bruker Dimension Icon AFM). A Rigaku SmartLab X-ray Diffractometer (XRD) with Cu Kα radiation was used to evaluate the crystallinity and crystal structure of the TeSeO films. To get a stronger signal from the TeSeO film and avoid signal from the substrate, grazing-incidence XRD measurement was performed with a fixed grazing-incidence angle of 1°. Crystal structures were also determined by high-resolution transmission electron microscopy (HRTEM, JEOL 2100F). Elemental mappings were performed using an energy-dispersive X-ray spectroscopy (EDS) detector attached to a spherical-aberration-corrected scanning transmission electron microscopy (STEM, JEOL JEM-ARM300F2). To realize the elemental and chemical analysis of samples, a Thermo Scientific ESCALAB 250Xi system was employed to perform ultraviolet photoelectron spectroscopy (UPS) and X-ray photoelectron spectroscopy (XPS). Before UPS and XPS measurement, the samples were cleaned by Ar⁺ ion etching to remove surface contamination. All the XPS peaks were calibrated by carbon (C 1s) peaked at 284.8 eV.

The morphology and structure of the samples were characterized using a scanning electron microscope (FEI Nova NanoSEM 450, 15 kV) and an aberration-corrected transmission electron microscope (JEOL JEM-ARM300F2, 60 kV). The cross-sectional SEM images of Li-HVDG were collected with a Helios focused ion beam SEM instrument (FEI Helios G4 PFIB UXe DualBeam system) with 2.5-μA Xe plasma FIB ion beam. The cross-sectional milling process was started by coating a Pt layer on the Li-HVDG and performed step by step at a voltage of 30 kV. The final polishing process was carried out at a voltage of 3 kV. XRD was conducted on a D8 (Bruker) Thin-Film XRD with Cu Kα radiation (λ = 1.54056 Å). Specific surface area was measured using a Micromeritics TriStar 3030 instrument using the nitrogen physisorption technique at −195.8°C. Before analysis, the samples were degassed at 150°C for 3 hours under vacuum. XPS analysis was performed using a Thermo ESCALAB250i instrument with Al Kα radiation (15 kV, 150 W). ToF-SIMS (ION-TOF TOFSIMS 5) was performed using a bismuth cluster analysis beam (30 keV). Raman measurements were performed using a Renishaw inVia 2 Raman Microscope with an excitation wavelength of 633 nm.