B2912a source meter

The devices are measured in nitrogen atmosphere. Static characterization is performed via an Agilent B1500A Semiconductor Parameter Analyzer. Frequency performance was measured using a custom setup which includes an Agilent ENA Vector Network Analyzer and an Agilent B2912A Source Meter. More details on the setup can be found in Supplementary Information.

The UV–vis–NIR absorption spectra of solution samples were carried out with UV‐3600PLUS (SHIMADZU), and the film morphologies were characterized by Park XE‐7 AFM. The cross‐section SEM images were characterized by a Zeiss 500 with the extra high tension of 10 kV. TEM measurements were performed by a Tecnai G2 F20 S‐Twin system operated at 200 kV. The electrical current of the devices was measured by an Agilent B2912A source meter with a probe station located in glove box. The temperature measurements of field‐effect transistors were done in a Lakeshore TTPX probe station.
Steady‐state PL spectra were measured using the same confocal microscope but with 510 nm continuous‐wave laser as the excitation. TRPL experiments were performed using a confocal microscope (WITec, alpha‐300) as the collect device, and the emission signal was reflected into a streak camera (C10910, Hamamatsu) by Ag mirrors. The laser beam was focused on to the sample with a spot diameter of ≈3 µm from the top by an objective lens (50×, Zeiss, 0.75 NA), while PL emission was collected by the same objective lens.