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K2 direct electron detection camera

Manufactured by Ametek
Sourced in United States

The K2 direct electron detection camera is a high-performance imaging device designed for use in electron microscopy applications. It captures direct electron images without the need for scintillators or other conversion layers, enabling high-resolution and low-noise imaging.

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2 protocols using k2 direct electron detection camera

1

Cryo-EM Sample Preparation and Data Acquisition

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The whole sample preparation and data acquisition were done at CEITEC MU. The 3.5 μl of SDBC sample (5 mg/ml) was applied to freshly glow-discharged transmission electron microscopy grids (Protochips, Cu, 300 mesh, R1.2/1.3) and vitrified into liquid ethane using ThermoScientific Vitrobot Mark IV (4 °C, 100% rel. humidity, 30 s waiting time, 3 s blotting time). The grids were subsequently mounted into the Autogrid cartridges and loaded to a FEI Talos Arctica (ThermoScientific) transmission electron microscope for screening prior to data acquisition. The SDBC data were collected using a FEI Titan Krios operated at 300 kV using the SerialEM software (https://bio3d.colorado.edu/SerialEM/; 28 (link)). The microscope was aligned for fringe-free imaging. The data were collected on the K2 direct electron detection camera (Gatan) positioned behind the Gatan Imaging Filter at the calibrated pixel size of 0.818 Å/px (nominal magnification of 1,650,00×). The energy selecting slit was set to 10 eV. The data from a 5.0 s exposure were saved into 40 frames containing overall dose of 55 e/Å2. The dataset comprised 9594 movies in total. The image defocus was set to to vary between −0.5 μm and −1 μm.
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2

Characterizing Aluminum Impurity Deposits

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A Sigma 300 VP
(Zeiss, Germany) scanning electron microscope equipped with an Oxford
SDD 30 EDS detector (Oxford Instruments, United Kingdom) was used.
Transmission electron microscopy (TEM) lamellae were prepared by an
FEI Nova 200 NanoLab (FEI, USA), a dual beam focused ion beam (FIB)/SEM
microscope, and mounted at an Omniprobe Cu grid. Measurements were
performed with an FEI Titan3 (link) G2 60-300
(FEI, USA) equipped with a CS-probe corrector, a Super-X EDS detector
(FEI, NL), and a Gatan Image Filter Quantum ERS (Gatan, USA) as well
as a K2 direct electron detection camera (Gatan, USA). All TEM measurements
were carried out at 300 kV acceleration voltage and in monochromated
STEM mode. Elemental maps and line scans were obtained using GMS 3
(Gatan, USA). The HAADF SE image of the impurity deposit and corresponding
TEM-EDS maps (Figure S6b–h) were
acquired and processed using Velox Version 2 (Thermo Fischer Scientific,
USA). As for SNMS and XPS, it was necessary also for TEM to use thin
film samples because the surface of mechanically polished Al is too
rough.
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