Arm200f

Manufactured by JEOL

Sourced in Japan, Germany, Czechia, United States

The ARM200F is a high-resolution electron microscope designed for advanced materials analysis. It features a field emission electron source and a robust magnetic lens system that delivers excellent imaging and analytical capabilities. The ARM200F is capable of providing high-quality, high-resolution images and detailed compositional information about a wide range of samples.

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Lab products found in correlation

Escalab 250xi, by Thermo Fisher Scientific (10 mentions) Dimension icon, by Bruker (6 mentions) Jem 2100f, by JEOL (6 mentions) D8 advance, by Bruker (5 mentions) Smartlab, by Rigaku (5 mentions) Jsm 7600f, by JEOL (5 mentions) Cary 5000, by Agilent Technologies (5 mentions) X pert pro super, by Philips (4 mentions) H 7650, by Hitachi (4 mentions) Empyrean diffractometer, by Malvern Panalytical (3 mentions) D8 discover, by Bruker (3 mentions) Su8010, by Hitachi (3 mentions) X pert pro super diffractometer, by Philips (3 mentions) Gc 2014, by Shimadzu (3 mentions) Jsm 7000f, by JEOL (3 mentions) Jem 2100, by JEOL (3 mentions) X pert pro diffractometer, by Malvern Panalytical (3 mentions) Axis ultra dld, by Shimadzu (3 mentions) Escalab 250, by Thermo Fisher Scientific (3 mentions) Esca2000 spectrometry, by Thermo Fisher Scientific (3 mentions)

186 protocols using arm200f

Characterization of Sulfide and Spent Catalysts

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The local morphology
and elemental composition of the sulfide and spent catalysts were
determined by STEM and EDX mapping using a probe-corrected JEOL ARM
200F transmission electron microscope operating at an acceleration
voltage of 200 kV. The preparation of the sulfide and spent samples
was conducted in a glovebox, specifically, around 5 mg of catalyst
sample were dispersed in n-hexane to make a suspension, a few droplets
of which was then placed on a Cu grid. The grid was then transported
to STEM. The mean length of individual MoS₂ platelets and
the average number of layers per particle were calculated from acquired
STEM images using ImageJ. The mean length was determined by fitting
a log-normal function to the platelets size distribution. The degree
of stacking (N) was calculated according to eq 4. where N_i is the number of MoS₂ layers within a particle
and n_i is the amount
of individual MoS₂ platelets counted for a given number
of layers N_i.
The
local elemental distribution in the sulfide and spent catalysts was
determined by STEM-EDX mapping using the same JEOL ARM 200F by means
of a 100 mm² (1 srad) Centurio SDD EDX detector. The correlation
between Mo and Ni was calculated via MATLAB, as shown in Figure S8, detailed information can be found
in the Supporting Information.

Li M., Ihli J., Verheijen M.A., Holler M., Guizar-Sicairos M., van Bokhoven J.A., Hensen E.J, & Weber T. (2022). Alumina-Supported NiMo Hydrotreating Catalysts—Aspects of 3D Structure, Synthesis, and Activity. The Journal of Physical Chemistry. C, Nanomaterials and Interfaces, 126(43), 18536-18549.

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Nanowire Characterization by TEM

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For the side view analysis, the nanowires were transferred from growth arrays to holey carbon grids by gently rubbing the two surfaces. The cross sections were prepared using focused ion beam (FIB) on nanowires transferred to Si substrates by the same method of gentle rubbing of surfaces. TEM analysis was carried out using doubly corrected Jeol ARM 200F and Jeol 2100 microscopes, both operating at 200 kV. The EDX measurements were carried out using an Oxford Instruments 100 mm² windowless detector installed within the Jeol ARM 200F.

Perla P., Fonseka H.A., Zellekens P., Deacon R., Han Y., Kölzer J., Mörstedt T., Bennemann B., Espiari A., Ishibashi K., Grützmacher D., Sanchez A.M., Lepsa M.I, & Schäpers T. (2021). Fully in situ Nb/InAs-nanowire Josephson junctions by selective-area growth and shadow evaporation. Nanoscale Advances, 3(5), 1413-1421.

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STEM Imaging and Elemental Mapping

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STEM images were acquired using JEOL ARM 200F equipped with a cold field emission source operated at 200 kV. STEM EDS mapping was acquired using an Oxford X-Max 100TLE windowless SDD detector equipped with JEOL ARM 200F.

Yan G., Kim G., Yuan R., Hoenig E., Shi F., Chen W., Han Y., Chen Q., Zuo J.M., Chen W, & Liu C. (2022). The role of solid solutions in iron phosphate-based electrodes for selective electrochemical lithium extraction. Nature Communications, 13, 4579.

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Thin Film Characterization Using Advanced TEM

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Thin film samples were grown via d.c. (metal layers) and r.f. (oxide layers) magnetron sputtering in an argon environment, with a base pressure of 7 × 10⁻⁹ torr. TEM measurements were performed at the Brookhaven National Laboratory, using both a specially designed JEOL 2100F-LM and a JEOL ARM 200F microscope. Zero-field imaging was performed in the JEOL 2100F-LM, which has a residual out-of-plane field in the specimen area of <0.4 mT and a spherical aberration coefficient, C_s, of 109 mm. Reversal experiments were carried out in the JEOL ARM 200F, in which the out-of-plane magnetic field was tuned by varying the strength of the microscopes objective lens. The magnetic field at a given objective lens current was determined by mounting a Hall probe onto a TEM sample holder and measuring the Hall signal as the objective lens current was varied. Principal component analysis was used to smooth the EELS line profiles with a Savitzky–Golay filter.

Pollard S.D., Garlow J.A., Yu J., Wang Z., Zhu Y, & Yang H. (2017). Observation of stable Néel skyrmions in cobalt/palladium multilayers with Lorentz transmission electron microscopy. Nature Communications, 8, 14761.

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Epitaxial Thin Film Deposition and Characterization

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The epitaxial thin films were deposited by pulsed laser deposition, the ceramic target of Sr₃Al₂O₆ was prepared by solid‐state reaction method,^[³⁷, ³⁸, ³⁹^] and the ceramic targets of BiFeO₃ and SrRuO₃ were commercially available. Sr₃Al₂O₆, SrRuO_3, and BiFeO₃ thin films were deposited sequentially on SrTiO₃ substrates using a KrF excimer laser with a wavelength of 248 nm. The Sr₃Al₂O₆ layer was grown at 750 °C under an oxygen pressure of 15 Pa, the energy density was ≈0.8 J cm⁻² and the repetition rate was 3 Hz. The SrRuO₃ layer was grown at 650 °C under an oxygen pressure of 20 Pa, the energy density was ≈0.8 J cm⁻² and the repetition rate was 3 Hz. The BiFeO₃ layer was grown at 600 °C under an oxygen pressure of 1 Pa, the energy density was ≈0.7 J cm⁻² and the repetition rate was 5 Hz.
High‐resolution X‐ray diffraction measurements (θ‐2θ scan) were conducted by a PANalytical Empyrean diffractometer. The surface morphology was characterized by atomic force microscopy (Bruker Icon). Atomic‐resolution high‐angle annular dark‐field (HAADF) and annular bright‐field (ABF) images were obtained on a JEOL ARM200F microscope with CS‐corrected STEM operated at 200 kV.

Ou Z., Peng B., Chu W., Li Z., Wang C., Zeng Y., Chen H., Wang Q., Dong G., Wu Y., Qiu R., Ma L., Zhang L., Liu X., Li T., Yu T., Hu Z., Wang T., Liu M, & Xu H. (2023). Strong Electron‐Phonon Coupling Mediates Carrier Transport in BiFeO3. Advanced Science, 10(22), 2301057.

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Comprehensive Material Characterization Protocol

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X-ray powder diffraction (XRD) was performed with a D8 Advance diffractometer (Bruker) equipped with a Cu Kα radiation. X-ray photoelectron spectroscopy (XPS) experiments were carried out using photoelectron spectrometer (K-Alpha+) with a monochromatic Al Ka X-ray (1486.6 eV) source. All spectra were calibrated according to the C 1s binding energy at 284.8 eV. Scanning electron microscopy was carried out using a field emission microscope (SEM, S-4800) operated at 20 kV. Transmission electron microscope (TEM) was conducted using JEOL-2100F and JEOL ARM200F microscope. TEM samples were prepared by depositing a droplet of suspension onto a Cu grid coated with a Lacey Carbon film.

Fan Q., Bao G., Liu H., Xu Y., Chen X., Zhang X., Li K., Kang P., Zhang S, & Ma X. (2024). Boosting CO2 electrocatalysis through electrical double layer regulations. iScience, 27(3), 109060.

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Characterization of Sb2S3 Bulks and Nanosheets

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The microstructure/morphology of the as-prepared Sb₂S₃ bulks and nanosheets was investigated by XRD (GBC MMA) with Cu Kα radiation; field-emission SEM (FESEM) (JEOL 7500); TEM (JEOL ARM-200F) with high-resolution TEM (HRTEM), and Raman spectroscopy (Jobin Yvon HR800) employing a 10 mW helium/neon laser at 632.8 nm. A commercial AFM (Asylum Research MFP-3D) was used to measure the morphology and thickness of the SBS nanosheets in trapping mode. An Al coated n-silicon probe with resonance frequency of 204–497 kHz and force constant of 10–130 N m⁻¹ was used in the AFM measurements. For synchrotron X-ray powder diffraction, a specially modified CR2032 coin cell was used with holes on both sides. In situ synchrotron XRD measurements were then performed at the Powder Diffraction beamline (Australian Synchrotron), and the XRD patterns were conducted at 0.688273 Å (determined using LaB₆, NIST SRM 660b).

Liu Y., Tai Z., Zhang J., Pang W.K., Zhang Q., Feng H., Konstantinov K., Guo Z, & Liu H.K. (2018). Boosting potassium-ion batteries by few-layered composite anodes prepared via solution-triggered one-step shear exfoliation. Nature Communications, 9, 3645.

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Atomic-Resolution Characterization of Functional Materials

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Plan-view specimens were prepared by polishing the samples using a mechanical tripod followed by argon ion milling from the substrate side at 8 kV using Leica EM RES102 Ion Mill. Cross-sectional lamellas were prepared using focused ion beam (FIB) milling (FEI Versa 3D microscope). The samples were thinned using successive milling by 30 kV, 8 kV, and 5 kV ion beams where a 2 kV beam was used for final cleaning. STEM imaging and ELNES measurements were done using a JEOL ARM200F atomic resolution electron microscope equipped with a cold field emission gun, an ASCOR 5th order aberration corrector, and a Gatan Quantum ER spectrometer under an acceleration voltage of 200 kV. 10 – 15 images were taken from a single region and averaged for both HAADF and ABF images which were then average-background-subtraction filtered (ABSF)^{45 (link)} for improved contrast. Atomic displacements were measured using a prewritten script^{46 (link)} on MATLAB. Atomic models were made using Vesta software^{47 (link)}. Due to the atomic number (Z) dependence of HAADF and ABF imaging mode, Nb columns (Z = 41) show higher contrast compared to K/Na (Z = 11/19) and O (Z = 8) columns which are less noticeable.

Waqar M., Wu H., Ong K.P., Liu H., Li C., Yang P., Zang W., Liew W.H., Diao C., Xi S., Singh D.J., He Q., Yao K., Pennycook S.J, & Wang J. (2022). Origin of giant electric-field-induced strain in faulted alkali niobate films. Nature Communications, 13, 3922.

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Graphene Oxidation and Electrical Characterization

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After the oxidation of graphene on the Cu foil, surface images were acquired with OM (Olympus BX50). To identify the dark contrast of OM image, scanning electron microscope and Energy-dispersive X-ray spectroscopy (Merlin Compact, ZEISS) was conducted. The cross-sectional microstructure of graphene on Cu after oxidation was observed using Cs-corrected TEM (ARM 200F, JEOL Ltd.). The as-grown and heat-treated graphenes on Cu were transferred on a polymethyl methacrylate (PMMA) supporting layer in order to investigate the electrical properties of graphene. The PMMA was spin coated onto the graphene on Cu and then the underlying Cu was wet etched in imidazole-based Cu etchant (ammonium persulfate (0.1 M) + H₂SO₄ + H₂O₂). Thus, the graphene was simultaneously doped during the etching of Cu.^{29 (link)} The floated PMMA/graphene layer was scooped after 8 hours of complete Cu etching onto PET. Finally, the top PMMA layer was removed by acetone. The graphene electrical properties, i.e., sheet resistance, Hall mobility, and sheet carrier density, were measured by using a van der Pauw structure of 8 × 8 mm². Hall measurements were performed under a 0.5 T magnetic field (HL 5500PC, BIO-RAD) at room temperature.

Kim M.S., Kim K.J., Kim M., Lee S., Lee K.H., Kim H., Kim H.M, & Kim K.B. (2020). Cu oxidation kinetics through graphene and its effect on the electrical properties of graphene. RSC Advances, 10(59), 35671-35680.

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Characterization of Heterostructure Optical and Electrical Properties

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The optical images of heterostructures were characterized using optical microscopy (Zeiss Axio Scope A1). The optical measurements (PL and Raman) were performed with the confocal-PL system (WITec, alpha-300). A 520 nm solid state laser (power: about 5 mW, spot size: 1–2 μm) was used to excite the samples. For atomic-structural characterizations measurements, The STEM and EDS measurements were carried out on JEOL ARM200F microscope operated at 200 kV and equipped with a probe-forming aberration corrector. Standard e-beam lithography (EBL, Raith 150) and metal thermal evaporation were performed to fabricate the Au/Cr (10 nm/50 nm) electrodes on the produced heterostructures. The electrical and optoelectronic properties of the heterostructures were measured in vacuum with Lake Shore Probe Station and Agilent B1500A semiconductor analyzer at room temperature.

Li F., Chen M., Wang Y., Zhu X., Zhang X., Zou Z., Zhang D., Yi J., Li Z., Li D, & Pan A. (2021). Strain-controlled synthesis of ultrathin hexagonal GaTe/MoS2 heterostructure for sensitive photodetection. iScience, 24(9), 103031.

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