Titan3 themis g2

All samples were examined in an FEI Titan³ Themis G2 operated at an accelerating voltage of 300 kV, equipped with a field emission gun (X‐FEG) operating at an extraction voltage of 4.5 kV and a monochromator. HR images and diffraction patterns were acquired using a Gatan OneView CMOS camera and an FEI BF‐STEM detector was used to acquire SMF images. The pixel size at each magnification and diffraction pattern had previously been calibrated using a standard of gold nanoparticles on graphite.
The electron flux in CTEM was controlled by adjusting the monochromator focusing lens and the C2 condenser lens and was set to 0.08 e⁻/(Ų s) when searching for areas of interest at low magnification and acquiring selected area electron diffraction (SAED) patterns. In STEM, the total electron fluence per image was controlled by altering the magnification, reducing the probe current to 5 pA using the monochromator focusing lens and setting the dwell time per pixel to 10 µs. The electron flux and measured probe current in CTEM and STEM were based on a flu‐cam current reading which had been previously calibrated using a Faraday cup, and therefore reported uncertainties in the electron flux and probe current measurements are readout error from the flu‐cam. In TEM, this corresponds to ±0.01 e⁻/(Ų s) and in STEM ±1 pA.

ENM cellular uptake was confirmed by TEM imaging. TT1 cells, the primary focus of this study were exposed to ENM were fixed, embedded, sectioned and imaged as previously described [27 (link)]. The analysis was performed with a FEI Titan3 Themis G2 operating at 300 kV fitted with 4 EDX silicon drift detectors, and a Gatan One-View CCD. EDX spectroscopy and mapping to identify potential heavy metal contamination was undertaken using Bruker Esprit v1.9 software.

The crystal structures as‐prepared Bi₂Te₃ films were characterized by X‐ray diffraction (XRD, D/max 2500 Rigaku Corporation, CuKα radiation). The surface morphology and cross‐section microstructures were investigated by SEM (Zeiss supra 55). The compositions of Bi₂Te₃ films are analyzed by an EDS (Bruker Quantax 200). Samples for cross‐sectional TEM analysis were fabricated by a dual‐beam SEM‐FIB (focused ion beam, Scios, FEI). The crystal structures of as‐prepared Bi₂Te₃‐based flexible thin films were also investigated by the transmission electron microscope (TEM, FEI, Titan3 Themis G2). The chemical bonding was investigated by Raman spectra measurement system (Horiba Jobin Yvon). X‐ray photoelectron spectroscopy (XPS, Thermo Escalab 250XI) was used to study the valence states of the composing elements. Carrier concentration (n_e) and mobility (µ) values were recorded from the Hall measurement system (HL5500PC, Nano metrics). The σ and S of Bi₂Te₃ film were simultaneously measured by the SBA458 (Nezsch). The error bars of the measured data were determined from the SBA458 (5% for S, 5% for σ, and 10% S²σ).