4155c semiconductor parameter analyzer

Pulsed resistance experiments were conducted using a Cascade probe station, measuring 1T1R (one transistor per resistance element) PCM arrays with approximately 40 nm Bottom Electrode (BE) contact diameter. Details on device fabrication and characterization of these arrays can be found in^{42 –44} . Wafers of arrays, provided by IBM, were contacted by a custom probe card and connected to a Keithley 700B Switch Matrix, enabling access to 100 unique devices. Voltage pulses were produced by an Agilent 81110 A Pulse Generator. ‘RESET’ pulses applied 3 V to bitline and wordline with a 5 ns rise time, 60 ns width, and 5 ns fall time. ‘Partial SET’ pulses applied 3 V to the bitline and a variable voltage to the wordline with 500 ns rise time, 2000ns width, and 500 ns tail. Cell resistances were measured with an Agilent 4155 C Semiconductor Parameter Analyzer, applying 3 V to the wordline and 0.1 V to the bitline. All equipment was controlled via custom Python software utilizing PyVisa and wxPython (available at http://www.github.com/jesseengel/PythonProbestation).

X-ray photoelectron spectroscopy (XPS) measurement are performed by VGS ESCALab 250 system with Al Kalpha X-ray source. TOF–SIMS depth profile is measured by IonTOF-SIMS-5. Current density–voltage-luminance (J-V-L) characteristics are measured by a Minolta CS-100 chromameter and an Agilent 4155C semiconductor parameter analyzer connected with a silicon photodiode. EL and PL spectra are measured by an Ocean Optics QE65000 spectrometer with an excitation source consisting of a Newport 67,005 200 W HgXe arc lamp and monochromator. Device luminance vs. time driven with constant currents are recorded using a M6000PLUS OLED lifetime test system. Surface topography measurements are performed using a Veeco Nanoscope tapping-mode atomic force microscope (AFM). Time-resolved photoluminescence (TRPL) is measured using an Edinburgh Instruments FL920 spectrometer connected to a time-correlated single photon counting unit (TCSPC) using a pulsed LED laser as an excitation source. C-V characteristics are measured using a Keithley 4200 semiconductor analyzer with a capacitance–voltage unit (4215-CVU). The capacitance is measured using an AC voltage with 20 mV room-mean-square and 5 kHz frequency. The small AC voltage signal produces current that is integrated to calculate C using the relationship (Eq. (1)): $$C\equiv \frac{\mathrm{\Delta }Q}{\mathrm{\Delta }V}$$

To measure the current–voltage (I–V) characteristics we utilized an Agilent 4155 C semiconductor parameter analyzer. I-V measurements under illumination were performed using an LED light source with a wavelength of λ = 520 nm. The LED was powered with a Keithley 2636 A source measure unit (SMU). The light intensity was adjusted using neutral density (ND) filters (Thorlabs NDUVxxA/NE5xxB).
To perform SR measurements a monochromator (Acton SP-2150i) was used to selectively filter light from a 450 W OSRAM XBO Xenon discharge lamp. The light was modulated at a frequency of 173 Hz with a chopper wheel, and the OPD signal was amplified using a Femto DHPCA-100 amplifier. An SR830 lock-in amplifier was used to measure the output signal.
To characterize the bandwidth, we varied the frequency of a square-light signal and measured the transient current under illumination. The light was modulated using an Agilent 33,522 A function generator. As a light source, we used an Oxxius LBX520 laser. The signal was recorded using an Agilent DSO 6102 A oscilloscope.

OFETs were electrically characterized using an Agilent 4155C Semiconductor Parameter Analyzer. All measurements were performed in dark, at room temperature and in ambient air, except for the measurements under vacuum, which were performed in a vacuum probe station. The charge-carrier mobility was determined from the slope of the √I_D vs. V_GS plot using the following equation^{7 (link)}, $\mathrm{\mu }=\frac{2L}{W{C}_{\mathrm{i}}}{\left(\frac{\partial \sqrt{I_{\mathrm{D}}}}{\partial V_{\mathrm{GS}}}\right)}^2$ where L and W are the length and width of the transistor channel. The threshold voltage was evaluated by extrapolating the linear fit of √I_D vs V_GS to I_D = 0. Only devices with ideal or near-ideal current–voltage characteristics have been considered in the analysis, which was the majority of our devices.

The film thicknesses were evaluated through ellipsometry (Sopra GES-5E Ellipsometer, SEMILAB Japan K.K.). Film densities were measured using the X-ray reflectivity method (X’Pert PRO MRD, PANalytical). The surface morphologies were investigated through atomic force microscopy (AFM; NanoNavi, SII). Elemental compositions of the thin films were obtained from combinational Rutherford backscattering spectrometry, nuclear reaction analysis, and hydrogen forward scattering spectrometry on Pelletron 3SDH (National Electrostatics Corp.) at Toray Research Center, Inc., Japan, with estimated precisions of ±0.5 atom% for C and H, ±1 atom% for La and Zr, and ±4 atom% for O. High-resolution transmission electron microscopy was performed by the Kobelco Research Institute Inc. Impedance measurements of the Pt/LaZrO/Pt capacitor samples were performed using an SI 1260 Impedance/Gain-Phase Analyzer (Solartron Analytical). The current–voltage characteristics of these capacitor samples were measured using a 4155C Semiconductor Parameter Analyzer (Agilent).

Current and Voltage (I-V) measurements were conducted with an Agilent 4155C Semiconductor Parameter Analyzer and Semiprobe Probe Station under standard atmospheric and pressure conditions. Micromanipulator probes were suspended in the Galinstan droplets to act as the source and drain electrodes. The gate probe was then suspended in the dielectric. To avoid shorting the device, the micromanipulator probe was carefully lowered into the gate dielectric without touching the graphene surface.