We obtained AFM topography, LFM, and TSM images simultaneously with the contact mode using two AFMs (SPA-300HV from SEIKO and XE-100 from PSIA) at ambient condition. Because scan size of PSIA XE-100 AFM (50 μm) is much larger than that of SEIKO SPA-300HV AFM (20 μm), PSIA XE-100 AFM has the advantage for observing a large area of the graphene sheet, as shown in Figure 1 . As PSIA XE-100 has a low resolution, we used SEIKO SPA-300HV AFM to obtain high resolution TSM images at ambient condition. We used lateral friction tips (PPP-LFMR with spring constant of 0.2 N/m, Nanosensors) to obtain AFM topographic and TSM images. During AFM measurements, we maintained the loading force at 0 nN. The definition of AFM scan directions has been described in earlier publications15 (link)16 (link). In order to obtain TSM and LFM images to determine ripple directions, we need two different scan directions: one being a lateral scan when the AFM cantilever is moved perpendicular to the cantilever arm, and the other being a longitudinal scan when the AFM cantilever is moved parallel to the cantilever arm. Since the TSM provides much clearer image for observing the configuration of ripple domain structures than LFM16 (link), we can investigate the ripple domain structures in various exfoliated monolayer graphene sheets using TSM images.
Spa 300hv
Manufactured by Seiko Instruments
Sourced in Japan
The SPA-300HV is a high-vacuum scanning probe microscope (SPM) designed for advanced surface analysis. It provides high-resolution imaging and measurement capabilities for a wide range of sample types. The SPA-300HV is capable of operating in multiple scanning modes, including atomic force microscopy (AFM) and scanning tunneling microscopy (STM).
Automatically generated - may contain errors
Lab products found in correlation
Jsm 5610lv, by JEOL (1 mentions)
90pluspals, by Bruker (1 mentions)
Jem 2100f, by JEOL (1 mentions)
Ultima 4, by Rigaku (1 mentions)
Irtracer 100, by Shimadzu (1 mentions)
Jem 2100f tem, by JEOL (1 mentions)
Cary 60 uv vis spectrometer, by Agilent Technologies (1 mentions)
Phi x tool, by Physical Electronics (1 mentions)
Ultra 55, by Zeiss (1 mentions)
Omcl tr400psa, by Olympus (1 mentions)
Ppp lfmr, by Nanosensors (1 mentions)
13 protocols using spa 300hv
1
Probing Graphene Surface Topography with AFM
2
Comprehensive Characterization of ICCN
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The successfully introduction of sodium ions in ICCN was systematically investigated by FTIR spectroscopy (EQUINOX 55), EDS (Nova Nano SEM 450) and X-ray photoemission (XPS) (ESCALAB 250Xi). Thermal stability of ICCN was investigated by TG analysis. The surface morphologies of ICCN were investigated by atomic force microscope (AFM) (SEIKO SPA-300HV). The frequency dependent capacitances of ICCN was investigated by chemical impedance analyzer (IM3590). OFETs characteristics were tested in vacuum at room temperature using Keithley 4200 semiconductor system unless specifically described. The vacuum level for the testing of the devices is around 1 × 10−4 Pa.
3
Surface Characterization of Membrane
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The surface morphology was studied by SEM (JSM-5610LV, JEOL Ltd., Peabody, MA, USA) and operated at 20 kV. The samples were platinum-sputtered for 60 s to enhance conductivity. AFM (Seiko SPA-300 HV, Tokyo, Japan) with tapping mode in air was used to investigate surface roughness. A piece of membrane (2 × 2 µm) was tested and root mean square (RMS) was reported. Sessile drop method was used to estimate the contact angle by using video system (VCA-3000S, AST products, Inc, Billerica, MA, USA) using Milli-Q DI water (pH = 7; 4 μL droplet). Each sample was tested several times and the average was reported.
4
Characterization of Amino-Acid Nanoparticles
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The dynamic
light scattering (DLS) method was applied to detect the size distribution
of AA-NPs. The particle size, polydispersity index (PDI), and ζ-potential
of AA-NPs were determined using a nanoparticle size analyzer (90plus
PALS, Bruker, Germany). The morphology of AA-NPs was visualized through
transmission electron microscopy (TEM, JEM2100F, JEOL, Japan) and
scanning electron microscopy (SEM, SPA 300HV, SEIKO, Japan). The surface
functional groups and crystallinity of AA-NPs were measured via an
infrared spectrometer (IRTracer 100, Shimadzu, Japan) and X-ray diffractometer
(Ultima IV, Rigaku, Japan), respectively.
light scattering (DLS) method was applied to detect the size distribution
of AA-NPs. The particle size, polydispersity index (PDI), and ζ-potential
of AA-NPs were determined using a nanoparticle size analyzer (90plus
PALS, Bruker, Germany). The morphology of AA-NPs was visualized through
transmission electron microscopy (TEM, JEM2100F, JEOL, Japan) and
scanning electron microscopy (SEM, SPA 300HV, SEIKO, Japan). The surface
functional groups and crystallinity of AA-NPs were measured via an
infrared spectrometer (IRTracer 100, Shimadzu, Japan) and X-ray diffractometer
(Ultima IV, Rigaku, Japan), respectively.
5
Characterization of Ir(ppy)3 and PQT-12 Films
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The surface morphology of Ir(ppy)3 film and PQT-12 on Ir(ppy)3 film was investigated by atomic force microscopy (AFM, SEIKO SPA-300HV). The cross-sectional image of the device was achieved by a scanning electron microscope (SEM, Nova Nano SEM 450). The PL spectra of the films were obtained from A F-7000 spectrophotometer (Hitachi). All electrical performances were measured by Keithley 4200 SCS in the air at room temperature. Xenon lamps and double grating monochromators (Omno 330150, Beijing NBeT, China) were utilized to offer a light source with a fixed wavelength and different intensities.
6
Characterization of CsPbI3 Nanorod Films
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The surface morphologies of the CsPbI3 nanorod films were investigated by an atomic force microscope (AFM, SEIKO SPA-300HV) operated in the tapping mode. Ultraviolet–visible (UV–Vis) absorption spectra of thin films on quartz substrates were acquired using a Cary 60 UV–Vis spectrometer (Agilent Technologies). Powder X-ray diffraction (XRD) was performed using a DX-2700 X-ray diffractometer (Dandong Haoyunan Instrument Co. Ltd) with Cu Kα radiation (1.54 Å) at 40 kV and 50 mA. Transmission electron microscopy (TEM) and high-resolution TEM (HRTEM) images were recorded with a JEOL JEM-2100F TEM operated at 200 kV. The performances of the photodetectors were studied using a Keithley 4200 SCS. Monochromatic lights with different wavelengths were provided by a 300-W xenon lamp filtered with a double-grating monochromator (Omno 330150, Beijing NBeT, China). All of the measurements were taken in air at room temperature.
7
Membrane Characterization Techniques for FO Concentration
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Membrane characterizations were conducted at the inner surface of hollow fibers to assess the membrane fouling condition during the FO concentration process. Scanning electron microscopy (SEM) (Ultra 55, ZEISS, Oberkochen, Germany) equipped with an energy dispersive spectrometer (EDS) (IE450, Oxford, Oxford, England) was used to analyze the surface morphology and elemental composition of the membrane. Atomic force microscopy (AFM) (SPA300HV, Seiko, Tokyo, Japan) was used to evaluate the surface roughness of the membrane. X-ray photoelectron spectroscopy (XPS) (PHI X-tool, Ulvac-Phi, Kanagawa, Japan) was used to further identify the membrane elemental composition.
8
Zirconia Surface Topography Analysis
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Each zirconia disc was imaged using Atomic Force Microscopy (AFM) (SPA300HV; Seiko, Tokyo, Japan). Five random 5 μm × 5 μm spots on the surface of each disc were imaged at a probe speed of 1 Hz (OMCL-TR400PSA; Olympus, Tokyo, Japan) at 256 × 256 resolution. SPI4000 software (NSK, Tokyo, Japan) was used for analyzing the image and the surface roughness. The average surface roughness (Ra) values and standard deviation for each specimen were calculated.
9
Photoresist Thin Film Fabrication
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Clusters 1 or 2 and photoresist 3, at 1.5 wt% were dissolved in 4-methylpentan-2-ol; the solution was filtered through a 0.22 μm PTFE syringe filter. The film was deposited by spin-coating at 1200 rpm for 10 s and 1600 rpm for 25 s on a silicon wafer coated with a SiO layer (THK = 100 nm). The wafer was baked at 80 °C for 60 s, respectively, for all three samples. The thickness of the thin films was in the range of 15.8–25.0 nm, which was measured by using a J. A. Woollam M2000. Atomic force microscopy (AFM) images were obtained with a SEIKO SPA-300 HV, using the contact mode. These films were also used for e-beam and EUV exposure.
10
Thin Film Fabrication for E-beam and EUV Exposure
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Cluster 3 was dissolved in 4-methyl-2-pentanol at 2.0 or 2.5 wt%; the solution was filtered through a 0.22 μm filter. The resist film was spin-coated on a SiO2-coated (THK 100 nm) Si-wafer at 1500 rpm for 10 s and 2000 rpm for 25 s. The wafer was baked at 80 °C for 60 s, respectively for clusters 1 and 2. The thickness of the thin films was in the range of 20.9–22.9 nm, which was measured with a J. A. Woollam model M2000. Atomic force microscopy images (AFM) were obtained with SEIKO SPA-300 HV, using the contact mode. These films were also used for e-beam and EUV exposure.
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