We used commercially available Li2MnO3 single crystals (Oxide Corp.), which are plate-shaped with a radius of 1.5 mm and a thickness of 10 μm (Supplementary Note 2 and Supplementary Figs. 3 and 4 show the sample characterization). A single crystal was mechanically cleaved by tweezers to expose fresh surfaces, and the obtained pieces were immersed in 20 ml acetonitrile solution of the NO2BF4 oxidizer with a concentration of 0.3 mol L−1 for 16 h in Ar atmosphere. After cleaning the samples three times by acetonitrile, the electron-transparent thin specimens for cross-sectional S/TEM observation were prepared by a focused ion beam (FIB) technique using NB5000 (Hitachi High-Technologies Co.) or Helios G4 (Thermo Fisher Scientific). Possible damage layers created by the Ga-ion beam in the FIB technique were removed by gentle Ar ion milling at 0.1–0.5 kV in PIPS II (Gatan, Inc.).
Pips 2
Manufactured by Ametek
Sourced in United States
The PIPS II is a precision instrument performance system designed for the calibration and performance verification of various electronic instruments and equipment. It provides a reliable and accurate means of testing and validating the functionality of laboratory and industrial devices.
Automatically generated - may contain errors
Lab products found in correlation
Helios g4, by Thermo Fisher Scientific (1 mentions)
Nb5000, by Hitachi (1 mentions)
Talos 200x, by Thermo Fisher Scientific (1 mentions)
Axis ultra dld, by Shimadzu (1 mentions)
Lambda 1050, by PerkinElmer (1 mentions)
Jem 300cf, by JEOL (1 mentions)
2100f microscope, by JEOL (1 mentions)
Microscopy suite software, by Ametek (1 mentions)
Themis z, by Thermo Fisher Scientific (1 mentions)
Helios g4 cx, by Thermo Fisher Scientific (1 mentions)
Jem 2100f, by JEOL (1 mentions)
Spectra 200, by Thermo Fisher Scientific (1 mentions)
Jsm it800, by JEOL (1 mentions)
Arm200cf, by JEOL (1 mentions)
Em txp, by Leica (1 mentions)
Jem arm200f, by JEOL (1 mentions)
Arm200f, by JEOL (1 mentions)
16 protocols using pips 2
1
Preparation of Li2MnO3 Single Crystals
2
Structural and Optical Characterization of LSC Films
Check if the same lab product or an alternative is used in the 5 most similar protocols
+ Expand
The crystallinity and microstructure of the films were investigated by XRD (PANalytical Empyrean XRD), TEM and high-resolution STEM (FEI TALOS 200X operated at 200 kV). TEM samples were prepared using the standard manual grinding and thinning process followed by dimpling and ion milling using a precision ion polishing system (PIPS II, Gatan). Transmission measurements were obtained using a UV-vis-NIR absorption spectrophotometer (PerkinElmer Lambda 1050). The chemical composition of the LSC films was investigated using FEI Nova NanoSEM and XPS (Kratos Axis Ultra DLD) with monochromatic Al Kα radiation (1486.6 eV).
3
Atomic-Scale Characterization of Ferroelectric Thin Films
Check if the same lab product or an alternative is used in the 5 most similar protocols
+ Expand
TEM specimens were prepared by mechanical polishing followed by argon ion milling using Gatan PIPS II. STEM HAADF imaging and EDS experiments were carried out on a JEOL JEM-300CF (Grand ARM) equipped with a cold field emission gun and double spherical aberration correctors with a spatial resolution of 0.6 Å operating at 300 KV in Irvine Materials Research Institute at the University of California, Irvine. STEM-HAADF images were taken with the convergence angle of the incident electrons at 32 mrad and the collection angle at 90–165 mrad. EDS mappings were acquired using dual silicon-drift detectors (SDDs). 50 scans (each with a 0.4 ms dwell time) in the same area across the interface were summed. The high resolution HAADF STEM imaging provides spatial resolution adequate to measure the atomic positions of the A and B site cations of BTO. The high frequency noise was removed by applying an annular mask in frequency space, and then the initial peak positions were determined by identifying local maxima and refined by fitting Gaussian curves to obtain the atom center positions. Displacements were calculated as the difference between the center of each cation and the center of mass of its for adjacent neighbors. Strain analysis is based on GPA39 (link) that preinstalled in Gatan Digital Micrograph software.
4
Scanning Transmission Electron Microscopy
Check if the same lab product or an alternative is used in the 5 most similar protocols
+ Expand
Scanning transmission electron microscopy was carried out using a JEOL 2100F microscope at 200 kV. Sample preparation was carried out by mechanical polishing and ion milling on a Gatan PIPS II. Collected high-angle annular dark field (HAADF) images were treated and Fourier-filtered using the Gatan Microscopy Suite software.
5
Preparing Plan-view TEM Samples of Flash-Sintered 3YSZ
Check if the same lab product or an alternative is used in the 5 most similar protocols
+ Expand
Plan-view TEM samples of flash-sintered 3YSZ were prepared through the conventional approach, which includes manual grinding, polishing, dimpling, and final polishing in an ion milling system (PIPS II, Gatan). Low energy ion polishing (2 kV) was used to minimize ion milling-induced damage. An FEI Talos 200X TEM/STEM with ChemiSTEM technology (X-FEG and SuperX EDS with four silicon drift detectors) operated at 200 kV was used in this study for microstructure characterization and energy-dispersive X-ray spectroscopy (EDS) chemical mapping.
6
Atomic-scale Characterization of GST
Check if the same lab product or an alternative is used in the 5 most similar protocols
+ Expand
Cross‐sectional specimens were prepared with a Thermo Fisher Scientific Helios G4 CX, using gradually decreasing acceleration voltages of 30, 5, and 2 kV. In the final step the specimen was polished for 40–80 s at 0.2 kV on both sides with Ar+ using a Gatan PIPS II. TEM analyses were performed with a double aberration corrected FEI Themis Z, operated at 300 kV. HAADF‐STEM images were recorded with a probe current of 50 pA, convergence semi‐angle 21 mrad and HAADF collection angles 61–200 mrad. For better visibility, micrographs in panels (b) and (c) of Figure 5 were filtered with the average background subtraction filter, freely available at http://www.dmscripting.com/hrtem_filter.html . Details about GPA analysis are reported in the Supporting Information. For the analysis in Figure 1 , the atomic positions were first fitted in orthogonally rotated defect‐free portions of the GST lamellae. Then, the atomic plane distance profiles were calculated for each atomic chain along the direction indicated by the black arrow and averaged. The errors in the numerical fitting of the atomic positions are shown in Figure 1 and Figure S1 , Supporting Information.
7
Preparing Cross-Sectional TEM Samples
Check if the same lab product or an alternative is used in the 5 most similar protocols
+ Expand
FEI Nova NanoLab 600 dual-beam scanning electron microscopy (SEM) and focused ion beam (FIB) system were used to prepare cross-sectional TEM samples. A 1-μm-thick carbon layer was initially deposited (by electron beam–induced deposition) on top of the device to protect the sample surface, followed by 2-μm ion beam–induced Pt deposition. To reduce Ga ions damage, in the final step of FIB preparation, the TEM samples were thinned with 2-kV Ga ions using a low beam current of 29 pA and a small incident angle of 3°. The surface damage of the samples was further reduced using a precision ion polishing system (Gatan PIPS II) with 0.1-kV Ar ions.
8
In-Situ TEM Observation under Electric Field
Check if the same lab product or an alternative is used in the 5 most similar protocols
+ Expand
The in situ domain morphology observation and selected area electron diffraction (SAED) under varying electric fields were carried out on a field-emission transmission electron microscope (FE-TEM, JEM-2100F, JEOL, Japan) operated at 200 kV with a home-developed electric-holder. Specimens for TEM measurement were prepared by a conventional approach combining mechanical thinning and, finally, Ar+ ion-milling in a Gatan PIPS II.
9
Transmission Electron Microscopy of Nanowires
Check if the same lab product or an alternative is used in the 5 most similar protocols
+ Expand
For the conventional TEM imaging and DIH experiments, two different TEM samples were prepared. First, cross‐sectional TEM samples were prepared by the conventional mechanical dimpling method. The dimpled samples were ion‐milled using a 3 keV Ar+ ion beam (PIPS II, Gatan, Inc.) and later using a low energy Ar+ ion beam. For more detailed analyses of individual NWs, NW ensembles were mechanically detached from the substrate and directly transferred onto a lacey carbon TEM grid.
10
Preparing TEM Samples for O-K EELS
Check if the same lab product or an alternative is used in the 5 most similar protocols
+ Expand
TEM samples for O-K EELS were prepared by grinding using tripod polisher and ion milling employing a Gatan precision ion polishing system II (PIPS II). 4° and 0.5 kV were used for final milling.
About PubCompare
Our mission is to provide scientists with the largest repository of trustworthy protocols and intelligent analytical tools, thereby offering them extensive information to design robust protocols aimed at minimizing the risk of failures.
We believe that the most crucial aspect is to grant scientists access to a wide range of reliable sources and new useful tools that surpass human capabilities.
However, we trust in allowing scientists to determine how to construct their own protocols based on this information, as they are the experts in their field.
Ready to get started?
Sign up for free.
Registration takes 20 seconds.
Available from any computer
No download required
Revolutionizing how scientists
search and build protocols!