Inverted phase contrast microscope observer d1

Scratch tests were used to evaluate the effect of SW on cell migration and the effect of ADSCs on the migration ability of SW-treated cells [19 (link)]. The HaCaT were still divided into three groups: normal group, SW group, and SW+hADSC group. The cells were inoculated in 6-well plates at 1 × 10⁶ cells/well, and they were cultured normally until the cells were 80%-90% confluent. Then, the confluent cell monolayer was scratched with a sterile 10 μl pipette tip, and the cells were washed with PBS. Fresh medium was then added to the cells, and the culture method was the same as in the above EdU experiment. Cells were observed, and images were recorded with a Zeiss inverted phase contrast microscope (Observer. D1, Shanghai, China) at 0, 12, 24, and 36 hours after scraping the cells. The migration area was measured by using ImageJ software (Bethesda, MD, USA). The following formula was used to evaluate cell migration ability:
$\begin{array}{c}\text{Migration\hspace{0.17em}area\hspace{0.17em}}\left(\%\right)=\frac{\text{A}0-\text{Ax}}{\text{A}0}\times 100\%,\end{array}$ where A0 represents the initial scratch area (t = 0 h), and Ax represents the residual scratch area at the time of measurement (t = n h).

A cell scratch assay was used to explore the effect of the co-culture of seawater and hADSCs on cell migration. HUVECs were inoculated in six-well plates with 1 × 10⁶ cells/well and cultured to 80–90% confluency. The groupings and treatments were the same as those used in the EdU assay. The cell monolayer was scratched with a 10 μL sterile pipette tip quickly and washed two-to-three times with PBS. At 0, 12, 24, and 36 h observation time points, the scratch area was photographed using a Zeiss inverted phase contrast microscope (Observer D1, Shanghai, China) and measured using ImageJ software. The following formula was used to assess cell migration ability:
$\text{Migration area (\%)}=\frac{\text{S}0-\text{Sx}}{\text{S}0}\times 100\%$
where S0 represents the initial scratch area (t = 0 h) and Sx represents the residual scratch area at the time of measurement (t = n h).