The growth of 4-inch wafer-scale MoS2 MLs was achieved using high-purity gas precursors, Mo(CO)6 (99.9%; Sigma-Aldrich) and (C2H5)2S (98%; Sigma-Aldrich). Four-inch quartz and SiO2/p+-Si wafers were placed in the center of a 6-inch hot-walled quartz tube furnace. Before the MOCVD process, the furnace was purged for 1 hour to eliminate residual contaminants, and the temperature was ramped up to 535°C for 30 min. The growth proceeded for 26 hours with partial pressure of precursors of 4.2 × 10−5 torr for Mo(CO)6 and 10−2 torr for (C2H5)2S. The base pressure of the reactor was ~7 torr under the carrier gas flow of 150 standard cubic centimeters per minute (sccm) for Ar (99.9999%) and 1 sccm for H2 (99.9999%).
C2h5 2s
Manufactured by Merck Group
Diethyl sulfide (C2H5)2S is an organic compound with the chemical formula (C2H5)2S. It is a colorless, volatile liquid with a characteristic unpleasant odor. Diethyl sulfide is primarily used as a chemical reagent and in the synthesis of other organic compounds.
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3 protocols using c2h5 2s
1
Large-Scale MoS2 Monolayer CVD Growth
2
Monolayer MoS2 Growth via MOCVD
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Monolayer MoS2 films were grown under low pressure by metal-organic chemical vapor deposition (MOCVD)48 (link). Molybdenum hexacarbonyl (Mo(CO)6, Sigma Aldrich) and diethyl sulfide ((C2H5)2S, Sigma Aldrich) which were selected as precursors of Mo and S, respectively, were supplied in the gas phase into a one-inch quartz tube furnace using a bubbler system with Ar as the carrier gas. The MoS2 film was synthesized on a 300 nm-thick SiO2 layer on a Si wafer with a flow rate of 100 sccm for Ar, 0.1 sccm for Molybdenum hexacarbonyl, and 1.0 sccm for diethyl sulfide at a growth temperature of less than 350 °C. The growth time was about 20 h. After growth, the furnace temperature was ramped down to room temperature. The quality of the monolayer MoS2 films was characterized by Raman spectroscopy and photoluminescence (Supplementary Fig. 1c, d ).
3
Scalable MOCVD Synthesis of MoS2 Thin Films
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Large-area MoS2 was synthesized in an
MOCVD growth system
under low-pressure conditions [Figure 1 a]. The system consists of a quartz tube with an inner
diameter of 22 mm (outer diameter = 25 mm) inside a single zone Lindberg/Blue
M furnace. The precursors used for MoS2 growth are molybdenum
hexacarbonyl, Mo(CO)6 (Sigma-Aldrich, CAS number 13939-06-05,
99.9%), and diethyl sulfide, (C2H5)2S (Sigma-Aldrich, CAS number 352-93-2, 98%). The target substrate
used in this work was 285 nm SiO2 grown on highly doped
double-side-polished p-type Si. At the start of the growth process,
the target substrate (measuring 10 cm × 1.7 cm) was placed approximately
10 cm into the furnace and the system was pumped down to base pressure
(∼1.5 mTorr) following which three subsequent purge cycles
using ultrahigh purity Ar at 100 sccm were performed. Afterward, Ar
flow was cut off and H2 flow was introduced at 5 sccm as
the carrier gas for the rest of the growth. Background pressure of
the system was held at 5 mTorr. Mo(CO)6 and (C2H5)2S precursors were kept in bubblers in APs
at 45 °C and at room temperature, respectively, and the flow
rates were controlled via needle valves. The growth was conducted
at 850 °C for a duration of 1 min after which the precursor gas
flow was cut off and the furnace was allowed to cool down, with only
the carrier gas flowing.
MOCVD growth system
under low-pressure conditions [
diameter of 22 mm (outer diameter = 25 mm) inside a single zone Lindberg/Blue
M furnace. The precursors used for MoS2 growth are molybdenum
hexacarbonyl, Mo(CO)6 (Sigma-Aldrich, CAS number 13939-06-05,
99.9%), and diethyl sulfide, (C2H5)2S (Sigma-Aldrich, CAS number 352-93-2, 98%). The target substrate
used in this work was 285 nm SiO2 grown on highly doped
double-side-polished p-type Si. At the start of the growth process,
the target substrate (measuring 10 cm × 1.7 cm) was placed approximately
10 cm into the furnace and the system was pumped down to base pressure
(∼1.5 mTorr) following which three subsequent purge cycles
using ultrahigh purity Ar at 100 sccm were performed. Afterward, Ar
flow was cut off and H2 flow was introduced at 5 sccm as
the carrier gas for the rest of the growth. Background pressure of
the system was held at 5 mTorr. Mo(CO)6 and (C2H5)2S precursors were kept in bubblers in APs
at 45 °C and at room temperature, respectively, and the flow
rates were controlled via needle valves. The growth was conducted
at 850 °C for a duration of 1 min after which the precursor gas
flow was cut off and the furnace was allowed to cool down, with only
the carrier gas flowing.
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