For demonstrating wireless actuation, two different homespun solenoid-inductive antennas were made using 24-gauge silver plated copper wire (OD: 0.031 inches, Lapp Tannehill) to inductively couple power. They were characterized using an LCR meter (4284 A Precision LCR Meter, Hewlett Packard) and a caliper (AOS Absolute Caliper, Mitutoyo). The primary coil used for transmitting power had a measured inductance of 10.1 µH (number of turns = 10, diameter = 3.6 cm, height = 0.3 cm, and quality factor = 25). The secondary coil used for collecting power was electrically connected to our device and had a measured inductance of 51.9 µH (number of turns = 30, diameter = 3.5 cm, height = 0.6 cm, and quality factor = 50).
4284a precision lcr meter
Manufactured by Hewlett-Packard
Sourced in United States
The 4284A Precision LCR Meter is a high-performance instrument used for measuring the impedance characteristics of electronic components and devices. It is capable of measuring inductance (L), capacitance (C), and resistance (R) with a high degree of accuracy and precision.
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Lab products found in correlation
6 protocols using 4284a precision lcr meter
1
Wireless Inductive Power Transfer
2
Capacitance Measurements of MIP-Coated Electrodes
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Capacitance measurements of the MIP-coated, planar interdigitated electrode array was carried out using a Hewlett Packard 4284A Precision LCR meter. Measurements were taken with an Alternating Current (AC) at a potential of 1.0 V root mean square (RMS) and a frequency of 1.0 kHz. An average of 100 recorded measurements were taken per sample and repeated in triplicate to provide error analysis. The LCR meter was connected to the electrode device contact pads using clips that were attached to four coaxial cables interfacing into the meter to provide analysis using the high potential, low potential, high current, and low current ports on the LCR terminal.
3
Perovskite Device Impedance Spectroscopy
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IS measurements were performed using the Hewlett Packard 4284A Precision LCR Meter providing voltage modulation in the desired frequency range. The running program was edited with MATLAB R2003. The Z-view software (v2.8b, Scribner Associates Inc.) was used to analyze the impedance data. The IS experiments were performed at a constant temperature of 20°C under illumination with various intensities. The impedance spectra of the perovskite devices were recorded at potentials in the range of VOC ± 0.1 V at frequencies ranging from 20 Hz to 1 MHz, the oscillation potential amplitudes being adjusted to 30 mV. The ITO electrode was used as the working electrode, and the Au electrode (CE) was used as both the auxiliary electrode and the reference electrode.
4
Characterizing Pressure Sensor Capacitance
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A pressure sensor was characterized by measuring applied force and resulting capacitance changes using a force gauge (Series 5, Mark-10) and an LCR meter (4284A Precision LCR Meter, Hewlett Packard), respectively. The sensor was placed on a mechanical test platform (ESM303, Mark-10), and the force was applied perpendicularly to the sensor with a rate of 10 mm/min. The applied pressure was calculated by dividing the measured force by the contact area. The effective modulus of the gallium-elastomer composite was calculated by the slope of the stress versus strain curve. The dynamic range of the sensor was calculated by the applied pressure until the sensitivity is lower than 1% of the onset sensitivity. A custom-developed LabVIEW software was used for automated measurements of capacitance changes per applied pressure.
5
Optical Characterization of Ta2O5 Transistor
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The optical microscope image of the fabricated Ta2O5 barrier-layered chitosan EDL transistor was analyzed using an SV−55 Microscope System (SOMETECH, Seoul, Korea). The frequency-dependent specific capacitance of Ta2O5–chitosan electrolyte EDL capacitor was analyzed using an 4284A Precision LCR meter (Hewlett-Packard Co., Palo Alto, CA, USA). The Transfer and output characteristics and synaptic behavior of Ta2O5 barrier-layered chitosan EDL transistor were measured using an Agilent 4156B Precision Semiconductor Parameter Analyzer (Hewlett-Packard Co., USA). The device measurement was conducted on a probe station in a dark box to avoid any light and electrical noises. To apply a presynaptic spike, electrical pulses were applied by Agilent 8110A Pulse Generator (Hewlett-Packard Co., USA).
6
Resistance Measurement of Sensitive MIP Layers
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The resistance of the sensitive layer (after template removal) coated on IDT was measured by placing it in a glass cell having a supporting electrolyte as shown in Figure 1 . The stock solution of analytes was added into the glass cell having 50 mL of supporting electrolyte to obtain final medium. Hewlett-Packard 4284A precision LCR meter (20 Hz–1 MHz) was operated in an AC mode to measure resistance of sensitive layers. The surface and the thickness of the MIP layers were measured with a VEECO Nanoscope IVa atomic force microscope.
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