X pert3 mrd

The 50 nm thick Pb[Zr_0.2Ti_0.8]O₃ film and the 10 nm thick SrRuO₃ electrode were grown on (001)-oriented SrTiO₃ (CrysTec) using pulsed-layer deposition with a KrF excimer laser at 248 nm (LPXpro, Coherent). SrRuO₃ was grown at a substrate temperature of 700 °C with an O₂ partial pressure of 0.1 mbar and a laser fluence of 0.95 J cm⁻² at 4 Hz. Pb[Zr_0.2Ti_0.8]O₃ was grown at 550 °C at 0.12 mbar O₂ partial pressure and a laser fluence of 1.2 J cm⁻² at 4 Hz. The film was subsequently cooled to room temperature under growth pressure. Layer thicknesses were measured using X-ray reflectivity with a four-cycle thin-film diffractometer (PANalytical X’Pert³ MRD, CuKα₁). Topography and PFM experiments were performed on a Bruker Multimode 8 atomic force microscope using Pt-coated Si tips (MikroMasch, k = 5.4 N m⁻¹).

The X-ray diffraction phase analysis of the sintered powders was performed using a diffractometer (Panalytical X’pert³ MRD) with Cu Kα radiation (λ = 1.54056A°) produced at 40 kV and 30 mA to scan the diffraction angles (2θ) between 10° and 80° with a step size of 0.04° 2θ per second. Indexing of the phases was done using ICDD Card ‘21–1187ʹ for strontium phosphate silicate. The FT-IR analysis of powders was performed in transmission mode using an FT-IR spectrophotometer (Thermo Nicolet, Avatar 330, USA) in the spectral range from 4000 to 400 cm⁻¹ by the KBr method (0.01%). The structural features of the powders were characterized and visualized using a high-resolution FE-SEM (Zeiss GeminiSEM 300) via sputtering of powders over the conductive surface.

Pentacene powder (purity of 99.9%) was purchased from a commercial supplier (Alfa Aesar). The pentacene single crystal was grown onto SiO₂/Si substrate by the microspacing in‐air sublimation. The growth temperature and time were 230 °C for 10 min. First, the graphene was mechanically exfoliated from natural crystals to the SiO₂/Si wafer by the adhesive tape. Raman spectroscopy combined with optical microscope characterizations point to a defect‐free single‐layer sample. Then two Au patches with a thickness of 180 nm were mechanically transferred onto graphene sheet with a probe tip under the optical microscope, as the source/drain contact electrodes, to form a graphene FET. Finally, pentacene single crystals were overlapped onto the prefabricated graphene channel by dry transfer process.
The cross‐POM images were obtained by the Zeiss Imager A2m fluorescence microscopy. AFM measurements were performed using a Bruker Icon AFM operating at room temperature and ambient conditions. Raman and PL measurements were performed using a 532 nm excitation laser, ×100 objective lens with about 1 µm diameter spot size. Optical absorption spectrum was measured using a Craic 20/30 PV microspectroscopy. XRD of the crystal were performed by Panalytical X'pert3 MRD with a Cu‐Kα anode operating at 40 kV and 40 mA.

High resolution X-ray diffractometer (XRD) patterns were acquired on a SmartLab3 KW diffractometer. ZEISS G300 emission scanning electron microscope was performed for SEM images. Ultraviolet-2600 spectrophotometer recorded the ultraviolet–visible absorption spectrum. AFM was measured by Dimensional Icon atomic force microscope. The impedance analyzer (CHI 660E) was used to characterize the electrochemical impedance spectroscopy (EIS) under dark conditions. 532 nm laser diode is employed as the light source of photodetector, and the incident irradiation power is surveyed by power meter (PM400, thorlabs). The noise measurement system (DA platform, NC 300A) records the noise power spectrum from 1 Hz to 100 kHz. For SCLC measurement, the dark current–voltage (I-V) curves were measured on a Keithley 4200-SCS semiconductor parameter analyzer. Photoelectric features of the 2DRP film photodetectors were recorded on a Keithley 4200-SCS semiconductor parameters analyzer at room temperature in air. The GIWAXS measurements were performed of Xeuss 2.0 using X-ray with a wavelength of 1.54189. The polar diagram was characterized by PANalytical X'Pert³ MRD. The external quantum efficiency (EQE) was tested employing an EQE system (Enlitech QE-R3011) equipped with a xenon lamp.

Cross-polarized optical microscopy images were obtained by a Zeiss Imager A2m fluorescence-microscope from Carl Zeiss ZESISS, Oberkochen, Germany. Atomic force microscopy (AFM) measurements were performed using a Bruke Icon atomic force microscope from Bruker, Washington, America operating at room temperature and under ambient conditions. X-ray diffraction (XRD) of the crystals was performed with a Panalytical X’pert3 MRD from Malvern Panaco, UK with a Cu Kα anode operating at 40 kV and 40 mA. Unless otherwise stated, all electrical measurements were carried out with a Keithley 4200 from Tektronix, Beaverton, Oregon, America. Parameter Analyzer at room temperature and under ambient conditions. Low-temperature photoluminescence spectra were acquired using a Horiba Jobin Yvon LabRam HR 800 spectrometer from HORIBA Jobin Yvon, Paris, France with a CCD-1024 × 256-FIVS-3S9.