TEM imaging of the samples was performed with a FEI Titan S/TEM. The images were obtained in TEM mode at 300 kV. Topographic images of the hafnium oxide films were obtained by a MFP-3D Origin AFM (Asylum Research) using the AC mode imaging in air.
Mfp 3d origin afm
Manufactured by Oxford Instruments
The MFP-3D Origin AFM is a high-performance atomic force microscope (AFM) designed for advanced surface analysis and characterization. The instrument utilizes the principles of atomic force microscopy to provide nanometer-scale imaging and measurement capabilities across a wide range of sample types and applications.
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Lab products found in correlation
3 protocols using mfp 3d origin afm
1
Characterizing Hafnium Oxide Films
2
Nanomechanical Properties of Spin-Cast PSx(NH3+Cl-) Films
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A spin-cast film (300-nm thick) of PSx(NH3+Cl−) was prepared, and a topographical image was obtained in a 10 × 10 µm2 area using a MFP-3D Origin AFM (Asylum Research, Oxford Instruments) under a N2 atmosphere (RH < 5%). Force curves obtained by indentation-retraction cycles were measured 10 × 10 (100) times in the image at a lateral scanning speed of nm s−1. The cantilever was OMCL-AC240TS-R3 (Olympus; Al-coated silicon, tip radius: 7 nm, force constant: 2 N m−1, Frequency: 70 kHz). The spring constant was calibrated in the measurement for a mica surface. By analyzing the retraction process of the cantilever with the JKR model, the elastic modulus was determined.
3
AFM Analysis of Wafer Roughness and Surface Potential
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Roughness and surface
potential measurements were performed using an Asylum Research MFP-3D
Origin AFM. Roughness measurements were done by scanning three random
positions on each piece of the diced wafer to obtain height, amplitude,
phase, and z-sensor data in air at room temperature by tapping mode.
Images of 2 μm × 2 μm were obtained at a scanning
frequency of 1 Hz using Si probes (f = 150 kHz, k = 8 N/m) from Asylum Research. The rms roughness was obtained
from the images using Igor Pro (version 6.2.2.2).
Surface potential
measurements were performed using the KPFM mode in air at room temperature
with Ti/Ir (5/20)-coated Si probes from Asylum Research (f = 285 kHz, k = 42 N/m). Images of 500 nm ×
500 nm were obtained with a scanning frequency of 1 Hz at three random
positions on each piece of the wafer along the gradient. The samples
were grounded by soldering a copper wire to the wafer surface with
In solder to minimize surface potential drift during the scans, which
was found to be a source of large standard deviations in our previous
work.45 (link) The rms surface potential values
were obtained from the images using Igor Pro (version 6.2.2.2).
potential measurements were performed using an Asylum Research MFP-3D
Origin AFM. Roughness measurements were done by scanning three random
positions on each piece of the diced wafer to obtain height, amplitude,
phase, and z-sensor data in air at room temperature by tapping mode.
Images of 2 μm × 2 μm were obtained at a scanning
frequency of 1 Hz using Si probes (f = 150 kHz, k = 8 N/m) from Asylum Research. The rms roughness was obtained
from the images using Igor Pro (version 6.2.2.2).
Surface potential
measurements were performed using the KPFM mode in air at room temperature
with Ti/Ir (5/20)-coated Si probes from Asylum Research (f = 285 kHz, k = 42 N/m). Images of 500 nm ×
500 nm were obtained with a scanning frequency of 1 Hz at three random
positions on each piece of the wafer along the gradient. The samples
were grounded by soldering a copper wire to the wafer surface with
In solder to minimize surface potential drift during the scans, which
was found to be a source of large standard deviations in our previous
work.45 (link) The rms surface potential values
were obtained from the images using Igor Pro (version 6.2.2.2).
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