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75 protocols using invia reflex

1

Raman Spectroscopy of PA66 Residual Chars

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The Raman spectra of PA66 and the PA66/Di−PE composites residual chars were obtained with a laser Raman spectrometer (Renishaw inVia Reflex, Renishaw Co., Miskin, UK) using a 532 nm helium–neon laser line focused on a micrometer spot on the sample surface and scanning in the 2000–800 cm−1 region.
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2

Raman Spectroscopy for Organic Matter Analysis

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The dispersive Raman spectrometer was very useful in identifying organic matter. The inVia Reflex instrument (produced by Renishaw plc, UK) was applied to establish the identity of some chemical entities. As a source, the ion argon laser emitting light of wavelength 514 nm was in use. The initial power of 20 mW was applied. The laser was conventionally air-cooled. The spectral resolution for the laser was <1 cm−1. Due to the presence of inorganic and organic components, we decided to study the wide spectral range of 200-3600 cm−1. The lens concentrated the laser beam on the sample in 2 μm wide spots. For the control of deposited laser energy on the sample, a set of neutral gray filters was applied. The thermoelectrically cooled CCD detector was used for the collection of spectra. The initial treatment of the data was made using the Wire2 computer program and finished with Origin 8 software. The main Raman bands of interest were as follows: ν (C=O) amide I β-sheet at ~1667 cm−1; ν (C=O) amide I α-helix at ~1653 cm−1; ν (C-C) in the aromatic ring at 1003 cm−1; ν (S-S) at 507 cm−1; ν (C-S) at 643 cm−1.
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Comprehensive Characterization of Porous SBCA

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SEM (FEI‐Apreo) was applied to observe the surface morphology of SBCA. The phase composition of SBCA was characterized by XRD (D8 advance) and the data were analyzed by MDI‐Jade 6 software. A Raman spectrometer (Renishaw inVia Reflex) with excitation wavelength of 532 nm was used to characterize the graphitization degree of the sample. X‐ray Photoelectron Spectrometer (XPS) (Thermo ESCALAB 250XI) was applied to determine the composition and chemical valence of porous SBCA. The groups on the sample surface were evaluated by FT‐IR spectroscopy (Vertex 70). The reflection spectrum of the light absorber in the wavelength range of 200–2500 nm was tested by the UV–visible‐near infrared spectrophotometer with the model Carry 5000. Further, the absorbance of SBCA can be calculated by the equation A = 1‐R‐T, where R and T represent the reflectance and transmittance of the sample, respectively.
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Raman Analysis of PAN Fiber

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Raman measurements were carried out with Invia Reflex produced by Renishaw Corporation. The laser operated at 532 nm with a power of 5 mW. The exposure time was 10 s. Fig. 2 is the schematic of cross-section of PAN fibre with 100 μm diameter under the microscope equipped by Raman spectroscopy (the area bounded by the dot line). The sample was scanned in the direction parallel to the laser beam which was carried out with a step size of 10 μm.
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5

Raman Spectrum Acquisition Protocol

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The Raman spectrum was performed on Raman InVia Reflex (Renishaw, United Kingdom) spectrometer using a laser of 785 nm wavelength. The laser power at the sample measuring was 5% and the WiRE spectral acquisition wizard generated a single scan measurement. The exposure time was set to 30.000s. Each spectrum was adjusted to account for the detecting system non-uniform spectral response; Renishaw Centrus 1C4A91 detector was applied to smooth the spectra.
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6

Confocal Raman Microspectroscopic Analysis of DPI Formulations

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Confocal Raman microspectroscopy (CRM) provides noninvasive and nondestructive microspectroscopic component analysis of DPI formulations. Using similar conditions previously reported38 (link), 39 (link), 46 (link), 47 , Raman spectra was obtained at 514 nm laser excitation using Renishaw InVia Reflex (Gloucestershire, UK) at the surface using a 20× magnification objective on a Leica DM2700 optical microscope (Wetzlar, Germany) and equipped with a Renishaw inVia Raman system (Gloucestershire, UK). This Renishaw system has a 2400 l/mm grating, with a slit width of 65 µm and a thermoelectrically cooled Master Renishaw CCD detector. The laser power was adjusted to achieve 5000 counts per second for the 520 cm−1 line of the internal Si Reference. Raman spectral map was obtained with the stage moved in increments of 20×20 µm in each axis. Each map point was acquired 1 accumulation using 2 s of detector exposure time per accumulation. Spectra were subjected to baseline correction prior to further analysis.
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7

Characterization of PtSe2 Nanosheets

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The morphology and thickness of PtSe2 nanosheets were acquired by an optical microscope (DP27, OLYMPUS) and atomic force microscope (Bioscope system, BRUCKER). The structure of PtSe2 nanosheets was conducted by Raman spectroscopic (invia‐reflex, Renishaw), XRD (D8‐Advance, Bruker), TEM (JEM‐2100F, JEOL), and STEM (Titan Cubed Themis G2300).
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8

Comprehensive Characterization of Carbon Dots

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UV-Vis absorption spectra were recorded on a Cary 60 Spectrophotometer (Agilent Technologies, USA). FTIR spectra were obtained on Cary 660 ATR-FTIR connected to ATR (Agilent technologies, USA). Photoluminescence spectra were recorded on Cary Eclipsed Fluorescence Spectrophotometer (Agilent Technologies, USA). High-resolution transmission electron microscopy (HR-TEM) was applied to observe the morphology and size of CDs, which was carried out using TECNAI G2 F20 microscope (Ames Lab, USA) at 200 kV. The surface and core chemical composition of the CDs were examined by X-ray photoelectron spectroscopy (XPS) using Thermo Escalab 250 XI (Thermo Scientific, USA). The Raman spectra were generated using inVia Reflex (Renishaw, UK) with an Nd:YAG laser source at 785 nm. X-ray diffraction (XRD spectra were obtained on Empyrean X-ray diffractometer, (PANalytical, Netherland). Samples for XRD were prepared by casting few drops of CDs on a glass slide, then drying by a heater with temperature 60 °C.
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9

Comprehensive Material Characterization Protocol

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The morphology of as-prepared samples was investigated by scanning electron microscopy (SEM, Hitachi S-4800) and transmission electron microscopy (TEM, JEM-2100F). X-ray diffraction (XRD) patterns were collected by a D/max-2550 PC XRD (Rigaku, CuKα radiation). X-ray photoelectron spectroscopy (XPS) spectra were obtained using Escalab 250Xi. The nitrogen adsorption/desorption isotherms were measured by ASAP 2020 instrument and the specific area was calculated by the BET method. Thermogravimetric analysis (TGA) was conducted in N2 using Discovery TGA Q5000IR from 50 to 500 °C at a heating rate of 5 °C min−1. The Raman spectra were measured by InVia Reflex (Renishaw) with a 532 nm laser.
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10

Graphene Film Characterization Techniques

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Surface morphology and mechanical properties of suspended graphene film were characterized by Raman spectroscopy (Renishaw inVia Reflex with laser excitation energy of 532 nm, Renishaw, London, UK), cold field emission scanning electron microscopy (SEM, S4800, 4 kV, Hitachi, Tokyo, Japan), polarized optical microscopy (POM, BX51, OLYMPUS, Tokyo, Japan), scanning probe microscope (SPM, Bruker Dimension ICON Billerica, MA, USA).
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