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Ultra plus field emission microscope

Manufactured by Zeiss
Sourced in Germany

The ZEISS Ultra Plus Field Emission microscope is a high-resolution imaging instrument designed for advanced materials analysis. It utilizes a field emission electron source to produce a stable, high-brightness electron beam, enabling the capture of detailed images at the nanoscale level. The microscope is equipped with a range of analytical capabilities to support materials science research and industrial applications.

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4 protocols using ultra plus field emission microscope

1

Cryogenic Imaging of Candida albicans

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Cells from the control C. albicans culture and those incubated with AAF were centrifuged at 6000×g for 10 min. The supernatant was then discarded and 200 µL of GH solution (glucose, Na-HEPES, sterile water) were added to the dense cell suspension. The samples were re-centrifuged in the same conditions, and the supernatant was discarded again. The fungal cells in a small amount of the GH solution were applied to the transfer and placed in the sublimation chamber. The cooling process was carried out for 12 min at − 92 °C. Then, the samples were transferred to the preparation chamber, where they were broken using a special blade. C. albicans cells were then imaged with a scanning electron microscope (ZEISS Ultra Plus Field Emission microscope). The images were taken at a magnification of 30.000 × and at electron high tension (EHT) 5 kV.
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2

Ultrastructural Analysis of Venetoclax-Treated Cells

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The control culture cells and cells treated with Venetin-1 at the concentration of 100 µg mL−1 were centrifuged (room temperature, 6000×g, 10 min) and the supernatant was discarded. The pellet was suspended in 200 µL of a GH solution (composed of glucose, HEPES, and sterile water) and centrifuged again. Then, the supernatant was removed and 20 µL of the GH solution was added. Next, the cells were transferred into a sublimation chamber with a temperature of − 92 °C for 12 min. After that, the frozen cultures were cut in the preparation chamber and analyzed with a ZEISS Ultra Plus Field Emission Microscope (Carl Zeiss, Germany) with electron high tension (EHT) 5 kV and under magnification 30.000 × 39 (link),42 (link).
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3

Microparticle Characterization by SEM and TEM

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10 μl of laser particle suspensions in water were added and air-dried on silicon wafer chips for scanning electron microscopy (SEM), and formvar-carbon coated nickel mesh grids (Electron Microscopy Sciences) for transmission electron microscopy (TEM). TEM images were obtained using a JEOL JEM 1011 transmission electron microscope at 80 kV. SEM characterization was performed on a Hitachi S-4800 and a Zeiss Ultra Plus Field-Emission microscopes at 2 keV. For cross-sectional viewing, coated microdisks were first milled with a focused Ga+ beam using a dual-beam SEM/FIB tool (Helios Nanolab, FEI Company). Energy-dispersive X-ray spectroscopy and mapping was performed on a Zeiss Supra55VP Field Emission microscope at 8 keV.
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4

Microparticle Characterization by SEM and TEM

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10 μl of laser particle suspensions in water were added and air-dried on silicon wafer chips for scanning electron microscopy (SEM), and formvar-carbon coated nickel mesh grids (Electron Microscopy Sciences) for transmission electron microscopy (TEM). TEM images were obtained using a JEOL JEM 1011 transmission electron microscope at 80 kV. SEM characterization was performed on a Hitachi S-4800 and a Zeiss Ultra Plus Field-Emission microscopes at 2 keV. For cross-sectional viewing, coated microdisks were first milled with a focused Ga+ beam using a dual-beam SEM/FIB tool (Helios Nanolab, FEI Company). Energy-dispersive X-ray spectroscopy and mapping was performed on a Zeiss Supra55VP Field Emission microscope at 8 keV.
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