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Grand arm300cf

Manufactured by JEOL

The Grand ARM300CF is a high-performance analytical electron microscope designed for advanced materials research and characterization. It features a cold field emission gun, high-resolution imaging capabilities, and a comprehensive suite of analytical tools to enable detailed study of a wide range of materials at the nanoscale.

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3 protocols using grand arm300cf

1

Atomic-Scale Imaging of Polar Cations

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STEM HAADF imaging was carried out on JEOL Grand ARM300CF equipped with a cold field-emission gun and double spherical aberration correctors with a spatial resolution of ~0.7 Å operating at 300 keV in Irvine Materials Research Institute at the University of California, Irvine. STEM images were taken with the convergence angle of the incident electrons at 32 mrad and the collection angle at 90 to 165 mrad.
The high-resolution HAADF STEM imaging provides spatial resolution adequate to measure the atomic positions of the A and B site cations of CGB. The high-frequency noise was removed by applying an annular mask in frequency space, and then the initial peak positions were determined by identifying local maxima and refined by fitting Gaussian curves to obtain the atom center positions. Displacements were calculated as the difference between the center of each cation and the center of mass of its adjacent neighbors.
Cs and Ge atomic positions were measured by using 2D Gaussian fitting on their atomic columns to locate centers and record offsets. The polarization vectors on Ge are defined as the displacement of Ge atom from the center of unit cell formed by the four Cs and four Br atoms. The polarization vectors on Cs are defined as the opposite displacement of Cs atom from the center of the unit cell formed by the four Ge and four Br atoms.
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2

Comprehensive Analytical Characterization Protocol

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Analytical thin-layer chromatographies were performed using aluminium-coated Merck Kieselgel 60 F254 plates. NMR spectra were recorded on a Bruker Avance 400 (1H: 400 MHz; 13C: 100 MHz) spectrometers at 298 K, using partially deuterated solvents as internal standards. Coupling constants (J) are denoted in Hz and chemical shifts (δ) in ppm. Electrospray ionization mass spectrometry and matrix-assisted laser desorption ionization (coupled to a time-of-flight analyzer) experiments were recorded on a HP1100MSD spectrometer and a Bruker REFLEX. TGA were performed using a TA Instruments TGAQ500 with a ramp of 10 °C min−1 under air from 100 to 1000 °C. TEM images were obtained with JEOL-JEM 2100F instrument or a JEOL-JEM GRAND ARM300cF (AC-HRTEM). AFM images were acquired using a JPK NanoWizard II AFM working in dynamic mode. NT-MDT NSG01 silicon cantilevers, with typical values of 5.1 N m–1 spring constant and 150 kHz resonant frequency, were employed under ambient conditions in air. TRXF analyses were performed on a TXRF 8030c - FEI Spectrometer. Raman spectra were acquired with a Bruker Senterra confocal Raman microscope instrument equipped with 532, 633, and 785 nm excitation lasers. UV-vis-NIR spectra were performed using a Shimadzu UV-VIS-NIR Spectrophotometer UV-3600. PLE intensity maps were obtained with NanoLog 4 HORIBA instrument.
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3

Atomic-scale Structural Analysis of In2Mo6Te6

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HAADF-STEM images
and subsequent EDS elemental mapping were obtained
using an aberration-corrected JEOL Grand ARM 300CF equipped with a
dual 100 mm2 SDD operated at 300 kV. The fast Fourier transform
(FFT) of the HAADF-STEM images was created using ImageJ software and
indexed with a simulated diffraction pattern of In2Mo6Te6 using the SingleCrystal software.
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